Abstract:
A solid-state imaging element includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line.
Abstract:
A solid-state imaging device includes a pixel array unit in which unit pixels are arranged in a matrix shape and a signal processing circuit that obtains a first video signal and performs processing for combining the first and second video signals. The signal processing circuit includes judging means that judges whether a pixel of interest in the pixel array unit is a pixel to be saturated during an exposure period, calculating means that sets the pixel of interest as a correction pixel and calculates a correction amount on the basis of a luminance value of the second video signal of a peripheral pixel of the correction pixel, and correcting means that applies the correction amount to a luminance value of the first video signal of the correction pixel to thereby correct a noise signal amount due to photo-charges leaking from the peripheral pixel into the correction pixel.
Abstract:
Disclosed herein is a solid-state imaging element including: a plurality of unit pixels each having a photoelectric conversion part, a transfer part that transfers a charge generated by the photoelectric conversion part to a predetermined region, and a draining part that drains a charge in the predetermined region; a light shielding film being formed under an interconnect layer in the unit pixels and shield, from light, substantially the whole surface of the plurality of unit pixels except a light receiving part of the photoelectric conversion part; and a voltage controller controlling a voltage applied to the light shielding film. The voltage controller sets the voltage applied to the light shielding film to a first voltage in charge draining by the draining part and sets the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part.
Abstract:
A solid-state imaging device includes: a unit pixel including a photoelectric conversion section, an impurity-diffusion region capable of temporarily accumulating or holding electric charges generated by the photoelectric conversion section, and a reset transistor resetting the impurity-diffusion region by a voltage of a voltage-supply line, and having an impurity concentration such that at least the reset transistor side of the impurity-diffusion region becomes a depletion state; and a drive circuit changing the voltage of the voltage-supply line from a first voltage lower than a depletion potential of the reset transistor side of the impurity-diffusion region to a second voltage higher than the depletion potential while the reset transistor is on.
Abstract:
A solid-state imaging device includes: a pixel array unit having arranged unit pixels, each having a charge generator generating signal charges, and a signal output unit having a charge transfer unit, and generating and outputting a processing-target signal corresponding to the signal charges; a driving controller driving the unit pixels, the driving controller sequentially driving the charge transfer unit; and a transfer driving voltage setting unit setting, on the basis of a pixel signal based on a saturated charge amount of the charge generator and a pixel signal based on an intermediate voltage retained charge amount retained in the charge generator after intermediate transfer in which charge transfer is performed at a level between a complete transfer level and an off level, the level of the intermediate voltage such that an actual intermediate voltage retained charge amount becomes the expectation value of the intermediate voltage retained charge amount.
Abstract:
Disclosed herein is a solid-state imaging element including: a plurality of unit pixels each having a photoelectric conversion part, a transfer part that transfers a charge generated by the photoelectric conversion part to a predetermined region, and a draining part that drains a charge in the predetermined region; a light shielding film being formed under an interconnect layer in the unit pixels and shield, from light, substantially the whole surface of the plurality of unit pixels except a light receiving part of the photoelectric conversion part; and a voltage controller controlling a voltage applied to the light shielding film. The voltage controller sets the voltage applied to the light shielding film to a first voltage in charge draining by the draining part and sets the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part.
Abstract:
An image processing apparatus includes the following elements. An image input unit receives a long-time exposure image and a short-time exposure image. An image analysis unit detects a brightness-change pixel in which a brightness change has occurred during a photographic period on the basis of analysis of pixel values in the long-time exposure image and the short-time exposure image. A pixel value correction unit corrects a pixel value of the detected brightness-change pixel. In the pixel value correction unit, a combined image generator selectively combines pixel values in the long-time exposure image and pixel values in the short-time exposure image to generate a combined image; an intermediate image generator generates a blurred image of the combined image; and an output image generator determines a pixel value of the detected brightness-change pixel using a pixel value of a corresponding pixel in each of the combined image and the blurred image.
Abstract:
A solid-state imaging element includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line.
Abstract:
Disclosed herein is a solid-state imaging device employing a plurality of unit pixels each having an opto-electric conversion section configured to convert incident light into electric charge and an electric-charge holding section configured to hold a signal voltage representing the electric charge produced by the opto-electric conversion section, the solid-state imaging device further including a read section and a control section.
Abstract:
A solid-state imaging device, includes: a pixel array area including an unit pixel having a photoelectric conversion element and a transfer gate; a first supply voltage control means for supplying a first control voltage to a control electrode of the transfer gate; a second supply voltage control means for sequentially supplying one or plural second control voltages having a voltage value different from the first control voltage to the control electrode; a third supply voltage control means for supplying a third control voltage having the same voltage value as the second control voltages once or plural times prior to one or plural supplies of the second control voltages; a first driving means for reading signal charges from the transfer gate when the first control voltage is supplied; and a second driving means for reading signal charges from the transfer gate once and more when the second control voltage is sequentially applied.