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公开(公告)号：US06790586B2
公开(公告)日：2004-09-14
申请号：US09947504
申请日：2001-09-07
申请人： Jun Hatakeyama , Yuji Harada , Jun Watanabe , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人： Jun Hatakeyama , Yuji Harada , Jun Watanabe , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
IPC分类号： G03F7038
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/108
摘要： A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F2 excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.
摘要翻译： 一种抗蚀剂组合物，其包含（A）包含具有脂环族烃主链的重复单元的聚合物，当在酸性条件下分解时，能够产生羧酸的羧酸酯部分通过C1-C20亚烷基间隔基，（B）光致酸产生剂和 （C）有机溶剂对高能辐射敏感，并且在低于180nm的波长下具有优异的灵敏度和分辨率，以及良好的等离子体耐蚀刻性。 由于本发明抗蚀剂组合物的这些特征使得其能够特别用作F2准分子激光器的曝光波长处的抗蚀剂，因此可以容易地形成精细限定的图案，使得抗蚀剂在VLSI制造中理想为微图案材料。
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公开(公告)号：US06511787B2
公开(公告)日：2003-01-28
申请号：US09947764
申请日：2001-09-07
申请人： Yuji Harada , Jun Hatakeyama , Jun Watanabe , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人： Yuji Harada , Jun Hatakeyama , Jun Watanabe , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0392 , G03F7/0395 , Y10S430/108 , Y10S430/111
摘要： An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.
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公开(公告)号：US06861197B2
公开(公告)日：2005-03-01
申请号：US10084828
申请日：2002-02-28
申请人： Yuji Harada , Jun Watanabe , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人： Yuji Harada , Jun Watanabe , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
IPC分类号： C08F220/22 , G03F7/004 , G03F7/039
CPC分类号： C08F220/22 , G03F7/0046 , G03F7/0397 , Y10S430/108 , Y10S430/126 , Y10S430/168
摘要： A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.
摘要翻译： 提供了具有含有氟化脂环族单元的酯基的基础聚合物。 包含聚合物的抗蚀剂组合物对高能量辐射敏感，并且在小于200nm的波长下具有优异的灵敏度，由于所掺入的氟化脂环族单元以及令人满意的等离子体耐蚀刻性而显着提高了透明度。 抗蚀剂组合物在F2激光的曝光波长处具有低吸收，并且在VLSI制造中是理想的微图案材料。
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公开(公告)号：US06582880B2
公开(公告)日：2003-06-24
申请号：US09947765
申请日：2001-09-07
申请人： Yuji Harada , Jun Watanabe , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人： Yuji Harada , Jun Watanabe , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , C08F220/22 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： An acrylate resin containing fluorinated alkyl groups in ester side chains has high transmittance to VUV radiation. A resist composition using the resin as a base polymer is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for lithographic microprocessing.
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公开(公告)号：US06710148B2
公开(公告)日：2004-03-23
申请号：US10068298
申请日：2002-02-08
申请人： Yuji Harada , Jun Hatakeyama , Jun Watanabe , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人： Yuji Harada , Jun Hatakeyama , Jun Watanabe , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
IPC分类号： C08F11800
CPC分类号： G03F7/0395 , C08F232/08 , G03F7/0046 , G03F7/0397
摘要： A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.
摘要翻译： 在α-位含氟的丙烯酸酯单体与降冰片烯衍生物的共聚物对VUV辐射是高度透明的并且耐干蚀刻。 使用树脂作为基础聚合物的抗蚀剂组合物对于低于200nm的高能辐射敏感，具有优异的灵敏度，并且适用于光刻微处理。
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公开(公告)号：US06864037B2
公开(公告)日：2005-03-08
申请号：US10178237
申请日：2002-06-25
申请人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
CPC分类号： G03F7/0395 , Y10S430/108 , Y10S430/111
摘要： A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.
摘要翻译： 具有至少一个C6-20脂环结构的丙烯酸单体与降冰片烯衍生物或具有六氟醇侧基的苯乙烯单体的共聚物对VUV辐射是高度透明的，并且耐等离子体蚀刻。 使用聚合物作为基础树脂的抗蚀剂组合物对于低于200nm的高能辐射敏感，具有优异的灵敏度，透明度和耐干蚀刻性，并且适用于光刻微处理。
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公开(公告)号：US07005228B2
公开(公告)日：2006-02-28
申请号：US10178638
申请日：2002-06-25
申请人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A ternary copolymer comprising units of α-trifluoromethylacrylic carboxylate having acid labile groups substituted thereon, units of α-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.
摘要翻译： 包含其上取代有酸不稳定基团的α-三氟甲基丙烯酸羧酸酯单元的三元共聚物，其上取代有粘合剂基团的α-三氟甲基丙烯酸羧酸酯单元和具有六氟醇垂饰的苯乙烯单元对VUV辐射是高度透明的并且耐等离子体蚀刻。 使用聚合物作为基础树脂的抗蚀剂组合物对于低于200nm的高能辐射敏感，具有优异的灵敏度，并且适用于光刻微处理。
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公开(公告)号：US06933095B2
公开(公告)日：2005-08-23
申请号：US10178475
申请日：2002-06-25
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
IPC分类号： G03F7/032 , C08F212/14 , C08F220/04 , C08F220/22 , G03F7/004 , G03F7/039 , G03F7/38 , H01L21/027
CPC分类号： G03F7/0046 , C08F212/14 , G03F7/0392 , Y10S430/108 , Y10S430/146 , Y10S430/167
摘要： A copolymer of an acrylate monomer containing fluorine at α-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.
摘要翻译： 在α-位含氟的丙烯酸酯单体与氟化羟基苯乙烯衍生物的共聚物对VUV辐射是高度透明的并且耐等离子体蚀刻。 使用聚合物作为基础树脂的抗蚀剂组合物对于低于200nm的高能辐射敏感，具有优异的灵敏度，分辨率，透明度，基底粘附性和等离子体耐蚀刻性，并且适用于光刻微处理。
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公开(公告)号：US06946235B2
公开(公告)日：2005-09-20
申请号：US10636692
申请日：2003-08-08
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Michitaka Ootani , Haruhiko Komoriya
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Michitaka Ootani , Haruhiko Komoriya
IPC分类号： C08F28/02 , C08F212/14 , C08F220/12 , C08F232/00 , G03F7/004 , G03F7/039 , H01L21/027 , G03C1/492
CPC分类号： C08F28/02 , G03F7/0046 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
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公开(公告)号：US06916592B2
公开(公告)日：2005-07-12
申请号：US10395268
申请日：2003-03-25
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Michitaka Ootani , Haruhiko Komoriya
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Michitaka Ootani , Haruhiko Komoriya
IPC分类号： C07C309/67 , G03F7/004 , G03F7/039 , C08F12/30 , C08F114/18 , G03F7/30 , G03F7/38
CPC分类号： C07C309/67 , C07C2603/68 , G03F7/0046 , G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A resist composition comprising a base polymer having a fluorinated sulfonate or fluorinated sulfone introduced therein is sensitive to high-energy radiation, has excellent transparency, contrast and adherence, and is suited for lithographic microprocessing.
摘要翻译： 包含其中引入氟化磺酸盐或氟化砜的基础聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的透明度，对比度和粘附性，并且适用于光刻微处理。
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