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    Method for forming a head having improved spin valve properties
    41.
    发明授权
    Method for forming a head having improved spin valve properties 失效
    用于形成具有改善的自旋阀性能的头的方法

    公开(公告)号：US07270854B2

    公开(公告)日：2007-09-18

    申请号：US10717128

    申请日：2003-11-19

    申请人： James Mac Freitag ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Mustafa Michael Pinarbasi

    IPC分类号： C23C14/00

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/302

    摘要： A method for forming a magnetic head having an improved PtMn layer, including forming a PtMn layer by ion beam deposition, forming an antiparallel (AP) pinned layer structure above the PtMn layer, and forming a free layer above the AP pinned layer structure. The method provides a spin valve structure having improved soft magnetic properties of the free layer as well as increases the dR/R of spin valve structures in which implemented.

    摘要翻译： 一种用于形成具有改进的PtMn层的磁头的方法，包括通过离子束沉积形成PtMn层，在PtMn层上方形成反平行（AP）钉扎层结构，并在AP钉扎层结构之上形成自由层。 该方法提供了具有改善的自由层的软磁性质的自旋阀结构，并且增加了实现的自旋阀结构的dR / R。

    Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement
    45.
    发明授权
    Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement 有权
    具有用于钉扎改善的各向异性固定层的磁阻传感器

    公开(公告)号：US07564659B2

    公开(公告)日：2009-07-21

    申请号：US11200796

    申请日：2005-08-09

    申请人： James Mac Freitag ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/39

    CPC分类号： G01R33/093

    摘要： A magnetoresistive sensor having a magnetically anisotropic pinned layer structure. The pinned layer structure is formed over a seed layer having a surface that has been treated to texture the surface of the seed layer with an anisotropic roughness. This anisotropic roughness induces the magnetic anisotropy in the pinned layers. The treated seed layers also allow the pinned layer to maintain robust pinning without the need for a thick AFM layer, thereby reducing gap size.

    摘要翻译： 具有磁各向异性固定层结构的磁阻传感器。 钉扎层结构形成在具有已经被处理以用各向异性粗糙度纹理种子层的表面的表面的籽晶层上。 这种各向异性的粗糙度引起钉扎层中的磁各向异性。 经处理的种子层还允许钉扎层保持坚固的钉扎，而不需要厚的AFM层，从而减小间隙尺寸。

    MAGNETORESISTIVE SENSOR HAVING AN ENHANCED FREE LAYER STABILIZATION MECHANISM
    46.
    发明申请
    MAGNETORESISTIVE SENSOR HAVING AN ENHANCED FREE LAYER STABILIZATION MECHANISM 审中-公开
    具有增强自由层稳定机构的磁传感器

    公开(公告)号：US20090161269A1

    公开(公告)日：2009-06-25

    申请号：US11962599

    申请日：2007-12-21

    申请人： James Mac Freitag ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932

    摘要： A magnetoresistive sensor having an improved hard bias stabilization structure. The sensor includes a hard bias layer that is formed on a surface that has been treated to form it with an anisotropic texture that induces a magnetic anisotropy oriented parallel with the air bearing surface. This magnetic anisotropy is further aided by a shape induced magnetic anisotropy caused by configuring the hard bias layers to have a width parallel with the air bearing surface that is larger than a stripe height of the hard bias layer measured perpendicular to the air bearing surface.

    摘要翻译： 具有改进的硬偏置稳定结构的磁阻传感器。 传感器包括形成在已经被处理以形成它的表面上的硬偏置层，其具有引导与空气轴承表面平行定向的磁各向异性的各向异性结构。 这种磁各向异性进一步受到形状诱导的磁各向异性的帮助，该形状引起的磁各向异性是由硬偏压层构成，其宽度与空气轴承表面平行，该宽度大于垂直于空气轴承表面测量的硬偏压层的条带高度。

    Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
    47.
    发明授权
    Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device 有权
    用于在磁存储器件的自由器中提供磁致伸缩控制的方法和装置

