公开(公告)号：US09040220B2

公开(公告)日：2015-05-26

申请号：US13410613

申请日：2012-03-02

申请人： Hideo Hada ,  Yoshiyuki Utsumi ,  Keita Ishiduka ,  Kensuke Matsuzawa ,  Fumitake Kaneko ,  Kyoko Ohshita ,  Hiroaki Shimizu ,  Yasuhiro Yoshii

发明人： Hideo Hada ,  Yoshiyuki Utsumi ,  Keita Ishiduka ,  Kensuke Matsuzawa ,  Fumitake Kaneko ,  Kyoko Ohshita ,  Hiroaki Shimizu ,  Yasuhiro Yoshii

IPC分类号： G03F7/004 ,  G03F7/30 ,  C07C303/32 ,  C07C309/06 ,  C07C309/12 ,  C07C309/19 ,  C07C381/12 ,  C07C309/17 ,  C07D333/46 ,  C07D493/18 ,  G03F7/038 ,  G03F7/039 ,  C08K5/19 ,  C08K5/42

CPC分类号： C07C381/12 ,  C07C303/32 ,  C07C309/06 ,  C07C309/12 ,  C07C309/17 ,  C07C309/19 ,  C07C2603/74 ,  C07D333/46 ,  C07D493/18 ,  C08K5/19 ,  C08K5/42 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/123

摘要： A resist composition including a base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon exposure, the acid-generator including an acid generator consisting of a compound represented by general formula (b1-1) shown below: In which RX represents a hydrocarbon group which may have a substituent exclusive of a nitrogen atom; each of Q2 and Q3 independently represents a single bond or a divalent linkage group; Y1 represents an alkylene group or fluorinated alkyl group of 1 to 4 carbon atoms; and Z+ represents an organic cation exclusive of an ion represented by general formula (w-1).

摘要翻译： 一种抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出改变的溶解性的基础成分和暴露时产生酸的酸发生剂成分，所述酸发生剂包括由通式（b1）表示的化合物 -1），其中RX表示可以具有不包括氮原子的取代基的烃基; Q2和Q3各自独立地表示单键或二价连接基团; Y1表示1〜4个碳原子的亚烷基或氟代烷基; Z +表示除通式（w-1）表示的离子的有机阳离子。

公开(公告)号：US09034556B2

公开(公告)日：2015-05-19

申请号：US12338661

申请日：2008-12-18

申请人： Hideo Hada ,  Yoshiyuki Utsumi ,  Keita Ishiduka ,  Kensuke Matsuzawa ,  Fumitake Kaneko ,  Kyoko Ohshita ,  Hiroaki Shimizu ,  Yasuhiro Yoshii

发明人： Hideo Hada ,  Yoshiyuki Utsumi ,  Keita Ishiduka ,  Kensuke Matsuzawa ,  Fumitake Kaneko ,  Kyoko Ohshita ,  Hiroaki Shimizu ,  Yasuhiro Yoshii

IPC分类号： G03F7/004 ,  G03F7/30 ,  C07C303/32 ,  C07C309/06 ,  C07C309/12 ,  C07C309/19 ,  C07C381/12 ,  C07C309/17 ,  C07D333/46 ,  C07D493/18 ,  G03F7/038 ,  G03F7/039 ,  C08K5/19 ,  C08K5/42

CPC分类号： C07C381/12 ,  C07C303/32 ,  C07C309/06 ,  C07C309/12 ,  C07C309/17 ,  C07C309/19 ,  C07C2603/74 ,  C07D333/46 ,  C07D493/18 ,  C08K5/19 ,  C08K5/42 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/123

摘要： A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1-1) shown below: wherein RX represents a hydrocarbon group which may have a substituent exclusive of a nitrogen atom; each of Q2 and Q3 independently represents a single bond or a divalent linkage group; Y1 represents an alkylene group or fluorinated alkyl group of 1 to 4 carbon atoms; and Z+ represents an organic cation exclusive of an ion represented by general formula (w-1).

