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1.发明授权公开(公告)号：US07627942B2
公开(公告)日：2009-12-08
申请号：US11090457
申请日：2005-03-25
IPC分类号： G11B5/17
CPC分类号： G11B5/3133 , G11B5/17 , G11B5/3136 , G11B5/3163 , Y10T29/49041 , Y10T29/4906 , Y10T29/49064
摘要： A method for fabricating a magnetic write head with a coil with a high aspect ratio using a Chemical Vapor Deposition process such as Atomic Layer Deposition (ALD), High Speed ALD, Plasma Enhanced ALD (PEALD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD) to form encapsulating films over the coils without voids is disclosed. Materials which can be used for encapsulation include Al2O3, SiO2, AlN, Ta2O5, HfO2, ZrO2, and YtO3. The use of an ultra-conformal deposition process allows the pitch of the coils to be smaller than it is possible in the prior art. The method also allows materials with a smaller coefficient of thermal expansion than hardbake photoresist to be used with resulting improvements in thermal protrusion characteristics.
摘要翻译： 使用诸如原子层沉积（ALD），高速ALD，等离子体增强ALD（PEALD），等离子体增强化学气相沉积（PECVD）等化学气相沉积工艺制造具有高纵横比的线圈的磁写头的方法， 或低压化学气相沉积（LPCVD）以在无空隙的线圈上形成封装膜。 可用于封装的材料包括Al2O3，SiO2，AlN，Ta2O5，HfO2，ZrO2和YtO3。 使用超适形沉积工艺允许线圈的间距小于现有技术中可能的间距。 该方法还允许使用具有比硬质光刻胶更小的热膨胀系数的材料，从而提高热突起特性。
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公开(公告)号：US20080124942A1
公开(公告)日：2008-05-29
申请号：US12019403
申请日：2008-01-24
CPC分类号： B82Y25/00 , B82Y10/00 , G03F7/091 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01L21/0276 , H01L21/0332
摘要： A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The bi-layer anti-reflection coating features a first layer, an absorption layer, disposed on a second layer, a dielectric layer, which is then disposed between a substrate and a photoresist layer. The dielectric/absorption layer comprises one combination selected from Ta/Al2O3, Ta/SiO2, Ta/TiO2, Ta/Ta2O5, Ta/Cr2O3, Ta/Si3N4, Ti/Al2O3, Ti/SiO2, Ti/TiO2, Ti/Ta2O5, Ti/Cr2O3, Ti/Si3N4, Cr/Al2O3, Cr/SiO2, Cr/TiO2, Cr/Ta2O5, Cr/Cr2O3, Cr/Si3N4, Al/Al2O3, Al/TiO2, Al/Ta2O5, Al/Cr2O3, Al/Si3N4, Ni/Al2O3, Ni/SiO2, Ni/TiO2, Ni/Ta2O5, Ni/Cr2O3, Ni/Si3N4, Ir/Al2O3, Ir/SiO2, Ir/TiO2, Ir/Ta2O5, Ir/Cr2O3, and Ir/Si3N4. At least the absorption and dielectric layers can be formed using vacuum deposition. A unique character of the bi-layer anti-reflective coatings is that it allows a thinner anti-reflection layer that has a wider process latitude.
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3.发明授权Method for improving hard bias properties of layers in a magnetoresistive sensor 有权改善磁阻传感器层的硬偏置特性的方法公开(公告)号：US07111385B2
公开(公告)日：2006-09-26
申请号：US10675126
申请日：2003-09-30
申请人： Phong V. Chau , James Mac Freitag , Mustafa Michael Pinarbasi , Hua Ai Zeng , Howard Gordon Zolla
发明人： Phong V. Chau , James Mac Freitag , Mustafa Michael Pinarbasi , Hua Ai Zeng , Howard Gordon Zolla
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49004 , Y10T29/49007 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A method for improving hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a first layer of silicon and a second layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.
摘要翻译： 公开了一种用于改善磁阻传感器的层的硬偏置特性的方法。 使用包括至少第一层硅的种子层结构和包含铬或铬钼的第二层来改善硬偏置层的性质。 此外，当种子层结构包括一层钽时，实现了益处。
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4.发明授权公开(公告)号：US06877213B2
公开(公告)日：2005-04-12
申请号：US10041004
申请日：2002-01-07
申请人： Howard Gordon Zolla
发明人： Howard Gordon Zolla
CPC分类号： G11B5/3903 , G11B5/3116 , G11B5/3163 , G11B5/332 , G11B5/3967 , Y10T29/49025 , Y10T29/49041 , Y10T29/49046
摘要： A method for reducing feature size in a thin film magnetic write head includes plating a seed layer over a selected base layer, spinning a photoresist layer onto the seed layer, defining a trench in the photoresist layer, depositing an insulative spacer layer to cover the trench side walls using a low temperature chemical vapor deposition process, anisotropically etching to remove spacer layer material from the bottom of the trench and thereby expose the plating seed layer while leaving intact vertical portions of the spacer layer that cover the trench side walls and narrow its width, forming a structure of reduced feature size by electroplating metallic material into the narrowed trench, stripping away the photoresist layer and the spacer layer vertical portions, and milling or sputter etching the plating seed layer to leave a structure of reduced feature size.
