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公开(公告)号：US06753741B1
公开(公告)日：2004-06-22
申请号：US09985522
申请日：2001-11-05
申请人： Alp T. Findikoglu , Sangkoo F. Hahn , Quanxi Jia
发明人： Alp T. Findikoglu , Sangkoo F. Hahn , Quanxi Jia
IPC分类号： H01P300
CPC分类号： H01P3/003
摘要： Dynamic time expansion or compression of a small-amplitude input signal generated with an initial scale is performed using a nonlinear waveguide. A nonlinear waveguide having a variable refractive index is connected to a bias voltage source having a bias signal amplitude that is large relative to the input signal to vary the reflective index and concomitant speed of propagation of the nonlinear waveguide and an electrical circuit for applying the small-amplitude signal and the large amplitude bias signal simultaneously to the nonlinear waveguide. The large amplitude bias signal with the input signal alters the speed of propagation of the small-amplitude signal with time in the nonlinear waveguide to expand or contract the initial time scale of the small-amplitude input signal.
摘要翻译： 使用非线性波导进行用初始刻度产生的小振幅输入信号的动态时间展开或压缩。 具有可变折射率的非线性波导连接到具有相对于输入信号大的偏置信号幅度的偏置电压源，以改变非线性波导的反射指数和伴随传播速度，以及用于施加小的 - 幅度信号和大振幅偏置信号同时到非线性波导。 具有输入信号的大振幅偏置信号在非线性波导中随时间改变小振幅信号的传播速度，以扩大或缩小小振幅输入信号的初始时间尺度。
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公开(公告)号：US06312819B1
公开(公告)日：2001-11-06
申请号：US09320398
申请日：1999-05-26
申请人： Quanxi Jia , Paul N. Arendt
发明人： Quanxi Jia , Paul N. Arendt
IPC分类号： B32B900
CPC分类号： H01L28/56 , H01L28/75 , Y10S117/902 , Y10S117/905 , Y10T428/26
摘要： A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.
摘要翻译： 提供一种薄膜结构，其包括在其表面上具有二氧化硅层的硅衬底和通过离子束辅助沉积沉积在二氧化硅层上的立方氧化物材料层，所述立方氧化物材料层 特征为双轴取向。 优选地，立方氧化物材料是氧化钇稳定的氧化锆。 另外的双轴取向氧化钌或氧化镧镧的薄层沉积在氧化钇稳定的氧化锆层上。 在氧化钇稳定的氧化锆层和氧化镧镧氧化钴层之间采用氧化铈中间层。 此外，一层钡锶钛氧化物可以在双轴取向的氧化钌层或氧化镧锶上。 此外，提供了一种形成这种薄膜结构的方法，包括在二氧化硅/硅衬底的二氧化硅表面上的双轴取向立方氧化物材料层的低温沉积。
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公开(公告)号：US5585776A
公开(公告)日：1996-12-17
申请号：US149445
申请日：1993-11-09
申请人： Wayne Anderson , Franklyn M. Collins , Quanxi Jia , Kaili Jiao , Hoong J. Lee
发明人： Wayne Anderson , Franklyn M. Collins , Quanxi Jia , Kaili Jiao , Hoong J. Lee
CPC分类号： H01C1/034 , H01C7/006 , Y10T29/49099
摘要： In a first embodiment of the invention a layer of ruthenium oxide is reactively deposited onto a substrate, then annealed for TCR adjustment and for stabilization. In a second, bi-layer embodiment of the invention, a layer of tantalum nitride is first reactively deposited onto a substrate, then annealed for stabilization. After a ruthenium oxide layer is reactively deposited onto the annealed tantalum nitride layer, the structure is annealed until a near-zero effective TCR for the bi-layer resistor is achieved. The ruthenium oxide capping layer serves as a barrier against chemical attack.
