公开(公告)号：US08637902B2

公开(公告)日：2014-01-28

申请号：US12907653

申请日：2010-10-19

申请人： Ki Yeol Park ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

发明人： Ki Yeol Park ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/737 ,  H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/66462

摘要： There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.

摘要翻译： 提供了具有允许增强性能的高电子迁移率晶体管（HEMT）结构的半导体器件及其制造方法。 半导体器件包括：基底; 设置在所述基底基板上的半导体层; 源电极，栅电极和漏极，设置在所述半导体层上以彼此间隔开; 以及部分地设置在漏电极和半导体层之间的界面处的欧姆接触层。

公开(公告)号：US20140005797A1

公开(公告)日：2014-01-02

申请号：US13984431

申请日：2012-03-15

申请人： Young Hwan Park ,  Jung Nam Im ,  Tae Hee Kim ,  Jae Hoon Ko ,  Sung Jin Kim

发明人： Young Hwan Park ,  Jung Nam Im ,  Tae Hee Kim ,  Jae Hoon Ko ,  Sung Jin Kim

IPC分类号： A61L27/56 ,  A61L27/58

CPC分类号： A61L27/56 ,  A61L27/18 ,  A61L27/54 ,  A61L27/58 ,  D01F6/625 ,  C08L67/04

摘要： A three-dimensional porous scaffold and a preparation method thereof. The three-dimensional porous scaffold comprises a biodegradable multifilament draw-textured yarn on the inside of a tubular knitted fabric made of a biodegradable polymer. The three-dimensional porous scaffold has a porosity formed by the network mesh structure of the tubular knitted fabric and the 10-150 μm pores formed in the biodegradable multifilament draw-textured yarn, while it has a bulkiness of 150-1000% due to the biodegradable multifilament drawn textured yarn inserted in the tubular knitted fabric. Thus, the scaffold has a high degree of interconnection between pores, so that cell culture, cell delivery or drug delivery on the stable three-dimensional scaffold structure is performed in an optimized manner.

摘要翻译： 一种三维多孔支架及其制备方法。 三维多孔支架包括由可生物降解的聚合物制成的管状针织物的内部的可生物降解的复丝拉伸加工纱线。 三维多孔支架具有通过管状针织物的网状网状结构形成的孔隙和在可生物降解的复丝拉伸变形纱线中形成的10-150个毛孔，而由于其具有150-1000％的蓬松度 可生物降解的复丝拉丝变形丝插入管状针织物中。 因此，支架在孔之间具有高度的互连，使得稳定的三维支架结构上的细胞培养，细胞递送或药物递送以优化的方式进行。

公开(公告)号：USRE44674E1

公开(公告)日：2013-12-31

申请号：US13116077

申请日：2011-05-26

申请人： Na Eun Kim ,  Jin Woong Kim ,  Young Hwan Park ,  Jae Won Chang

发明人： Na Eun Kim ,  Jin Woong Kim ,  Young Hwan Park ,  Jae Won Chang

IPC分类号： D06F37/22

CPC分类号： D06F37/22

摘要： A drum type washing machine is provided, in which vibration is efficiently attenuated, by a maximum capacity within a size-fixed cabinet is provided, and by which a user does not bend over or sit down to load laundry into the washing machine. The drum type washing machine includes a cabinet forming an exterior of the drum type washing machine, a tub fixed within the cabinet, the tub having a laundry loading entrance at an outer circumference of the tub, a drum rotatably provided within the tub, the drum having an opening on a lateral side of the drum to communicate with the laundry loading entrance of the tub, a motor assembly provided next to one side of the drum to rotate the drum, and a suspension assembly provided to support a weight of the drum and attenuate vibration of the drum.

公开(公告)号：US20130146888A1

公开(公告)日：2013-06-13

申请号：US13402692

申请日：2012-02-22

申请人： Young Hwan Park ,  Woo Chul Jeon ,  Ki Yeol Park ,  Seok Yoon Hong

发明人： Young Hwan Park ,  Woo Chul Jeon ,  Ki Yeol Park ,  Seok Yoon Hong

IPC分类号： H01L29/10

CPC分类号： H01L27/088 ,  H01L21/8258 ,  H01L27/0605 ,  H01L29/267 ,  H01L29/778 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a monolithic semiconductor device including: a substrate; a high electron mobility transistor (HEMT) structure that is a first device structure formed on the substrate; and a laterally diffused metal oxide field effect transistor (LDMOSFET) structure that is a second device structure formed to be connected with the HEMT structure on the substrate.The monolithic semiconductor device according to preferred embodiments of the present invention is a device having characteristics of a normally-off device while maintaining high current characteristics in a normally-on state, thereby improving high current and high voltage operation characteristics.

