公开(公告)号：US20190173466A1

公开(公告)日：2019-06-06

申请号：US15829638

申请日：2017-12-01

Applicant: pSemi Corporation

Inventor： Ethan Prevost ,  Dylan J. Kelly ,  Kevin Roberts ,  Edward Nicholas Comfoltey

IPC: H03K17/693

Abstract: Methods and devices taught in the present disclosure address the need for reconfigurable multi-pole multi-throw switches for various RF applications having different design requirements. Such reconfigurable switches can be reused for different applications without having to go through long research, development and manufacturing cycles. Design of multi-pole multiple switches with improved performance metric such as insertion loss, parasitic capacitance and bandwidth is also made possible using the teachings of the disclosure.

公开(公告)号：US10153763B2

公开(公告)日：2018-12-11

申请号：US15707970

申请日：2017-09-18

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Mark L. Burgener

IPC: H01L29/66 ,  H03K17/16 ,  H03K17/687 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US20180212599A1

公开(公告)日：2018-07-26

申请号：US15826453

申请日：2017-11-29

Applicant: pSemi Corporation

Inventor： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

IPC: H03K17/16 ,  H03K17/284 ,  H03K17/10 ,  H03K17/687 ,  H03K17/689 ,  H03K17/04 ,  H03K17/08 ,  H03K17/06

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.