摘要:
An electrical-discharge machining apparatus for machining a workpiece using an aqueous machining fluid includes an insulator for electrically insulating a machine platen from the workpiece where the workpiece is placed. A machining-fluid-property measuring instrument measures the state of the machining fluid; and a machining-fluid-property controller maintains the pH of the machining fluid so as to be kept within 8.5 through 10.5.
摘要:
A thin-film crystal wafer having a pn junction includes a first crystal layer of p GaAs, a second crystal layer of n InxAlyGa1−x−yP, the first and second crystal layers being lattice-matched layers that form a heterojunction, and a control layer of a thin-film of InxAlyGa1−x−yP differing in composition from the n InxAlyGa1−x−yP of the second crystal layer is formed at the interface of the heterojunction. The control layer enables the energy discontinuity at the interface of the InxAlyGa1−x−yP/GaAs heterojunction to be set within a relatively broad range of values and thus enables the current amplification factor and the offset voltage to be matched to specification values by varying the energy band gap at the heterojunction.
摘要翻译:具有pn结的薄膜晶体晶片包括p GaAs的第一晶体层,n In x Al y Ga 1-x-y P的第二晶体层,第一和第二晶体层是形成异质结的晶格匹配层,以及控制 在异质结的界面处形成与第二晶体层的n In x Al y Ga 1-x-y P的组成不同的In x Al y Ga 1-x-y P的薄膜层。 控制层使InxAlyGa1-x-yP / GaAs异质结的界面处的能量不连续性设定在相对宽的值范围内,从而使电流放大系数和偏移电压能够通过改变 异质结能带隙。
摘要:
In a wire electrical discharge machining apparatus, an upper main-discharge power supply is connected between an upper conducting terminal and a workpiece using an upper main-feeder line capable of configuring outward and homeward paths, and a lower main-discharge power supply is connected between a lower conducting terminal and the workpiece using a lower main-feeder line capable of configuring outward and homeward paths. Moreover, a sub-discharge power supply is connected between the upper conducting terminal and the workpiece and between the lower conducting terminal and the workpiece using an upper and a lower sub-feeder lines that have higher impedances than the impedances of the upper and the lower main-feeder lines and can configure outward and homeward paths.
摘要:
An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0 and 27°.
摘要:
A wire electric discharge machine includes a wire electrode; a machining power supply that supplies a machining current to between the wire electrode and a workpiece; a first power feed contact and a second power feed contact that respectively feed power to the wire electrode; a first machining-current loop that lets a first machining current to flow from the first power feed contact toward the workpiece; a second machining-current loop that lets a second machining current to flow from the second power feed contact toward the workpiece; an impedance switching circuit that is provided in at least any one of the first machining-current loop and the second machining-current loop; and a control unit that controls a flow ratio of the first machining current and the second machining current by changing an impedance of the impedance switching circuit.
摘要:
An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.
摘要:
In a content management method, content data is encrypted by a first key, the first key is encrypted by plural types of second keys, the encrypted first key is multiply encrypted by a third key, and the third key is encrypted by a fourth key. These encrypted content data, a medium key which is the first key encrypted by the second key and a move key which is a first key multiply encoded by the second and third keys are recorded in a recording medium, the third key encrypted by the fourth key is recorded in a security region. This management method is managed by the move key and the medium key.
摘要:
A first cutter 130 (cutting unit) is provided between a color recording unit 120 (the first printing unit) and an overcoat recording unit 140 (the second printing unit). A portion whereon color printing is completed by the color recording unit 120 of a recording paper 200 (printing medium) is cut off by the first cutter 130 and detached. An overcoat recording unit 140 performs an overcoat process on the detached recording paper (printing medium strip). In parallel with this, the color recording unit 120 performs next color printing on the recording paper 200. This makes it possible to reduce a printing time in a printing device including a plurality of printing processes without deteriorating printing quality. Further, an useless paper feeding is eliminated by optimally arranging the color recording unit 120, the first cutter 130, the overcoat recording unit 140, and the second cutter 160, etc. in accordance with a size of a printing area.
摘要:
A transmitting method of digital data whereby information data can be reproduced at a high precision. In order to retain digital data in sectors comprising a plurality of sync frames and sequentially transmit, the sync frame is comprised of the sync signal and the run length limited code which satisfies the limitations of the minimum run length and the maximum run length, and the sync signal includes the sync pattern constituted by a bit pattern of a run length that is longer than the maximum run length by only 3T and addition bit patterns which are arranged before and after the bit pattern and each of which has a urn length that is longer than the minimum run length. The sync signal includes a specific code which indicates a position in the sector and which enables the DC control to be performed.
摘要:
A compound semiconductor device comprising a hetero junction bipolar transistor including a compound semiconductor substrate, and a sub-collector layer, a collector layer, a base layer and an emitter layer formed in this order as thin crystalline layers on the compound semiconductor substrate by vapor phase deposition, wherein the base layer is a thin film of a p-type compound semiconductor doped with C and no peak of a type of bonding between H and C, C2-H, is detected in infrared absorption measurement at room temperature.