摘要翻译： 一种用于减小薄膜磁写头中的特征尺寸的方法包括在所选择的基层上电镀种子层，将光致抗蚀剂层旋转到种子层上，在光致抗蚀剂层中限定沟槽，沉积绝缘间隔层以覆盖沟槽 侧壁，使用低温化学气相沉积工艺，各向异性蚀刻以从沟槽的底部去除间隔层材料，从而暴露电镀种子层，同时留下覆盖沟槽侧壁的间隔层的完整垂直部分并使其宽度变窄 通过将金属材料电镀到狭窄的沟槽中，剥离光致抗蚀剂层和间隔层垂直部分，并且研磨或溅射蚀刻电镀种子层以留下特征尺寸减小的结构，从而形成尺寸减小的结构。
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5.发明授权Apparatus having a hard bias seedlayer structure for providing improved properties of a hard bias layer 失效具有用于提供硬偏置层的改进特性的硬偏置种子层结构的装置公开(公告)号：US07038892B2
公开(公告)日：2006-05-02
申请号：US10674831
申请日：2003-09-30
申请人： Phong V. Chau , James Mac Freitag , Mustafa Michael Pinarbasi , Hua Ai Zeng , Howard Gordon Zolla
发明人： Phong V. Chau , James Mac Freitag , Mustafa Michael Pinarbasi , Hua Ai Zeng , Howard Gordon Zolla
IPC分类号： G11B5/39
CPC分类号： G11B5/3932
摘要： An apparatus having improved hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a layer of silicon and a layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.
摘要翻译： 公开了一种具有改进的磁阻传感器层的硬偏置特性的装置。 使用包括至少一层硅层和包含铬或铬钼的层的种子层结构来改善硬偏置层的性质。 此外，当种子层结构包括一层钽时，实现了益处。
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6.发明授权公开(公告)号：US06972928B2
公开(公告)日：2005-12-06
申请号：US10898799
申请日：2004-07-26
CPC分类号： G11B5/3116 , G11B5/3163 , Y10T29/49032
摘要： An isotropic deposition method for trench narrowing of thin film magnetic write head features to be created by reactive ion etching. According to the method, a photolithographically defined photoresist trench is formed over a hardmask and underlying polymer layer as part of tri-layer resist process. Instead of performing the usual hardmask and polymer etching steps using the photoresist mask pattern, a spacer layer is deposited isotropically or directionally at an angle to cover the vertical side walls of the trench. The spacer layer is etchable by the hardmask etch process but resistant to the polymer etch process. When the hardmask etch process is performed, the spacer layer material applied to the trench side walls remains intact, thereby defining a narrowed trench that is extended by the subsequent base layer etch process.
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7.发明授权公开(公告)号：US06909674B2
公开(公告)日：2005-06-21
申请号：US10460836
申请日：2003-06-11
申请人： Yongho Ju , Michael Salo , Howard Gordon Zolla
发明人： Yongho Ju , Michael Salo , Howard Gordon Zolla
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/02 , G11B5/127 , G11B5/3133 , G11B5/3909 , G11B5/3967 , G11B2005/0005 , G11B2005/0021
摘要： A magnetic head system, and method for manufacturing a magnetic head are provided. Included is at least one layer and a heating element positioned adjacent the at least one layer. The at least one layer includes a plurality of sub-layers for providing an optimal thermal barrier.
摘要翻译： 提供一种磁头系统，以及制造磁头的方法。 包括至少一层和邻近该至少一层定位的加热元件。 至少一层包括用于提供最佳热障的多个子层。
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公开(公告)号：US06862798B2
公开(公告)日：2005-03-08
申请号：US10054621
申请日：2002-01-18
CPC分类号： G11B5/1272 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/4906
摘要： A method of making a magnetic head assembly wherein the magnetic head assembly has a write head with a pole tip includes the steps of forming a shaping layer on an underlying layer wherein the shaping layer has a side surface and a top surface, ion beam sputter depositing a ferromagnetic material layer on the underlying layer and on the side and top surfaces of the shaping layer and removing first and second portions of the ferromagnetic material layer from the underlying layer and the top surface of the shaping layer, respectively, leaving a remaining portion of the ferromagnetic material layer on the side surface of the shaping layer which is the aforementioned pole tip.
