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41.
公开(公告)号:US09073169B2
公开(公告)日:2015-07-07
申请号:US13223159
申请日:2011-08-31
申请人: Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
发明人: Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
IPC分类号: G06F19/00 , H01L21/00 , B24B49/00 , B24B37/005 , B24B37/04 , B24B37/10 , B24B37/30 , B24B49/12 , G01B11/06
CPC分类号: B24B37/005 , B24B37/042 , B24B37/107 , B24B37/30 , B24B49/12 , G01B11/0683
摘要: A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.
摘要翻译: 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间,用原位监测系统监测基底以产生测量序列。 测量被分组成组,每个组与衬底上的多个区域的不同区域相关联。 对于每个区域,基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力,至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。
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公开(公告)号:US20100116990A1
公开(公告)日:2010-05-13
申请号:US12267526
申请日:2008-11-07
申请人: Kun Xu , Feng Q. Liu , Yuchun Wang , Abraham Ravid , Wen-Chiang Tu
发明人: Kun Xu , Feng Q. Liu , Yuchun Wang , Abraham Ravid , Wen-Chiang Tu
CPC分类号: G01B11/0683 , B24B37/005 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要: Methods of determining thickness and phase of a GST layer on a semiconductor substrate are described using intensity spectra within the infra-red range. In particular, techniques for using certain transmission at certain frequencies are disclosed for faster thickness and phase determination in an in-line or standalone metrology/monitoring system for CMP processes.
摘要翻译: 使用在红外范围内的强度光谱来描述确定半导体衬底上的GST层的厚度和相位的方法。 特别地,公开了在某些频率下使用某些传输的技术,用于在用于CMP工艺的在线或独立计量/监测系统中更快的厚度和相位确定。
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