摘要翻译： 一种抗蚀剂组合物，其包含在酸的作用下在碱性显影液中溶解度变化的碱成分（A）和曝光时产生酸的酸发生剂成分（B），所述酸发生剂成分（B）含有酸发生剂 （B1）由下述通式（b1-1）表示的化合物组成：其中RX表示可以具有不包括氮原子的取代基的烃基; Q2和Q3各自独立地表示单键或二价连接基团; Y1表示1〜4个碳原子的亚烷基或氟代烷基; Z +表示除通式（w-1）表示的离子的有机阳离子。

公开(公告)号：US08921029B2

公开(公告)日：2014-12-30

申请号：US13551807

申请日：2012-07-18

申请人： Koji Ichikawa ,  Yukako Anryu ,  Shingo Fujita

发明人： Koji Ichikawa ,  Yukako Anryu ,  Shingo Fujita

IPC分类号： G03F7/004 ,  G03F7/38 ,  C07C303/32 ,  C07C309/06 ,  C07C309/12 ,  C07D333/46 ,  C07D335/02 ,  G03F7/039 ,  G03F7/20

CPC分类号： G03F7/0045 ,  C07C303/32 ,  C07C309/06 ,  C07C309/12 ,  C07D333/46 ,  C07D335/02 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/123

摘要： A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator represented by the formula (II), wherein R1, A1, R2, RII1, RII2, LII1, YII1, RII3, RII4, RII5, RII6, RII7, n, s and RII8 are defined in the specification.

摘要翻译： 一种抗蚀剂组合物，其具有由式（I）表示的结构单元的树脂，树脂在碱性水溶液中不溶或难溶，但通过酸而不溶于碱性水溶液，不包括结构单元 由式（I）表示的酸产生剂和由式（II）表示的酸产生剂，其中R1，A1，R2，RII1，RII2，LII1，YII1，RII3，RII4，RII5，RII6，RII7，n，s和RII8 在规范中定义。

公开(公告)号：US20140356790A1

公开(公告)日：2014-12-04

申请号：US14458657

申请日：2014-08-13

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Yoshinori HIRANO ,  Hideyoshi YANAGISAWA

IPC分类号： G03F7/038

CPC分类号： G03F7/0384 ,  B81B2203/0384 ,  B81C1/00111 ,  G03F7/00 ,  G03F7/023 ,  G03F7/0236 ,  G03F7/38 ,  G03F7/40 ,  Y10S430/122 ,  Y10S430/123

摘要： A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin.

摘要翻译： 通过图案化牺牲膜来制造微结构，在图案上形成无机材料膜，并通过孔蚀刻掉牺牲膜图案，以限定具有图案轮廓的空间。 图案化阶段包括以下步骤：（A）用包含甲酚酚醛清漆树脂，交联剂和光酸产生剂的组合物涂布基材，（B）加热以形成牺牲膜，（C）图案曝光，（D）显影 以形成牺牲膜图案，和（E）在甲酚酚醛清漆树脂内形成交联。

公开(公告)号：US08852845B2

公开(公告)日：2014-10-07

申请号：US12641877

申请日：2009-12-18

申请人： Hidenori Takahashi ,  Tomotaka Tsuchimura ,  Toru Tsuchihashi ,  Katsuhiro Yamashita ,  Hideaki Tsubaki

发明人： Hidenori Takahashi ,  Tomotaka Tsuchimura ,  Toru Tsuchihashi ,  Katsuhiro Yamashita ,  Hideaki Tsubaki

IPC分类号： G03F7/004 ,  G03F7/028 ,  G03F7/039

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/122 ,  Y10S430/123

摘要： Provided is a actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin containing (A) a repeating unit having an ionic structure moiety that contains a cation represented by formula (Ia) and is capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation: wherein each of R1a to R13a independently represents a hydrogen atom or a monovalent substituent and may combine together to form a ring, and Z represents a single bond or a divalent linking group.

