公开(公告)号：US07001707B2

公开(公告)日：2006-02-21

申请号：US10925014

申请日：2004-08-25

申请人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Kazuhiro Yamanaka

发明人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Kazuhiro Yamanaka

IPC分类号： G03F7/004 ,  C08F114/18

CPC分类号： G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/108

摘要： A resist composition comprising a blend of a cyclic polymer having alcoholic groups as soluble groups and a polymer having carboxyl or hexafluoroalcohol groups whose hydrogen atoms are replaced by acid labile groups as a base resin forms a resist film which is improved in transparency, alkali dissolution contrast and plasma etching resistance.

摘要翻译： 包含具有醇基作为可溶性基团的环状聚合物和具有羧酸或六氟醇基团的聚合物的共聚物的抗蚀剂组合物，其氢原子被酸不稳定基团替代为基础树脂形成抗蚀剂膜，其透明度提高，碱溶解对比度 和等离子体耐蚀刻性。

公开(公告)号：US06866983B2

公开(公告)日：2005-03-15

申请号：US10406222

申请日：2003-04-04

申请人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai

发明人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/0395 ,  Y10S430/108

摘要： A resist composition comprising a blend of a polymer comprising recurring units k and m of formula (1) wherein R1 and R2 each are hydrogen or an acid labile group, 0

摘要翻译： 一种抗蚀剂组合物，其包含包含式（1）的重复单元k和m的聚合物的共混物，其中R 1和R 2各自为氢或酸不稳定基团，0

公开(公告)号：US06855477B2

公开(公告)日：2005-02-15

申请号：US10256141

申请日：2002-09-27

申请人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Haruhiko Komoriya ,  Kazuhiko Maeda

发明人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Haruhiko Komoriya ,  Kazuhiko Maeda

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0392

摘要： A chemically amplified resist composition comprising (A) a polymer comprising recurring units containing at least one fluorine atom, (B) a compound of formula (1) wherein R1 and R2 are H, F or alkyl or fluorinated alkyl, at least one of R1 and R2 contains at least one fluorine atom, R3 is a single bond or alkylene, R4 is a n-valent aromatic or cyclic diene group, R5 is H or C(═O)R6, R6 is H or methyl, and n is 2, 3 or 4, (C) an organic solvent, and (D) a photoacid generator is sensitive to high-energy radiation and has improved sensitivity and transparency at a wavelength of less than 200 nm.

摘要翻译： 一种化学放大抗蚀剂组合物，其包含（A）包含含有至少一个氟原子的重复单元的聚合物，（B）式（1）的化合物，其中R 1和R 2为H，F或烷基或氟化烷基 ，R 1和R 2中的至少一个含有至少一个氟原子，R 3是单键或亚烷基，R 4是n价的芳族或环状二烯基，R 5 >为H或C（= O）R 6，R 6为H或甲基，n为2,3或4，（C）有机溶剂，（D）光致酸发生剂对高 能量辐射，并且在小于200nm的波长下具有改善的灵敏度和透明度。

公开(公告)号：US06511787B2

公开(公告)日：2003-01-28

申请号：US09947764

申请日：2001-09-07

申请人： Yuji Harada ,  Jun Hatakeyama ,  Jun Watanabe ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Satoru Miyazawa ,  Kentaro Tsutsumi ,  Kazuhiko Maeda

发明人： Yuji Harada ,  Jun Hatakeyama ,  Jun Watanabe ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Satoru Miyazawa ,  Kentaro Tsutsumi ,  Kazuhiko Maeda

IPC分类号： G03F7004

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  Y10S430/108 ,  Y10S430/111

摘要： An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.

公开(公告)号：US06461791B1

公开(公告)日：2002-10-08

申请号：US09686955

申请日：2000-10-12

申请人： Jun Hatakeyama ,  Yuji Harada ,  Jun Watanabe ,  Mutsuo Nakashima

发明人： Jun Hatakeyama ,  Yuji Harada ,  Jun Watanabe ,  Mutsuo Nakashima

IPC分类号： G03F7039

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382

摘要： Polymers of a fluorinated backbone having recurring units of formula (1) are novel: R1 is H, F, C1-20 alkyl or fluorinated C1-20 alkyl, R2 is F, C1-20 alkyl or fluorinated C1-20 alkyl, and R3 is C6-20 aryl which may have attached thereto a hydroxyl group and/or a hydroxyl group substituted with an OR4 group wherein R4 is an acid labile group. Using such polymers, resist compositions featuring transparency to excimer laser light and alkali solubility are obtained.

摘要翻译： 具有式（1）重复单元的氟化主链的聚合物是新颖的：R1是H，F，C1-20烷基或氟化C1-20烷基，R2是F，C1-20烷基或氟化C1-20烷基，R3 是可以与其连接羟基和/或被OR4基团取代的羟基的C6-20芳基，其中R4是酸不稳定基团。 使用这种聚合物，获得具有对准分子激光的透明度和碱溶性的抗蚀剂组合物。

