Thin-film crystal wafer having pn junction and method for fabricating the wafer
    42.
    发明授权
    Thin-film crystal wafer having pn junction and method for fabricating the wafer 有权
    具有pn结的薄膜晶体晶片和用于制造晶片的方法

    公开(公告)号:US07923752B2

    公开(公告)日:2011-04-12

    申请号:US10046739

    申请日:2002-01-17

    IPC分类号: H01L29/735 H01L29/739

    CPC分类号: H01L29/66318 H01L29/205

    摘要: A thin-film crystal wafer having a pn junction includes a first crystal layer of p GaAs, a second crystal layer of n InxAlyGa1−x−yP, the first and second crystal layers being lattice-matched layers that form a heterojunction, and a control layer of a thin-film of InxAlyGa1−x−yP differing in composition from the n InxAlyGa1−x−yP of the second crystal layer is formed at the interface of the heterojunction. The control layer enables the energy discontinuity at the interface of the InxAlyGa1−x−yP/GaAs heterojunction to be set within a relatively broad range of values and thus enables the current amplification factor and the offset voltage to be matched to specification values by varying the energy band gap at the heterojunction.

    摘要翻译: 具有pn结的薄膜晶体晶片包括p GaAs的第一晶体层,n In x Al y Ga 1-x-y P的第二晶体层,第一和第二晶体层是形成异质结的晶格匹配层,以及控制 在异质结的界面处形成与第二晶体层的n In x Al y Ga 1-x-y P的组成不同的In x Al y Ga 1-x-y P的薄膜层。 控制层使InxAlyGa1-x-yP / GaAs异质结的界面处的能量不连续性设定在相对宽的值范围内,从而使电流放大系数和偏移电压能够通过改变 异质结能带隙。

    WIRE ELECTRICAL DISCHARGE MACHINING APPARATUS
    43.
    发明申请
    WIRE ELECTRICAL DISCHARGE MACHINING APPARATUS 有权
    电线放电加工设备

    公开(公告)号:US20100224596A1

    公开(公告)日:2010-09-09

    申请号:US12377526

    申请日:2006-10-24

    IPC分类号: B23H1/04

    CPC分类号: B23H7/04 B23H7/107

    摘要: In a wire electrical discharge machining apparatus, an upper main-discharge power supply is connected between an upper conducting terminal and a workpiece using an upper main-feeder line capable of configuring outward and homeward paths, and a lower main-discharge power supply is connected between a lower conducting terminal and the workpiece using a lower main-feeder line capable of configuring outward and homeward paths. Moreover, a sub-discharge power supply is connected between the upper conducting terminal and the workpiece and between the lower conducting terminal and the workpiece using an upper and a lower sub-feeder lines that have higher impedances than the impedances of the upper and the lower main-feeder lines and can configure outward and homeward paths.

    摘要翻译: 在线放电加工装置中,上侧主放电电源使用能够构成向外和回路的上部主馈线连接在上导电端子和工件之间,并且连接较低的主放电电源 在下导电端子和工件之间使用能够构成向外和回路的下主馈线。 此外,使用具有比上下阻抗更高的阻抗的上下辅助线将副放电电源连接在上导电端子和工件之间以及下导电端子与工件之间 主馈线,可配置向外和回路。

    WIRE ELECTRIC DISCHARGE MACHINE
    45.
    发明申请
    WIRE ELECTRIC DISCHARGE MACHINE 有权
    电线放电机

    公开(公告)号:US20090314747A1

    公开(公告)日:2009-12-24

    申请号:US12374956

    申请日:2006-10-24

    IPC分类号: B23H1/02

    摘要: A wire electric discharge machine includes a wire electrode; a machining power supply that supplies a machining current to between the wire electrode and a workpiece; a first power feed contact and a second power feed contact that respectively feed power to the wire electrode; a first machining-current loop that lets a first machining current to flow from the first power feed contact toward the workpiece; a second machining-current loop that lets a second machining current to flow from the second power feed contact toward the workpiece; an impedance switching circuit that is provided in at least any one of the first machining-current loop and the second machining-current loop; and a control unit that controls a flow ratio of the first machining current and the second machining current by changing an impedance of the impedance switching circuit.

