公开(公告)号：US07881025B2

公开(公告)日：2011-02-01

申请号：US11931219

申请日：2007-10-31

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/39 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3993 ,  H01F10/3272 ,  H01F41/306 ,  H01L43/08

摘要： The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and further comprises a work function control layer formed between the first nonmagnetic metal layer and the semiconductor layer and/or between the second nonmagnetic metal layer and the semiconductor layer. The semiconductor layer is an n-type semiconductor, and the work function control layer is made of a material having a work function smaller than that of said first nonmagnetic metal layer, and said second nonmagnetic metal layer. It is thus possible to obtain by far more improved advantages.

摘要翻译： 本发明提供一种包括间隔层的CPP-GMR装置。 间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层和第二非磁性金属层之间的半导体层，还包括功函数控制层 形成在第一非磁性金属层和半导体层之间和/或第二非磁性金属层与半导体层之间。 半导体层是n型半导体，功函数控制层由功函数小于所述第一非磁性金属层的功函数和所述第二非磁性金属层构成。 因此可以获得更多改进的优点。

公开(公告)号：US07826180B2

公开(公告)日：2010-11-02

申请号：US11768435

申请日：2007-06-26

申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Shinji Hara

发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Shinji Hara

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3967 ,  H01L43/10

摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn. MR change rate and heat resistance are thus much more improved than ever before.

摘要翻译： 本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠， 它们具有沿堆叠方向施加的感测电流，其中自由层起着使得磁化方向取决于外部磁场的作用，并且间隔层包括第一和第二非磁性金属层，每个非磁性金属层由非磁性 金属材料和介于第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化锌，氧化锡，氧化铟和氧化铟锡（ITO ），第一非磁性金属层由Cu制成，第二非磁性金属层基本上由Zn制成。 因此，MR变化率和耐热性比以前更加改善。

公开(公告)号：US20100097722A1

公开(公告)日：2010-04-22

申请号：US12255105

申请日：2008-10-21

申请人： Tsutomu Chou ,  Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Hironobu Matsuzawa

发明人： Tsutomu Chou ,  Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Hironobu Matsuzawa

IPC分类号： G11B5/48 ,  G11B5/33

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3254 ,  H01L43/10

摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.

摘要翻译： 在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有由至少一种选自以下的金属元素所赋予的掺杂剂： 的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。

公开(公告)号：US20080117554A1

公开(公告)日：2008-05-22

申请号：US11943171

申请日：2007-11-20

申请人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： G11B5/127

CPC分类号： G11B5/59683

摘要： The invention provides a giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them, wherein the free layer functions such that its magnetization direction changes depending on an external magnetic field, and the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between them, wherein the semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient, wherein the main ingredient zinc oxide contains at least one selected from among oxides containing a trivalent cation of Al2O3, Ga2O3, In2O3, and B2O3, and a tetravalent cation of TiO2. It is thus possible to make thicker the semiconductor oxide layer forming a part of the spacer layer while keeping the device's area resistivity low as desired, thereby offering the advantages: much higher MR performance with much less variable device's area resistivity, and much more improved film performance reliability.

摘要翻译： 本发明提供一种具有包括间隔层的CPP结构的巨磁阻效应器件，以及一个彼此层叠的所述间隔层彼此层叠的固定磁化层和自由层，其中自由层的功能是使其磁化方向 变化取决于外部磁场，并且间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层以及介于它们之间的半导体氧化物层，其中形成部分的半导体氧化物层 的间隔层包含氧化锌作为主要成分，其中主要成分氧化锌含有选自含有三价阳离子的氧化物中的至少一种，其中含有三价阳离子的Al 2 O 3， Ga 2 O 3，以及B 2 O 3，以及B 2 O 3， SUB> 3 <！ - SIPO - >和TiO 2的四价阳离子。 因此，可以使形成间隔层的一部分的半导体氧化物层变得更厚，同时保持器件的面积电阻率为期望的低，从而具有以下优点：MR性能更高，可变器件的面积电阻率更小得多，并且更多改进的膜 性能可靠性。

公开(公告)号：US20080062557A1

公开(公告)日：2008-03-13

申请号：US11698180

申请日：2007-01-26

申请人： Yoshihiro Tsuchiya ,  Kei Hirata ,  Tomohito Mizuno ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Kei Hirata ,  Tomohito Mizuno ,  Koji Shimazawa

IPC分类号： G11B5/52 ,  G11B5/127 ,  G11B5/56

CPC分类号： G11B5/59683 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·m2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.

