摘要:
A polymer comprising recurring units of formulae (1) to (4) wherein R1, R3, R4 and R7 are hydrogen or methyl, R2 is an acid labile group, R5 and R6 are hydrogen or hydroxyl, and R8 is a lactone structure group and having a Mw of 1,000-50,000 is provided. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and etching resistance and lends itself to lithographic micropatterning with electron beams or deep UV.
摘要:
The invention provides an acetal compound containing an adamantane ring having an alcoholic hydroxyl group which is protected with an acetal group having a carbonyl moiety of branched structure. A photoresist film comprising a polymer comprising recurring units derived from the acetal compound and an acid generator is characterized by a high dissolution contrast when it is subjected to exposure and organic solvent development to form an image via positive/negative reversal.
摘要:
Lactone-containing compounds having formula (1) are novel wherein A1 is a polymerizable functional group having a double bond, R1 is a monovalent C1-C10 hydrocarbon group in which some or all hydrogen atoms are substituted by fluorine atoms, and W is CH2, O or S. They are useful as monomers to produce polymers for the formulation of radiation-sensitive resist compositions which have high transparency to radiation of up to 500 nm and exhibit good development properties. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography.
摘要:
Lactone-containing compounds having formula (1) are novel wherein A1 is a polymerizable functional group having a double bond, R1 is a monovalent C1-C10 hydrocarbon group in which some or all hydrogen atoms are substituted by fluorine atoms, and W is CH2, O or S. They are useful as monomers to produce polymers for the formulation of radiation-sensitive resist compositions which have high transparency to radiation of up to 500 nm and exhibit good development properties. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography.
摘要:
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator which is a specific sulfonium salt compound. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]dodecane structure, di- or trihydroxyadamantyl units, and monocyclic lactone units.
摘要:
A novel polymer is obtained by copolymerizing a (meth)acrylic acid derivative with a vinyl ether compound, an allyl ether compound and an oxygen-containing alicyclic olefin compound. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
摘要:
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]-dodecane structure, hydroxyadamantane units, monocyclic lactone units, and carboxylic acid units. The acid generator (B) is a specific sulfonium salt compound.
摘要:
An ether compound of formula (1) is provided wherein R1 is H or C1-6 alkyl, R2 is C1-6 alkyl, R3 is H, C1-15 acyl or C1-25 alkoxycarbonyl which may be substituted with halogen atoms, k is 0 or 1, m is from 0 to 3, and n is from 3 to 6. The ether compound is polymerized to form a polymer having improved reactivity, robustness and substrate adhesion. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.
摘要:
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]-dodecane structure, hydroxyadamantane units, monocyclic lactone units, and carboxylic acid units. The acid generator (B) is a specific sulfonium salt compound.
摘要:
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator which is a specific sulfonium salt compound. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]dodecane structure, di- or trihydroxyadamantyl units, and monocyclic lactone units.