    公开(公告)号：US07505235B2

    公开(公告)日：2009-03-17

    申请号：US11751361

    申请日：2007-05-21

    申请人： James Mac Freitag ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/127

    CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/656 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/08

    摘要： A method and apparatus for providing magnetostriction control in a synthetic free layer of a magnetic memory device is disclosed. A first free layer of CoFe alloy has a first thickness. A second free layer of NiFe alloy has a second thickness. At least one of the CoFe alloy and NiFe alloy includes at least one of B, P, Si, Nb, Zr, Hf, Ta and Ti. The relative thicknesses of the first and second free layer are modified to obtain a desired magnetostriction without a change in the magenetoristance ratio, ΔR/R. The synthetic free layer may also be configured to have a net magnetic moment. A sensor may be a current-in-plane or a current-perpendicular-to-the-plane sensor. The sensor also may be configured to be a GMR sensor or a TMR sensor.

    摘要翻译： 公开了一种用于在磁存储器件的合成自由层中提供磁致伸缩控制的方法和装置。 CoFe合金的第一自由层具有第一厚度。 NiFe合金的第二自由层具有第二厚度。 CoFe合金和NiFe合金中的至少一种包括B，P，Si，Nb，Zr，Hf，Ta和Ti中的至少一种。 第一自由层和第二自由层的相对厚度被修改以获得期望的磁致伸缩，而不改变磁通比（DeltaR / R）。 合成自由层也可以被配置为具有净磁矩。 传感器可以是平面内电流或电流垂直于平面的传感器。 传感器也可以被配置为GMR传感器或TMR传感器。

    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip
    48.
    发明授权
    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
    自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性

    公开(公告)号：US07466524B2

    公开(公告)日：2008-12-16

    申请号：US11301877

    申请日：2005-12-13

    申请人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/127

    CPC分类号： G11B5/33 ,  G11B5/3932 ,  G11B2005/3996

    摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.

    摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

    Seedlayer for high hard bias layer coercivity
    49.
    发明授权
    Seedlayer for high hard bias layer coercivity 失效
    用于高硬偏置层矫顽力的种子层

    公开(公告)号：US07433163B2

    公开(公告)日：2008-10-07

    申请号：US11353341

    申请日：2006-02-13

    申请人： James Mac Freitag ,  Mohamad Towfik Krounbi ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Mohamad Towfik Krounbi ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/39

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/1278 ,  G11B5/3932 ,  G11B2005/0002 ,  H01F10/30 ,  H01F10/3254 ,  H01F41/302

    摘要： A seedlayer structure for a high coercivity hard bias layer is disclosed, having at least one bi-layer seedlayer, including a CrMo layer, and a W layer fabricated on the CrMo layer. A hard bias layer is fabricated on the bi-layer seedlayer. Preferably, the seedlayer structure includes two bi-layer seedlayers, which including a first CrMo layer, a first W layer fabricated on the first CrMo layer, a second CrMo layer fabricated on the first W layer, and a second W layer fabricated on the second CrMo layer. Also disclosed is a high coercivity hard bias stack structure, a magnetic read head for a disk drive having a high coercivity hard bias stack structure and a method for fabricating a coercivity hard bias layer for a magnetic read head.

    摘要翻译： 公开了一种用于高矫顽力硬偏置层的种子层结构，其具有至少一个双层种子层，包括CrMo层和在CrMo层上制造的W层。 在双层子层上制造硬偏置层。 优选地，种子层结构包括两个双层种子层，其包括第一CrMo层，在第一CrMo层上制造的第一W层，在第一W层上制造的第二CrMo层和在第二层上制造的第二W层 CrMo层。 还公开了高矫顽力硬偏置堆叠结构，用于具有高矫顽力硬偏置堆叠结构的磁盘驱动器的磁读头和用于制造磁读头的矫顽力硬偏置层的方法。

    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip
    50.
    发明授权
    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
    自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性

    公开(公告)号：US07019949B2

    公开(公告)日：2006-03-28

    申请号：US10732200

    申请日：2003-12-10

    申请人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/127

    CPC分类号： G11B5/33 ,  G11B5/3932 ,  G11B2005/3996

    摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.

    摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。