公开(公告)号：US20180166532A1

公开(公告)日：2018-06-14

申请号：US15890320

申请日：2018-02-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Kai Hsu ,  Ssu-I Fu ,  Yu-Hsiang Hung ,  Wei-Chi Cheng ,  Jyh-Shyang Jenq ,  Tsung-Mu Yang

IPC: H01L29/06 ,  H01L21/768 ,  H01L23/535 ,  H01L29/78 ,  H01L29/66

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is formed adjacent to two sides of the gate structure, and an epitaxial layer is formed in the recess, in which a top surface of the epitaxial layer is lower than a top surface of the substrate. Next, a cap layer is formed on the epitaxial layer, in which a top surface of the cap layer is higher than a top surface of the substrate.

公开(公告)号：US20180097110A1

公开(公告)日：2018-04-05

申请号：US15281993

申请日：2016-09-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Mu Yang ,  Kuang-Hsiu Chen ,  Chun-Liang Kuo ,  Tsang-Hsuan Wang ,  Yu-Ming Hsu ,  Fu-Cheng Yen ,  Chung-Min Tsai

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/24 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/267 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7848 ,  H01L21/02057 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method for manufacturing a semiconductor structure comprises the following steps. First, a recess is formed in a substrate. At least one wet cleaning process is performed to the recess and the substrate. Then, a baking process is performed to the recess and the substrate in an atmosphere containing H2 gas. After the baking process, a dry cleaning process is performed the recess and the substrate.

公开(公告)号：US09929234B2

公开(公告)日：2018-03-27

申请号：US15144842

申请日：2016-05-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Kai Hsu ,  Ssu-I Fu ,  Yu-Hsiang Hung ,  Wei-Chi Cheng ,  Jyh-Shyang Jenq ,  Tsung-Mu Yang

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L23/535 ,  H01L21/768

CPC classification number: H01L29/0653 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76895 ,  H01L23/485 ,  H01L23/535 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is formed adjacent to two sides of the gate structure, and an epitaxial layer is formed in the recess, in which a top surface of the epitaxial layer is lower than a top surface of the substrate. Next, a cap layer is formed on the epitaxial layer, in which a top surface of the cap layer is higher than a top surface of the substrate.

公开(公告)号：US20170133460A1

公开(公告)日：2017-05-11

申请号：US14936651

申请日：2015-11-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tien-I Wu ,  I-cheng Hu ,  Yu-Shu Lin ,  Chun-Jen Chen ,  Tsung-Mu Yang ,  Kun-Hsin Chen ,  Neng-Hui Yang ,  Shu-Yen Chan

IPC: H01L29/06 ,  H01L21/3065 ,  H01L29/16 ,  H01L21/283 ,  H01L29/423 ,  H01L21/306 ,  H01L21/225

CPC classification number: H01L21/283 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: The present invention provides a method for forming a semiconductor structure, including: first, a substrate is provided. Next, at least two gate structures are formed on the substrate, each gate structure including two spacers disposed on two sides of the gate structure. Afterwards, a dry etching process is performed to remove parts of the substrate, so as to form a recess in the substrate, and a wet etching process is performed, to etch partial sidewalls of the recess, so as to form at least two tips on two sides of the recess respectively. In addition, parts of the spacer are also removed through the wet etching process, and each spacer includes a rounding corner disposed on a bottom surface of the spacer.