摘要翻译： 本发明提供一种光化学射线敏感性或辐射敏感性树脂组合物，其包含（P）含有（A）具有离子性结构部分的重复单元的树脂，所述重复单元含有式（Ia）所示的阳离子，并且能够在 侧光在照射光化学射线或辐射时：其中R 1a至R 13a各自独立地表示氢原子或一价取代基，并且可以结合在一起形成环，Z表示单键或二价连接基团。

公开(公告)号：US08835091B2

公开(公告)日：2014-09-16

申请号：US13474795

申请日：2012-05-18

申请人： Yoshinori Hirano ,  Hideyoshi Yanagisawa

发明人： Yoshinori Hirano ,  Hideyoshi Yanagisawa

IPC分类号： G03F7/023 ,  G03F7/38 ,  G03F7/40 ,  B81C1/00

CPC分类号： G03F7/0384 ,  B81B2203/0384 ,  B81C1/00111 ,  G03F7/00 ,  G03F7/023 ,  G03F7/0236 ,  G03F7/38 ,  G03F7/40 ,  Y10S430/122 ,  Y10S430/123

摘要： A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin.

摘要翻译： 通过图案化牺牲膜来制造微结构，在图案上形成无机材料膜，并通过孔蚀刻去除牺牲膜图案，以限定具有图案轮廓的空间。 图案化阶段包括以下步骤：（A）用包含甲酚酚醛清漆树脂，交联剂和光酸产生剂的组合物涂布基材，（B）加热以形成牺牲膜，（C）图案曝光，（D）显影 以形成牺牲膜图案，和（E）在甲酚酚醛清漆树脂内形成交联。

公开(公告)号：US08663901B2

公开(公告)日：2014-03-04

申请号：US13614531

申请日：2012-09-13

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  G03F7/028 ,  G03F7/029 ,  C07D403/02 ,  C07D403/04

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

公开(公告)号：US08628909B2

公开(公告)日：2014-01-14

申请号：US13617875

申请日：2012-09-14

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  G03F7/028 ,  G03F7/26 ,  C07C309/04 ,  C07C309/25 ,  C07C309/26

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

公开(公告)号：US08609317B2

公开(公告)日：2013-12-17

申请号：US12833712

申请日：2010-07-09

申请人： Koji Ichikawa ,  Masako Sugihara ,  Yuko Yamashita

发明人： Koji Ichikawa ,  Masako Sugihara ,  Yuko Yamashita

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/38 ,  C07C69/63 ,  C07C69/712 ,  C07C69/753 ,  C07C69/757 ,  C07C205/57 ,  C07D333/76 ,  C08F28/02 ,  C08F28/06

CPC分类号： G03F7/066 ,  C07C62/22 ,  C07C63/08 ,  C07C69/63 ,  C07C69/712 ,  C07C69/753 ,  C07C69/757 ,  C07C205/57 ,  C07C309/17 ,  C07C381/12 ,  C07C2603/74 ,  C07D333/76 ,  C08F8/12 ,  C08F12/24 ,  C08F20/38 ,  C08F28/02 ,  C08F28/06 ,  C08F212/14 ,  C08F220/18 ,  C09D125/18 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/38 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/123 ,  C08F12/22 ,  C08F2220/1883 ,  C08F2220/1891 ,  C08F220/20 ,  C08F2220/283 ,  C08F220/38

摘要： A salt represented by the formula (I—Pb): wherein Xpb represents a single bond or —O—, Rpb represents a single bond etc., Ypb represents a polymerizable group, Zpb represents an organic group, Xpc represents a single bond or a C1-C4 alkylene group, and Rpc represents a C1-C10 aliphatic hydrocarbon group which can have one or more substituents etc.

摘要翻译： 由式（I-Pb）表示的盐：其中Xpb表示单键或-O-，Rpb表示单键等，Ypb表示可聚合基团，Zpb表示有机基团，Xpc表示单键或 C1-C4亚烷基，Rpc表示可以具有一个以上取代基等的C1-C10脂肪族烃基

公开(公告)号：US20130017491A1

公开(公告)日：2013-01-17

申请号：US13617875

申请日：2012-09-14

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： C07D333/62 ,  G03F7/20 ,  C07D277/76 ,  G03F7/027

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.