公开(公告)号：US20100009176A1

公开(公告)日：2010-01-14

申请号：US11094742

申请日：2005-03-29

申请人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Terry G. Holesinger ,  Quanxi Jia

发明人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Terry G. Holesinger ,  Quanxi Jia

IPC分类号： B32B15/04

CPC分类号： H01L39/2461 ,  C23C14/081 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10T428/265

摘要： An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

摘要翻译： 包括衬底，在衬底表面上的惰性氧化物材料层（通常惰性氧化物材料层具有光滑表面，即小于约2nm的RMS粗糙度）的物品，非晶态层 氧化物或氧氮化物材料在惰性氧化物材料层上，在非晶形氧化物材料层上具有岩盐状结构的定向立方氧化物材料层与另外的层一起提供，例如至少一层缓冲材料层 定向的立方氧化物材料层或YBCO的HTS顶层直接在取向的立方氧化物材料层上。 在这种制品中至少一层缓冲材料上具有HTS顶层的YBCO，已经证明了Jc为1.4×10 6 A / cm 2，并且在1cm宽的样品上已经证明了具有210安培的投影Ic。

公开(公告)号：US06921741B2

公开(公告)日：2005-07-26

申请号：US10359808

申请日：2003-02-07

申请人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Quanxi Jia

发明人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Quanxi Jia

IPC分类号： C23C14/08 ,  C30B23/02 ,  H01L39/24 ,  B32B19/00 ,  B32B9/00 ,  H01L39/00

CPC分类号： H01L39/2461 ,  C23C14/081 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10T428/265

摘要： A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer.Jc′s of 2.3×106 A/cm2 have been demonstrated with projected Ic′s of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

摘要翻译： 一种复合衬底结构，包括衬底，结晶金属氧化物层或晶体金属氧氮化物材料层，在结晶金属氧化物或结晶金属氧氮化物材料上具有岩盐状结构的定向立方氧化物材料层 层与诸如一层或多层缓冲材料的附加层一起设置在定向立方氧化物材料层上。 已经证明具有2.3×10 6 /厘米2以上的J C 2以及/ 对于包括柔性多晶金属基底的超导物品，在柔性多晶金属基底的表面上的惰性氧化物材料层，在该层上的结晶金属氧化物或结晶金属氮氧化物材料的层，横跨样品1cm宽的320安培 惰性氧化物材料，在结晶金属氧化物或结晶金属氧氮化物材料层上具有岩盐状结构的定向立方氧化物材料层，定向立方氧化物材料层上的缓冲材料层，以及 在缓冲材料层上的高温超导材料的顶层。

公开(公告)号：US06756139B2

公开(公告)日：2004-06-29

申请号：US10113476

申请日：2002-03-28

申请人： Quanxi Jia ,  Stephen R. Foltyn ,  Paul N. Arendt ,  James R. Groves

发明人： Quanxi Jia ,  Stephen R. Foltyn ,  Paul N. Arendt ,  James R. Groves

IPC分类号： B32B1900

CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S428/93

摘要： An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO3 buffer material in such an article, Jc′s of up to 1.3×106 A/cm2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

公开(公告)号：US07851412B2

公开(公告)日：2010-12-14

申请号：US11707611

申请日：2007-02-15

申请人： Paul N. Arendt ,  Liliana Stan ,  Quanxi Jia ,  Raymond F. DePaula ,  Igor O. Usov

发明人： Paul N. Arendt ,  Liliana Stan ,  Quanxi Jia ,  Raymond F. DePaula ,  Igor O. Usov

IPC分类号： H01L39/24 ,  H01B1/00 ,  H01B1/02 ,  B32B9/00

CPC分类号： C30B29/16 ,  C30B23/02 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554

摘要： The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

摘要翻译： 本发明涉及一种基于在立方（001）MgO封端表面上的外延（111）取向的稀土 - ⅣB族氧化物和可修正的离子束辅助沉积（“IBAD”）技术的薄膜结构 被六角晶体结构的半导体覆盖。 结合某些模板材料的IBAD氧化镁（“MgO”）技术用于制造所需的薄膜阵列。 类似地，具有适当模板层的IBAD MgO可用于具有立方晶体结构的半导体。

公开(公告)号：US07608335B2

公开(公告)日：2009-10-27

申请号：US11001461

申请日：2004-11-30

申请人： Alp T. Findikoglu ,  Quanxi Jia ,  Paul N. Arendt ,  Vladimir Matias ,  Woong Choi

发明人： Alp T. Findikoglu ,  Quanxi Jia ,  Paul N. Arendt ,  Vladimir Matias ,  Woong Choi

IPC分类号： B32B9/00 ,  B32B9/04 ,  B32B13/04

CPC分类号： C30B29/06 ,  C30B25/18 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02658

