摘要:
A center-channel protector for a vehicle sash door is arranged between a main sash and a center channel. A body of the protector has an H-shaped upper-end surface which is compatible to cover the upper end of the center channel.The body integrally includes a pair of branch covering portions corresponding to a pair of branch portions constituting the center channel and a middle covering portion disposed between the branch covering portions so as to connect the both branch covering portions therewith. An engaging portion is provided with the body and is mechanically engaged, in a direction intersecting a vertical direction, with an engaged portion which is provided with a center channel side. In collaboration with the engaged portion, the engaging portion constitutes a fastening mechanism by which the protector is fastened on the center channel.
摘要:
Provided are a semiconductor device comprising a semiconductor substrate, a first insulating film formed thereover, interconnects formed over the first insulating film and having copper as a main component, a second insulating film formed over the upper surface and side surfaces of each of the interconnects and over the first insulating film and having a function of suppressing or preventing copper diffusion, and a third insulating film formed over the second insulating film and having a dielectric constant lower than that of the second insulating film; and a method of manufacturing the semiconductor device. This invention makes it possible to improve dielectric breakdown strength between copper interconnects and reduce capacitance between the copper interconnects.
摘要:
A cushion for protecting a vehicle occupant's head. The cushion inflates and deploys smoothly and is configured so that gas leakage out of the cushion is reduced in order to maintain the inner pressure high for an extended period of time. The cushion includes a protective cushion element and outer shell fabrics superposed on both outer surfaces of the protective cushion element. The cushion element includes a cabin-side base fabric and a window-side base fabric that are sewn together by sewing yarns after being bonded to each other by adhesive. The outer shell fabrics are bonded to the protective cushion element by adhesives. When the protective cushion element is inflated, the outer shell fabrics are tightly stretched over the outer surfaces of the inflated protective cushion element so as to cover depressed portions of the base fabrics.
摘要:
In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.
摘要:
A heat retaining knit fabric is comprised of a knit textile design for outer clothing exposed in an open air wherein heat is retained inside a knit structure and a dispersion of heat is prevented when using heat of wetting generating fiber which generates heat by water adsorption and steam adsorption in a interlock stitch of plating stitch comprising minute space surrounded by two kinds of yarn at the front and the back of each knitted loop in a knit-loop portion.