摘要翻译： 本文公开了一种单片半导体器件，包括：衬底; 作为形成在基板上的第一器件结构的高电子迁移率晶体管（HEMT）结构; 以及横向扩散的金属氧化物场效应晶体管（LDMOSFET）结构，其是形成为与衬底上的HEMT结构连接的第二器件结构。根据本发明的优选实施例的单片半导体器件是具有 常闭设备，同时在常开状态下保持高电流特性，从而改善高电流和高电压操作特性。

公开(公告)号：US08384130B2

公开(公告)日：2013-02-26

申请号：US13137291

申请日：2011-08-03

申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

IPC分类号： H01L29/739 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/66431 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.

摘要翻译： 提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 源极与漏极间隔开，与氮化物半导体层肖特基接触，并且具有与内部的氮化物半导体层欧姆接触的欧姆图案; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法 。

公开(公告)号：US08338771B2

公开(公告)日：2012-12-25

申请号：US12940851

申请日：2010-11-05

申请人： Young Hwan Park

发明人： Young Hwan Park

IPC分类号： H01L31/052 ,  G01C21/02

CPC分类号： A01G9/243 ,  F24S30/425 ,  F24S40/20 ,  F24S2030/131 ,  F24S2030/136 ,  F24S2030/14 ,  H02S20/10 ,  H02S20/23 ,  H02S20/32 ,  H02S40/425 ,  Y02A40/266 ,  Y02B10/12 ,  Y02B10/20 ,  Y02E10/47 ,  Y02P60/124

摘要： There is provided an apparatus for tracking and condensing sunlight of a sliding type which tracks a direction of sunlight according to variations of an altitude or orbit of the sun pivots a solar module plate to maximize condensing efficiency, and strengthens a fixing structure on an inclined ground or inclined building surface by suing a frame structure on the bottom without using a concrete base harmful to natural environment.

摘要翻译： 提供了一种用于跟踪和冷凝滑动型太阳光的装置，其根据太阳高度或轨道的变化跟踪太阳光的方向，使太阳能组件板枢转以最大化冷凝效率，并且增强倾斜地面上的固定结构 或倾斜的建筑物表面，通过在底部起吊框架结构，而不使用对自然环境有害的混凝土基础。

公开(公告)号：US08319309B2

公开(公告)日：2012-11-27

申请号：US12654936

申请日：2010-01-08

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L27/095

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/7787

摘要： The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed on the edge regions of the semiconductor layer in such a manner to be disposed to be spaced apart from the first ohmic electrodes, and have a ring shape surrounding the first ohmic electrode; and a Schottky electrode part which is formed on the central region to cover the first ohmic electrode and is formed to be spaced apart from the second ohmic electrode.

摘要翻译： 本发明提供一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有在其中形成的二维电子气体（2DEG）; 设置在所述半导体层的中心区域上的第一欧姆电极; 形成在所述半导体层的边缘区域上的第二欧姆电极，以与所述第一欧姆电极间隔开的方式设置，并且具有环绕所述第一欧姆电极的环形形状; 以及形成在中心区域上以覆盖第一欧姆电极并形成为与第二欧姆电极间隔开的肖特基电极部分。

公开(公告)号：US20120267637A1

公开(公告)日：2012-10-25

申请号：US13137310

申请日：2011-08-04

申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

IPC分类号： H01L29/12 ,  H01L29/778 ,  H01L21/335

CPC分类号： H01L29/7787 ,  H01L29/0607 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/66462

摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a floating guard ring in Schottky contact with the nitride semiconductor layer between the drain electrode and the source electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode wherein the dielectric layer is applied to the floating guard ring between the drain electrode and the source electrode; and a gate electrode formed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.

摘要翻译： 提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，其中源电极与漏电极间隔开; 与漏电极和源电极之间的氮化物半导体层肖特基接触的浮动保护环; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的所述电介质层，其中所述电介质层被施加到所述漏电极和所述源电极之间的所述浮动保护环; 以及形成在与所述漏电极间隔开的所述电介质层上的栅电极，其中，所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且所述栅电极的制造方法 。

公开(公告)号：US20120150205A1

公开(公告)日：2012-06-14

申请号：US13389787

申请日：2010-08-11

申请人： Young Hwan Park ,  Chang Seok Ki ,  Hyun Jeung Kim ,  Sook Young Park

发明人： Young Hwan Park ,  Chang Seok Ki ,  Hyun Jeung Kim ,  Sook Young Park

IPC分类号： A61B17/11 ,  B29C47/00

CPC分类号： A61F2/04 ,  A61L27/3604 ,  A61L27/56 ,  A61L2400/12 ,  A61L2430/32 ,  D01D1/02 ,  D01D1/06 ,  D01D5/003 ,  D01D5/0046 ,  D01D5/0076 ,  D01F4/02