摘要： A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

摘要翻译： 一种模板制品，包括基底，其包括：（i）选自多晶基底和非晶基底的基材，和（ii）在所述基材表面上的至少一层不同材料; 以及在所述基底基板上的缓冲材料层，所述缓冲材料层的特征在于：（a）与所述基底基板的化学反应性低，（b）在低真空条件下在至少约800℃的温度下的稳定性;以及 （c）适于随后沉积半导体材料的晶格结构; 与包括基底基板的半导体产品一起提供，所述半导体产品包括：（i）选自多晶基底和非晶基底的基材，和（ii）在基底表面上的至少一层不同材料 材料; 以及在所述基底基板上的缓冲材料层，所述缓冲材料层的特征在于：（a）与所述基底基板的化学反应性低，（b）在低真空条件下在至少约800℃的温度下的稳定性，以及 （c）适于随后沉积半导体材料的晶格结构结构，以及半导体材料的顶层在缓冲材料层上。

公开(公告)号：US06716545B1

公开(公告)日：2004-04-06

申请号：US10113475

申请日：2002-03-28

申请人： Terry G. Holesinger ,  Stephen R. Foltyn ,  Paul N. Arendt ,  James R. Groves ,  Quanxi Jia ,  Alicia Ayala

发明人： Terry G. Holesinger ,  Stephen R. Foltyn ,  Paul N. Arendt ,  James R. Groves ,  Quanxi Jia ,  Alicia Ayala

IPC分类号： B32B1900

CPC分类号： C23C14/087 ,  C04B35/053 ,  C04B35/47 ,  C04B2235/3215 ,  C04B2235/3281 ,  C04B2235/81 ,  C23C14/3414 ,  H01L39/2461

摘要： Copper or excess copper is added to one or more layers of a superconducting composite structure to reduce migration of copper form a copper based superconducting layer.

摘要翻译： 铜或多余的铜被添加到一层或多层超导复合结构中以减少铜形成铜基超导层的迁移。

公开(公告)号：US20100093547A1

公开(公告)日：2010-04-15

申请号：US11591269

申请日：2006-10-31

申请人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt ,  Haiyan Wang

发明人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt ,  Haiyan Wang

IPC分类号： H01L39/02

CPC分类号： H01L39/2461 ,  Y10S428/93

摘要： A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

公开(公告)号：US07258927B2

公开(公告)日：2007-08-21

申请号：US11021800

申请日：2004-12-23

申请人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt

发明人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt

IPC分类号： B32B15/00

CPC分类号： H01L39/2461

摘要： Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

摘要翻译： 提供了包括其上具有取向材料层的基底基材和在取向材料层上的氧化铪层的制品。 氧化铪层还可以包括二氧化铈，氧化钇，氧化镧，氧化钪，氧化钙和氧化镁等次级氧化物。 这样的制品还可以包括氧化铪层或二氧化铪层上的高温超导氧化物如YBCO的薄膜。

公开(公告)号：US06743292B2

公开(公告)日：2004-06-01

申请号：US09955715

申请日：2001-09-18

申请人： Quanxi Jia ,  Paul N. Arendt

发明人： Quanxi Jia ,  Paul N. Arendt

IPC分类号： C30B2900

CPC分类号： H01L28/56 ,  H01L28/75 ,  Y10S117/902 ,  Y10S117/905 ,  Y10T428/26

摘要： A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide.

摘要翻译： 提供一种薄膜结构，其包括在其表面上具有二氧化硅层的硅衬底和通过离子束辅助沉积沉积在二氧化硅层上的立方氧化物材料层，所述立方氧化物材料层 特征为双轴取向。 优选地，立方氧化物材料是氧化钇稳定的氧化锆。 另外的双轴取向氧化钌或氧化镧镧的薄层沉积在氧化钇稳定的氧化锆层上。 在氧化钇稳定的氧化锆层和氧化镧镧氧化钴层之间采用氧化铈中间层。 此外，一层钡锶钛氧化物可以在双轴取向的氧化钌层或氧化镧锶上。

公开(公告)号：US20080197327A1

公开(公告)日：2008-08-21

申请号：US11707611

申请日：2007-02-15

申请人： Paul N. Arendt ,  Liliana Stan ,  Quanxi Jia ,  Raymond F. DePaula ,  Igor O. Usov

发明人： Paul N. Arendt ,  Liliana Stan ,  Quanxi Jia ,  Raymond F. DePaula ,  Igor O. Usov

IPC分类号： H01B1/02

CPC分类号： C30B29/16 ,  C30B23/02 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554

摘要： The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

摘要翻译： 本发明涉及一种基于在立方（001）MgO封端表面上的外延（111）取向的稀土 - ⅣB族氧化物和可修正的离子束辅助沉积（“IBAD”）技术的薄膜结构 被六角晶体结构的半导体覆盖。 结合某些模板材料的IBAD氧化镁（“MgO”）技术用于制造所需的薄膜阵列。 类似地，具有适当模板层的IBAD MgO可用于具有立方晶体结构的半导体。