    摘要翻译: 线放电机包括线电极; 加工电源,其在线电极和工件之间提供加工电流; 第一馈电触点和第二馈电触点,其分别向线电极供电; 第一加工电流回路,其使第一加工电流从第一供电触头流向工件; 第二加工电流回路,其使第二加工电流从所述第二供电触头流向所述工件; 阻抗切换电路,其设置在所述第一加工电流回路和所述第二加工电流回路中的至少任一个中; 以及控制单元,其通过改变阻抗切换电路的阻抗来控制第一加工电流和第二加工电流的流量比。

    Printing Device and Printing Method
    48.
    发明申请
    Printing Device and Printing Method 失效
    印刷装置和印刷方法

    公开(公告)号:US20090116893A1

    公开(公告)日:2009-05-07

    申请号:US11920743

    申请日:2006-07-03

    IPC分类号: B41J11/00

    摘要: A first cutter 130 (cutting unit) is provided between a color recording unit 120 (the first printing unit) and an overcoat recording unit 140 (the second printing unit). A portion whereon color printing is completed by the color recording unit 120 of a recording paper 200 (printing medium) is cut off by the first cutter 130 and detached. An overcoat recording unit 140 performs an overcoat process on the detached recording paper (printing medium strip). In parallel with this, the color recording unit 120 performs next color printing on the recording paper 200. This makes it possible to reduce a printing time in a printing device including a plurality of printing processes without deteriorating printing quality. Further, an useless paper feeding is eliminated by optimally arranging the color recording unit 120, the first cutter 130, the overcoat recording unit 140, and the second cutter 160, etc. in accordance with a size of a printing area.

    摘要翻译: 第一切割器130(切割单元)设置在彩色记录单元120(第一印刷单元)和外涂层记录单元140(第二印刷单元)之间。 由记录纸200(打印介质)的彩色记录单元120完成彩色打印的部分被第一切割器130切断并分离。 外涂层记录单元140对分离的记录纸(打印介质条)执行外涂层处理。 与此并行地,彩色记录单元120在记录纸张200上执行下一次彩色打印。这使得可以在不降低打印质量的情况下减少包括多个打印处理的打印装置中的打印时间。 此外,通过根据打印区域的尺寸优化布置彩色记录单元120,第一切割器130,外涂层记录单元140和第二切割器160等来消除无用的进纸。

    Compound semiconductor device and process for producing the same
    50.
    发明申请
    Compound semiconductor device and process for producing the same 审中-公开
    复合半导体器件及其制造方法

    公开(公告)号:US20060131607A1

    公开(公告)日:2006-06-22

    申请号:US10546760

    申请日:2004-02-04

    IPC分类号: H01L31/109

    CPC分类号: H01L29/66318 H01L29/7371

    摘要: A compound semiconductor device comprising a hetero junction bipolar transistor including a compound semiconductor substrate, and a sub-collector layer, a collector layer, a base layer and an emitter layer formed in this order as thin crystalline layers on the compound semiconductor substrate by vapor phase deposition, wherein the base layer is a thin film of a p-type compound semiconductor doped with C and no peak of a type of bonding between H and C, C2-H, is detected in infrared absorption measurement at room temperature.

    摘要翻译: 一种化合物半导体器件,包括:杂化双极晶体管,其包括化合物半导体衬底,以及副集电极层,集电极层,基极层和发射极层,依次形成为化合物半导体衬底上的薄层化合物 沉积,其中基层是掺杂有C的p型化合物半导体的薄膜,并且在室温下的红外吸收测量中没有检测到H和C之间的键合类型的峰--C2-H。