Abstract:
New amines of the formula ##STR1## wherein the radicals R.sup.1, R.sup.2 and R.sup.3 may be any of a variety of groups described below, several methods for preparing them and the use thereof in the treatment of cardiovascular diseases, particularly in blocking cardial and vascular beta-receptors.
Abstract:
Ortho-para-substituted phenoxy-hydroxypropylamines having the general formula ##STR1## and pharmaceutically acceptable, non-toxic acid addition salts thereof, wherein R.sup.1 is alkyl or hydroxy alkyl, R.sup.2 is alkoxyalkyl, alkylthioalkyl, alkoxycarbonylaminoalkyl, or alkoxyalkoxy, and R.sup.3 is halogen, alkyl, alkenyl, alkinyl, alkoxymethyl, or alkoxy are disclosed as are methods for their preparations;Pharmaceutical preparations are prepared whose active ingredients include at least one of the newly discovered phenoxy-hydroxypropylamine compounds. Therapeutically effective doses of these preparations selectively block the .beta.-receptors of the heart making them useful in treating heart diseases in animals including humans.
Abstract:
New amines of the formula ##STR1## wherein the radicals R.sup.1, R.sup.2 and R.sup.3 may be any of a variety of groups described below, several methods for preparing them and the use thereof in the treatment of cardiovascular diseases, particularly in blocking cardial and vascular beta-receptors.
Abstract:
A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
Abstract:
A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.
Abstract:
A method of chemical mechanical polishing a substrate includes polishing a plurality of discrete separated metal features of a layer on the substrate at a polishing station, using an eddy current monitoring system to monitor thickness of the metal features in the layer, and controlling pressures applied by a carrier head to the substrate during polishing of the layer at the polishing station based on thickness measurements of the metal features from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal feature and a target profile.
Abstract:
A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment.
Abstract:
A method of determining a physical property of a substrate includes recording a first spectrum obtained from a substrate, the first spectrum being obtained during a polishing process that alters a physical property of the substrate. The method includes identifying, in a database, at least one of several previously recorded spectra that is similar to the recorded first spectrum. Each of the spectra in the database has a physical property value associated therewith. The method includes generating a signal indicating that a first value of the physical property is associated with the first spectrum, the first value being determined using the physical property value associated with the identified previously recorded spectrum in the database. A system for determining a physical property of a substrate includes a polishing machine, an endpoint determining module, and a database.
Abstract:
A method of determining a physical property of a substrate includes recording a first spectrum obtained from a substrate, the first spectrum being obtained during a polishing process that alters a physical property of the substrate. The method includes identifying, in a database, at least one of several previously recorded spectra that is similar to the recorded first spectrum. Each of the spectra in the database has a physical property value associated therewith. The method includes generating a signal indicating that a first value of the physical property is associated with the first spectrum, the first value being determined using the physical property value associated with the identified previously recorded spectrum in the database. A system for determining a physical property of a substrate includes a polishing machine, an endpoint determining module, and a database.
Abstract:
An apparatus for monitoring the thickness of a conductive layer on a substrate includes a support to hold a substrate having a conductive layer, an eddy current monitoring system including a first plurality of core portions, and a motor to cause relative motion between the support and the eddy current monitoring system such that the substrate moves across the first plurality of core portions in a direction that defines a first axis. At least one core portion is positioned further from a second axis than at least two other core portions. The second axis is orthogonal to the first axis.