公开(公告)号：US06369279B1

公开(公告)日：2002-04-09

申请号：US09657515

申请日：2000-09-07

申请人： Mutsuo Nakashima ,  Jun Hatakeyama ,  Jun Watanabe ,  Yuji Harada

发明人： Mutsuo Nakashima ,  Jun Hatakeyama ,  Jun Watanabe ,  Yuji Harada

IPC分类号： C07C4312

CPC分类号： C07C69/017 ,  C07C43/225 ,  C07C43/313 ,  C07C69/712 ,  C07C69/96 ,  C07F7/1804 ,  Y02P20/55

摘要： Styrene derivatives of formula (1) are novel wherein R1 is hydrogen, C1-20 alkyl, fluoro-substituted C1-20 alkyl, chloro, or trichloromethyl, R2 is a phenol protecting group, p, q and r are integers in the range of 0≦p

摘要翻译： 式（1）的苯乙烯衍生物是新的，其中R 1是氢，C 1-20烷基，氟取代的C 1-20烷基，氯或三氯甲基，R 2是苯酚保护基，p，q和r是在 0 <= p <5,0 <= q <5,0

公开(公告)号：US20120249995A1

公开(公告)日：2012-10-04

申请号：US13494746

申请日：2012-06-12

申请人： Jun Hatakeyama ,  Yuji Harada ,  Takeru Watanabe

发明人： Jun Hatakeyama ,  Yuji Harada ,  Takeru Watanabe

IPC分类号： G03B27/32

CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041

摘要： The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit.

摘要翻译： 本发明是用于浸没式光刻的保护膜材料，其能够进行希望的浸渍光刻，可以与光致抗蚀剂层的显影同时除去，并且具有优异的工艺适应性。 本发明还包括使用该材料形成图案的方法。 更具体地说，本发明是一种保护膜材料，其包含（i）包含具有含有至少一个氟原子的含氟烷基或亚烷基的重复单元和任选的碱可溶重复单元的聚合物的共混物和包含 具有无氟烷基和任选的碱可溶重复单元的重复单元，或（ii）含有含有至少一个氟原子的含氟烷基或亚烷基的重复单元的聚合物和具有至少一个氟原子的重复单元 无氟烷基和任选的碱溶性重复单元。

公开(公告)号：US07666967B2

公开(公告)日：2010-02-23

申请号：US11606069

申请日：2006-11-30

申请人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Michitaka Ootani

发明人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Michitaka Ootani

IPC分类号： C08F214/18

CPC分类号： C07D307/93 ,  C07D409/12 ,  G03F7/0046 ,  G03F7/0397

摘要： A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.

摘要翻译： 使用包含通过聚合式（1）的酯化合物获得的重复单元（2）的聚合物来形成抗蚀剂组合物。 R 1是F或C 1 -C 6氟代烷基，R 2是H或C 1 -C 8烷基，R 3是O或C 1 -C 6亚烷基，R 4和R 5各自是H或C 1 -C 10烷基或氟代烷基，R 6是H或酸不稳定基团 。 当通过ArF光刻处理时，抗蚀剂组合物具有改进的分辨率，透明度，最小的线边缘粗糙度和耐蚀刻性的优点。 当通过ArF浸没式光刻法处理介于投影透镜和晶片之间的液体时，抗蚀剂组合物表现出更好的性能。

公开(公告)号：US20090197200A1

公开(公告)日：2009-08-06

申请号：US12320183

申请日：2009-01-21

申请人： Jun Hatakeyama ,  Yuji Harada

发明人： Jun Hatakeyama ,  Yuji Harada

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： The present invention relates to a resist top coat composition and a patterning process adopting such a material, which resist top coat composition is provided for forming a top coat on a photoresist film so as to protect the photoresist film, in liguid immersion photolithography. The present invention provides a resist top coat composition for forming a top coat on a photoresist film, wherein the resist top coat composition comprises, at least: a polymer I including a repeating unit a represented by the following general formula (1); and a polymer II including repeating unit having a sulfonic acid or an amine salt of a sulfonic acid:

摘要翻译： 本发明涉及一种抗蚀剂面漆组合物和采用这种材料的图案化方法，其抗蚀面漆组合物用于在光致抗蚀剂膜上形成顶涂层以保护光致抗蚀剂膜，在液体浸渍光刻中。 本发明提供了一种用于在光致抗蚀剂膜上形成顶涂层的抗蚀剂面漆组合物，其中抗蚀剂面漆组合物至少包含：包含由以下通式（1）表示的重复单元的聚合物I; 和包含具有磺酸或磺酸胺盐的重复单元的聚合物II：

公开(公告)号：US07488567B2

公开(公告)日：2009-02-10

申请号：US11440126

申请日：2006-05-25

申请人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Michitaka Ootani

发明人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Michitaka Ootani

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0046 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： A polymer comprising recurring units of formula (1) wherein R1 is F or fluoroalkyl, R2 is alkylene or fluoroalkylene, and R3 is an acid labile group and having a Mw of 1,000-500,000 is used to formulate a resist composition, which is processed by the lithography involving ArF exposure and offers many advantages including resolution, minimal line edge roughness, etch resistance, and minimal surface roughness after etching. The composition performs well when processed by the ArF immersion lithography with liquid interposed between the projection lens and the wafer.

摘要翻译： 一种包含式（1）的重复单元的聚合物，其中R1是F或氟代烷基，R2是亚烷基或氟代亚烷基，R3是酸不稳定基团，Mw为1,000-500,000，用于配制抗蚀剂组合物， 涉及ArF曝光的光刻技术提供许多优点，包括分辨率，最小线边缘粗糙度，耐蚀刻性和蚀刻后的最小表面粗糙度。 当通过ArF浸没式光刻法处理介于投影透镜和晶片之间的液体时，组合物表现良好。