摘要： The present invention relates to a silk nanofiber nerve conduit characterized in that fibroin nanofibers having a diameter of 200 to 400 nm, originated from silk fiber, are stacked layer upon layer to form a porous conduit-shape; and a method for producing thereof, more specifically, to a method for producing a silk nanofiber nerve conduit comprising: (Step 1) preparing a fibrous spinning solution; (Step 2) producing a silk nanofiber of conduit-shape by electrospinning the fibrous spinning solution prepared in step 1 into the cylindrical collecting part coated with polyethyleneoxide; and (Step 3) separating a silk nanofiber of conduit-shape produced in step 2 from the collecting part. The silk nanofiber nerve conduit of the present invention has excellent biocompatibility; allows the body fluid to be exchanged inter in and out of conduit through pores of the conduit, as well; has a proper elasticity, tensile strength, and tear strength. Due to these properties, the silk nanofiber nerve conduit of the present invention helps the regeneration of the nerve injury to recover a motor skill and a sensory function, and thus shows an excellent effect of nerve regeneration. Therefore, the silk nanofiber nerve conduit of the present invention can be used in treating a nerve injury instead of an existing synthetic polymeric nerve conduit.

摘要翻译： 本发明涉及一种丝绸纳米纤维神经管，其特征在于，由丝纤维形成的直径为200〜400nm的丝心蛋白纳米纤维层叠在层上，形成多孔导管状; 及其制造方法，更具体地说，涉及一种丝素纳米纤维神经导管的制造方法，其特征在于，包括：（步骤1）制备纤维纺丝溶液; （步骤2）通过将步骤1中制备的纤维纺丝溶液静电纺丝到涂覆有聚环氧乙烷的圆柱形收集部分中来生产导管形状的丝素纳米纤维; 和（步骤3）将在步骤2中产生的导管形状的丝纳米纤维与收集部分分离。 本发明的丝素纳米纤维神经管具有优异的生物相容性; 允许体液通过导管的孔隙进入和导出; 具有适当的弹性，拉伸强度和撕裂强度。 由于这些特性，本发明的丝纳米纤维神经管有助于神经损伤的再生以恢复运动技能和感觉功能，因此显示出优异的神经再生效果。 因此，本发明的丝纳米纤维神经管可用于治疗神经损伤而不是现有的合成聚合物神经导管。

公开(公告)号：US20120111389A1

公开(公告)日：2012-05-10

申请号：US12940851

申请日：2010-11-05

申请人： Young Hwan Park

发明人： Young Hwan Park

IPC分类号： H01L31/052

CPC分类号： A01G9/243 ,  F24S30/425 ,  F24S40/20 ,  F24S2030/131 ,  F24S2030/136 ,  F24S2030/14 ,  H02S20/10 ,  H02S20/23 ,  H02S20/32 ,  H02S40/425 ,  Y02A40/266 ,  Y02B10/12 ,  Y02B10/20 ,  Y02E10/47 ,  Y02P60/124

摘要： Disclosed is an apparatus for tracking and condensing sunlight of a sliding type which tracks a direction of sunlight according to variations of an altitude or orbit of the sun, pivots a solar module plate to maximize condensing efficiency, and strengthens a fixing structure on an inclined ground or inclined building surface by using a frame structure on the bottom without using a concrete base harmful to natural environment. The apparatus includes: a lower structure; an upper structure which is formed on a top end of the lower structure in the shape of an inverse triangle and has a space portion at the center, a rotation shaft including a bearing being formed on, a top end of which; a solar module plate which condenses sunlight; a rotation plate which pivots in the left-right direction as a central portion of a bottom surface of which is fixed to a top end of the rotation shaft, the solar module plate being formed on a top surface of which; a roller guide which is formed in the space portion at the center of the upper structure along a rotation radius around the rotation shaft; a rotation push rod roller which is formed to be movable with the roller guide; respective rotation push rods which have one ends fixed to both sides of the bottom surface of the rotation plate and the other ends hinge-coupled to the rotation push rod roller; a motor which is formed on the lower structure; a rack pinion which converts a rotational motion of the motor into a linear motion; a driven pipe which is formed on the lower structure and coupled to the rack pinion to perform a linear motion in the left-right direction; and a roller link which has one side hinge-coupled to the driven pipe and the other side hinge-coupled to the rotation push rod roller, and moves the rotation push rod roller along the roller guide in the rotation radius, when the driven pipe moves horizontally. Therefore, the apparatus tracks the direction of sunlight according to variations of the altitude or orbit of the sun, pivots the solar module plate to maximize condensing efficiency, and provides the structure strong against wind or load by firmly fixing the means for fixing and pivoting the solar module plate.