摘要翻译： MR元件包括：具有响应于信号磁场而改变的磁化方向的自由层; 具有固定的磁化方向的钉扎层; 以及设置在这些层之间的间隔层。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及由含有氧化物半导体的材料制成并且设置在第一和第二非磁性金属层之间的半导体层。 MR元件的电阻面积为0.1〜0.3Omeg·m 2的范围，间隔层的导电率为133〜432S / cm。

公开(公告)号：US08599652B2

公开(公告)日：2013-12-03

申请号：US13182623

申请日：2011-07-14

申请人： Satoshi Tomikawa ,  Tomohito Mizuno

发明人： Satoshi Tomikawa ,  Tomohito Mizuno

IPC分类号： G11B11/00

CPC分类号： G11B5/7325 ,  G11B5/314 ,  G11B2005/0021

摘要： A thermally-assisted magnetic recording (TAMR) medium of the present invention includes: a magnetization direction arrangement layer on a substrate; and a magnetic recording layer on the magnetization direction arrangement layer, wherein the magnetization direction arrangement layer is made of at least one selected from a group consisting of Co, Zr, CoZr, CoTaZr, CoFeTaZrCr, CoNbZr, CoNiZr, FeCoZrBCu, NiFe, FeCo, FeAlN, (FeCo)N, FeAlSi, and FeTaC so that a spreading of the heating spot applied from the magnetic head for thermally-assisted recording to the film surface of the magnetic recording medium is suppressed, and that an SN is improved by arranging the magnetization direction of the perpendicularly written recording magnetization to become identical to a perpendicular direction, and realizing the higher recording density.

摘要翻译： 本发明的热辅助磁记录（TAMR）介质包括：基板上的磁化方向排列层; 和磁记录层，磁化方向布置层由选自Co，Zr，CoZr，CoTaZr，CoFeTaZrCr，CoNbZr，CoNiZr，FeCoZrBCu，NiFe，FeCo， FeAlN，（FeCo）N，FeAlSi和FeTaC，从而抑制从用于热辅助记录的磁头施加的加热点到磁记录介质的膜表面的扩散，并且通过将 垂直写入的记录磁化的磁化方向变得与垂直方向相同，并且实现更高的记录密度。

公开(公告)号：US08111591B2

公开(公告)日：2012-02-07

申请号：US12458954

申请日：2009-07-28

申请人： Koji Shimazawa ,  Tomohito Mizuno ,  Eiji Komura

发明人： Koji Shimazawa ,  Tomohito Mizuno ,  Eiji Komura

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/001 ,  G11B2005/0021

摘要： A heat-assisted magnetic recording head includes a slider, and an edge-emitting laser diode fixed to the slider. The slider includes: a substrate; and an MR element, two reproduction wiring layers, a coil, two recording wiring layers, a magnetic pole, a near-field light generating element, and a waveguide that are stacked above the top surface of the substrate. The two reproduction wiring layers supply a sense current to the MR element. The two recording wiring layers supply a coil current to the coil, The laser diode has an emitting end face including an emission part for emitting laser light, and a bottom surface, The laser diode is arranged so that the bottom surface faces the top surface of the slider. As viewed from above, the laser diode does not overlap the two reproduction wiring layers but overlaps at least one of the two recording wiring layers.

摘要翻译： 热辅助磁记录头包括滑块和固定到滑块的边缘发射激光二极管。 滑块包括：基板; 以及层叠在基板的上表面上方的MR元件，两个再现布线层，线圈，两个记录布线层，磁极，近场光产生元件和波导。 两个再现布线层向MR元件提供感测电流。 两个记录布线层向线圈提供线圈电流。激光二极管具有包括用于发射激光的发射部分的发射端面和底表面。激光二极管被布置成使得底表面面向 滑块。 如上所述，激光二极管不与两个再现布线层重叠，而是与两个记录布线层中的至少一个重叠。

公开(公告)号：US20110038236A1

公开(公告)日：2011-02-17

申请号：US12540752

申请日：2009-08-13

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tsutomu Chou

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tsutomu Chou

IPC分类号： G11B11/00 ,  G11B5/02

CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/001

摘要： Provided is a near-field light transducer with a propagation edge in which the generation of defects is suppressed. The transducer is formed of a Ag alloy and comprises an edge, the edge comprising a portion to be coupled with a light in a surface plasmon mode, the edge extending from the portion to a near-field light generating end surface, and the edge being configured to propagate surface plasmon excited by the light. Further, a curvature radius of the rounded edge is set in the range from 6.25 nm to 20 nm. In the edge and its vicinity, the generation of defects such as cracking and chipping is suppressed. Thereby improved are a propagation efficiency of surface plasmon and a light use efficiency of the transducer. The Ag alloy preferably contains at least one element selected from a group of Pd, Au, Cu, Ru, Rh and Ir.

