Abstract:
A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.
Abstract:
A display having hot electron type electron sources displaying an image by a line sequential scanning scheme can prevent poor brightness uniformity along scan lines. A top electrode bus line of a hot electron type electron source is a scan line and a bottom electrode thereof is a data line. The top electrode bus line has a sheet resistance lower than that of the bottom electrode. The wire sheet resistance of the scam line can be reduced to several m/square. When forming a 40 inch large screen FED using the hot electron type electron sources, a voltage drop amount produced in the scan line can be suppressed below an allowable range. A high quality image without poor brightness uniformity can be obtained.
Abstract:
An electron emitting device includes a first electrode located on a substrate, an insulating layer located on the first electrode, and a second electrode located on the insulating layer. The second electrode has a first surface and a second surface, which are substantially vertical to a direction that the first electrode and the insulating layer are laminated. The first surface of the second electrode is in contact with the insulating layer. A higher potential than that applied to the second electrode is applied to the first electrode to emit an electron from the second surface.
Abstract:
Disclosed is a display device with improved brightness achieved by increasing electron emission efficiency of a thin film cathode. Phosphors are irradiated with electrons emitted to a vacuum through a flat thin film which is thinner than 5 nm and is disposed so as to face the phosphors. A top electrode for emitting the electrons is formed by stacking thin films of Ir, Pt, and Au, and performing a heat treatment so as to reconstruct the top electrode to have a structure in which thick island parts and a flat thin film part mixedly exist.
Abstract:
An emitter has a rapid thermal process (RTP) formed emission layer of SiO2, SiOxNy or combinations thereof. The emission layer formed by rapid thermal processing does not require electroforming to stabilize the film. The RTP grown films are stable and exhibit uniform characteristics from device to device.
Abstract translation:发射体具有形成SiO 2,SiO x N y或其组合的快速热处理(RTP)发射层。 通过快速热处理形成的发射层不需要电铸来稳定膜。 RTP生长的膜是稳定的并且从器件到器件表现出均匀的特性。
Abstract:
An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.
Abstract:
The invention realizes a display device that uses thin film cathodes having no contamination of a top electrode and no damage of an electron acceleration layer due to photo process and having no contact failure of the top electrode of the thin film cathode array due to oxidation or breakage of the bus electrode in the frit glass process that is carried out when a panel is manufactured to bring about the high reliability of the wiring connection of the top electrode. To realize the display device, the invention provides a display device having a substrate comprising a base electrode, a top electrode, and an electron acceleration layer disposed between the base electrode and the top electrode, which substrate is formed of arrayed thin film cathodes that emit electrons from the top electrode side by applying a voltage between the base electrode and the top electrode, and a phosphor screen. The arrayed thin film cathodes have a top bus electrode served as a current feed line to the top electrode, which top bus electrode is tapered so that the film thickness decreases toward an electron emission portion side, and have an overhang structure that separates the top electrode into individual cathodes.
Abstract:
In a field emission-type electron source (10), lower electrodes (8) made of an electroconductive layer, a strong field drift layer (6) including drift portions (6a) made of an oxidized or nitrided porous semiconductor, and surface electrodes (7) made of a metal layer are provided on an upper side of a dielectric substrate (11) made of glass. When voltage is applied to cause the surface electrodes (7) to be anodic with respect to the lower electrodes (8), electrons injected from the lower electrodes (8) to the strong field drift layer (6) are led to drift through the strong field drift layer (6) and are emitted outside through the surface electrodes (7). A pn-junction semiconductor layer composed of an n-layer (21) and a p-layer (22) is provided between the lower electrode (8) and the strong field drift layer (6) to prevent a leakage current from flowing to the surface electrode (7) from the lower electrode (8), thereby reducing amount of power consumption.
Abstract:
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
Abstract:
An electron emitting device includes a first electrode located on a substrate, an insulating layer located on the first electrode, and a second electrode located on the insulating layer. The second electrode has a first surface and a second surface, which are substantially vertical to a direction that the first electrode and the insulating layer are laminated. The first surface of the second electrode is in contact with the insulating layer. A higher potential than that applied to the second electrode is applied to the first electrode to emit an electron from the second surface.