摘要翻译： 在本发明的第一实施方案中，将一层氧化钌反应地沉积在基材上，然后退火以进行TCR调整和稳定化。 在本发明的第二个双层实施例中，首先将一层氮化钽反应地沉积到衬底上，然后退火以进行稳定化。 在氧化钌层被反应地沉积到退火的氮化钽层上之后，将该结构退火直到达到双层电阻器的接近零的有效TCR。 氧化钌覆盖层用作防止化学侵蚀的屏障。
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公开(公告)号：US20130217840A1
公开(公告)日：2013-08-22
申请号：US12150627
申请日：2008-04-29
申请人： Thomas M. McCleskey , Anthony K. Burrell , Quanxi Jia , Yuan Lin
发明人： Thomas M. McCleskey , Anthony K. Burrell , Quanxi Jia , Yuan Lin
IPC分类号： C08G73/02
CPC分类号： C08G73/0206 , C08K3/10
摘要： A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.
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45.发明申请Control of Strain Through Thickness in Epitaxial Films Via Vertical Nanocomposite Heteroepitaxy 审中-公开通过垂直纳米复合材料异质外延控制外延薄膜中的厚度公开(公告)号：US20120058323A1
公开(公告)日：2012-03-08
申请号：US12671891
申请日：2008-08-01
申请人： Judith L. Driscoll , Quanxi Jia , Patrick Zerrer
发明人： Judith L. Driscoll , Quanxi Jia , Patrick Zerrer
IPC分类号： B32B15/00
摘要： A two-dimensional vertical heteroepitaxial strain controlled composite is grown. The strain-controlling phase can be benign in all other respects so that the functional properties of the parent phase are unchanged, improved/enhanced, and/or manipulated. The new composite is advantageous because there is no need for expensive specialized crystals and because there are no thickness limitations.
摘要翻译： 生长二维垂直异质外延应变控制复合材料。 应变控制阶段在所有其他方面可以是良性的，使得母体相的功能特性不变，改善/增强和/或操纵。 新的复合材料是有利的，因为不需要昂贵的专用晶体，因为没有厚度限制。
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公开(公告)号：US08034448B2
公开(公告)日：2011-10-11
申请号：US12229046
申请日：2008-08-19
IPC分类号： D02G3/00
CPC分类号： C08G77/26 , C08G77/16 , Y10S977/742 , Y10S977/748 , Y10S977/847 , Y10T428/2918 , Y10T428/2924
摘要： Fibrous composite comprising a plurality of carbon nanotubes; and a silica-containing moiety having one of the structures: (SiO)3Si—(CH2)n—NR1R2) or (SiO)3Si—(CH2)n—NCO; where n is from 1 to 6, and R1 and R2 are each independently H, CH3, or C2H5.
摘要翻译： 包含多个碳纳米管的纤维复合材料; 和（SiO）3 Si（（CH 2）n -NR 11 R 2）或（SiO）3 Si-（CH 2）n -NCO的结构之一的含二氧化硅的部分; 其中n为1至6，并且R 1和R 2各自独立地为H，CH 3或C 2 H 5。
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公开(公告)号：US20110189504A1
公开(公告)日：2011-08-04
申请号：US12697877
申请日：2010-02-01
CPC分类号： C23C18/1204 , C23C18/127 , C23C18/1279
摘要： A coating solution including a polymer and a metal selected from scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, boron, aluminum and silicon can be deposited on a substrate and then exposed at elevated temperature to a reducing atmosphere including a gaseous carbon source. Solvent evaporates and the polymer decomposes and a metal carbide film forms on the substrate. Metal carbide films of titanium carbide, vanadium carbide, niobium carbide, tantalum carbide, tungsten carbide, silicon carbide, and several mixed carbides were prepared. X-Ray diffraction patterns of metal carbide films provide evidence of a highly ordered structure and excellent alignment with the substrate. A composite film of niobium carbide and carbon nanotubes was also prepared.