摘要翻译： 一种制造磁头组件的方法，其中磁头组件具有带磁极端头的写入头包括以下步骤：在下层上形成成形层，其中成形层具有侧表面和顶表面，离子束溅射沉积 在成形层的下层和侧表面和顶表面上的铁磁材料层，分别从成形层的下层和顶表面去除铁磁材料层的第一和第二部分，留下剩余部分 作为上述极尖的成形层的侧面上的铁磁材料层。
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9.发明授权公开(公告)号：US06842306B2
公开(公告)日：2005-01-11
申请号：US10284988
申请日：2002-10-31
申请人： Marie-Claire Cyrille , Wen-Chien David Hsiao , Yongho Sungtaek Ju , Wen-Yaung Lee , Stefan Maat , Howard Gordon Zolla
发明人： Marie-Claire Cyrille , Wen-Chien David Hsiao , Yongho Sungtaek Ju , Wen-Yaung Lee , Stefan Maat , Howard Gordon Zolla
CPC分类号： G11B5/3906
摘要： A magnetic head has highly thermally conductive insulator materials containing cobalt-oxide so that heat can more effectively dissipate from the magnetic head. In one illustrative example, the magnetic head has first and second gap layers and a read sensor disposed between the first and the second gap layers. The first and the second gap layers are advantageously made of cobalt-oxide (CoOx) (e.g. CoO or Co2O3), which may exhibit a thermal conductivity of between 5-8 watts/meter-Kelvin or greater. In another illustrative example, a magnetic head is made of a substrate; first and second shield layers; an undercoat layer formed between the substrate and the first shield layer; first and second gap layers formed between the first and the second shield layers; and a read sensor formed between the first and the second gap layers. The undercoat layer is also made of CoOx. The improved dissipation of heat from the magnetic head improves the read sensor performance and reduces the likelihood of other problems, such as head-to-disk interface problems.
摘要翻译： 磁头具有含有氧化钴的高导热绝缘体材料，使得热量可以更有效地从磁头中消散。 在一个说明性示例中，磁头具有第一和第二间隙层以及设置在第一间隙层和第二间隙层之间的读取传感器。 第一和第二间隙层有利地由氧化钴（CoO x）（例如CoO或Co 2 O 3）制成，其可以表现出5-8瓦/米 - 开尔文或更高的热导率。 在另一示例性实例中，磁头由衬底制成; 第一和第二屏蔽层; 形成在所述基板和所述第一屏蔽层之间的底涂层; 形成在第一和第二屏蔽层之间的第一和第二间隙层; 以及形成在第一间隙层和第二间隙层之间的读取传感器。 底涂层也由CoOx制成。 来自磁头的热量的改善消耗提高了读取传感器的性能，并降低了其他问题的可能性，例如磁头到磁盘的接口问题。
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公开(公告)号：US07742258B2
公开(公告)日：2010-06-22
申请号：US11707524
申请日：2007-02-12
申请人： Tsung Yuan Chen , David Patrick Druist , Quang Le , Kim Y. Lee , Chun-Ming Wang , Howard Gordon Zolla
发明人： Tsung Yuan Chen , David Patrick Druist , Quang Le , Kim Y. Lee , Chun-Ming Wang , Howard Gordon Zolla
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , Y10T29/49032
摘要： A method for fabricating a magnetic head with a trapezoidal shaped pole piece tip is described. The body of the main pole piece is deposited; then one or more layers for the pole piece tip are deposited. A bed material is deposited over the pole piece tip material. A void is formed in the bed material over the area for the pole piece tip. The void is filled with an ion-milling resistant material such as alumina preferably using atomic layer deposition or atomic layer chemical vapor deposition. The excess ion-milling resistant material and the bed material are removed. The result is an ion-milling mask formed over the area for the pole piece tip. Ion milling is then used to remove the unmasked material in the pole piece tip layer and to form a beveled pole piece tip and preferably a beveled face on the main pole piece.
摘要翻译： 描述了制造具有梯形极片尖端的磁头的方法。 主极片的主体被沉积; 然后沉积用于极片尖端的一个或多个层。 床材料沉积在极片末端材料上。 在用于极片尖端的区域上的床材料中形成空隙。 空隙填充有耐离子碾磨材料，例如氧化铝，优选使用原子层沉积或原子层化学气相沉积。 除去过量的抗离子碾磨材料和床料。 结果是在极片尖端的区域上形成离子铣削掩模。 然后使用离子铣削去除极片末端层中的未掩模材料，并且在主极片上形成斜面极片末端，并且优选地形成斜面。
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