摘要翻译： 提供了具有传播边缘的近场光传感器，其中抑制了缺陷的产生。 传感器由Ag合金形成并且包括边缘，边缘包括要与表面等离子体激元模式的光耦合的部分，边缘从该部分延伸到近场光产生端表面，并且该边缘是 配置为传播由光激发的表面等离子体激元。 此外，圆角边缘的曲率半径设定在6.25nm至20nm的范围内。 在边缘及其附近，抑制诸如破裂和碎裂的缺陷的产生。 从而改进了表面等离子体激元的传播效率和传感器的光利用效率。 Ag合金优选含有选自Pd，Au，Cu，Ru，Rh和Ir中的至少一种元素。

公开(公告)号：US20110026378A1

公开(公告)日：2011-02-03

申请号：US12458954

申请日：2009-07-28

申请人： Koji Shimazawa ,  Tomohito Mizuno ,  Eiji Komura

发明人： Koji Shimazawa ,  Tomohito Mizuno ,  Eiji Komura

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/001 ,  G11B2005/0021

摘要： A heat-assisted magnetic recording head includes a slider, and an edge-emitting laser diode fixed to the slider. The slider includes: a substrate; and an MR element, two reproduction wiring layers, a coil, two recording wiring layers, a magnetic pole, a near-field light generating element, and a waveguide that are stacked above the top surface of the substrate. The two reproduction wiring layers supply a sense current to the MR element. The two recording wiring layers supply a coil current to the coil. The laser diode has an emitting end face including an emission part for emitting laser light, and a bottom surface. The laser diode is arranged so that the bottom surface faces the top surface of the slider. As viewed from above, the laser diode does not overlap the two reproduction wiring layers but overlaps at least one of the two recording wiring layers.

摘要翻译： 热辅助磁记录头包括滑块和固定到滑块的边缘发射激光二极管。 滑块包括：基板; 以及层叠在基板的上表面上方的MR元件，两个再现布线层，线圈，两个记录布线层，磁极，近场光产生元件和波导。 两个再现布线层向MR元件提供感测电流。 两个记录布线层向线圈提供线圈电流。 激光二极管具有包括用于发射激光的发射部分和底面的发射端面。 激光二极管被布置成使得底表面面向滑块的顶表面。 如上所述，激光二极管不与两个再现布线层重叠，而是与两个记录布线层中的至少一个重叠。

公开(公告)号：US07808748B2

公开(公告)日：2010-10-05

申请号：US11709148

申请日：2007-02-22

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Keita Kawamori

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Keita Kawamori

IPC分类号： G11B5/48

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： A pinned layer of an MR element includes an underlying magnetic layer made of a magnetic alloy layer having a body-centered cubic structure, and a Heusler alloy layer formed on the underlying magnetic layer. A free layer of the MR element includes an underlying magnetic layer made of a magnetic alloy layer having a body-centered cubic structure, and a Heusler alloy layer formed on the underlying magnetic layer. Each of these two Heusler alloy layers is made of a CoMnSi alloy having an Mn content higher than 25 atomic percent and lower than or equal to 40 atomic percent, and contains a principal component having a B2 structure in which Co atoms are placed at body-centered positions of unit cells and Mn atoms or Si atoms are randomly placed at vertexes of the unit cells.

摘要翻译： MR元件的被钉扎层包括由具有体心立方结构的磁性合金层制成的下层磁性层，以及形成在下面的磁性层上的Heusler合金层。 MR元件的自由层包括由具有体心立方结构的磁性合金层制成的下层磁性层和形成在下面的磁性层上的Heusler合金层。 这两个Heusler合金层中的每一个由Mn含量高于25原子％且低于或等于40原子％的CoMnSi合金制成，并且包含具有其中Co原子被置于体态的B2结构的主要成分， 单元电池的中心位置和Mn原子或Si原子随机放置在单位晶胞的顶点。