摘要翻译： 包括聚合物和选自钪，钇，钛，锆，铪，钒，铌，钽，铬，钼，钨，硼，铝和硅的金属的涂层溶液可以沉积在基材上，然后在高温下 包括气态碳源的还原气氛。 溶剂蒸发并且聚合物分解，并且在基材上形成金属碳化物膜。 制备碳化钛，碳化钒，碳化铌，碳化钽，碳化钨，碳化硅和几种混合碳化物的金属碳化物膜。 金属碳化物膜的X射线衍射图形提供了高度有序结构和与衬底的优异对准的证据。 还制备了碳化铌和碳纳米管的复合膜。
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公开(公告)号：US07959889B2
公开(公告)日：2011-06-14
申请号：US12221886
申请日：2008-08-06
IPC分类号： D01F9/12
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/15 , Y10T428/24149 , Y10T428/2918
摘要： A carbon microtube comprising a hollow, substantially tubular structure having a porous wall, wherein the microtube has a diameter of from about 10 μm to about 150 μm, and a density of less than 20 mg/cm3. Also described is a carbon microtube, having a diameter of at least 10 μm and comprising a hollow, substantially tubular structure having a porous wall, wherein the porous wall comprises a plurality of voids, said voids substantially parallel to the length of the microtube, and defined by an inner surface, an outer surface, and a shared surface separating two adjacent voids.
摘要翻译： 一种碳微管，包括具有多孔壁的中空的基本管状结构，其中所述微管的直径为约10μm至约150μm，密度小于20mg / cm 3。 还描述了直径为至少10μm并且包括具有多孔壁的中空的基本管状结构的碳微管，其中多孔壁包括多个空隙，所述空隙基本上平行于微管的长度，并且 由内表面，外表面和分开两个相邻空隙的共享表面限定。
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公开(公告)号：US07851412B2
公开(公告)日：2010-12-14
申请号：US11707611
申请日：2007-02-15
申请人： Paul N. Arendt , Liliana Stan , Quanxi Jia , Raymond F. DePaula , Igor O. Usov
发明人： Paul N. Arendt , Liliana Stan , Quanxi Jia , Raymond F. DePaula , Igor O. Usov
CPC分类号： C30B29/16 , C30B23/02 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02554
摘要： The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
摘要翻译： 本发明涉及一种基于在立方（001）MgO封端表面上的外延（111）取向的稀土 - ⅣB族氧化物和可修正的离子束辅助沉积（“IBAD”）技术的薄膜结构 被六角晶体结构的半导体覆盖。 结合某些模板材料的IBAD氧化镁（“MgO”）技术用于制造所需的薄膜阵列。 类似地，具有适当模板层的IBAD MgO可用于具有立方晶体结构的半导体。
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公开(公告)号：US07839499B2
公开(公告)日：2010-11-23
申请号：US12069971
申请日：2008-02-13
申请人： Yixiang Duan , Quanxi Jia , Wenqing Cao
发明人： Yixiang Duan , Quanxi Jia , Wenqing Cao
IPC分类号： G01J3/30
CPC分类号： G01N21/67 , G01J3/30 , G01N2201/0221
摘要： A hydrogen sensor for detecting/quantitating hydrogen and hydrogen isotopes includes a sampling line and a microplasma generator that excites hydrogen from a gas sample and produces light emission from excited hydrogen. A power supply provides power to the microplasma generator, and a spectrometer generates an emission spectrum from the light emission. A programmable computer is adapted for determining whether or not the gas sample includes hydrogen, and for quantitating the amount of hydrogen and/or hydrogen isotopes are present in the gas sample.
摘要翻译： 用于检测/定量氢和氢同位素的氢传感器包括从气体样品中激发氢气并从激发的氢气产生光发射的采样管线和微质发生器。 电源为微量发生器提供电力，光谱仪从发光中产生发射光谱。 可编程计算机适于确定气体样品是否包括氢，并且用于定量气体样品中存在氢和/或氢同位素的量。
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