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公开(公告)号：US07049158B2
公开(公告)日：2006-05-23
申请号：US10688731
申请日：2003-10-15
IPC分类号： H01L21/00
摘要： A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.
摘要翻译： 公开了一种用于产生具有平坦的阴极发射表面的发射体的方法：首先在平坦的阴极发射表面上形成导电的保护层。 然后在保护层上形成电子透镜结构。 最后，蚀刻保护层以暴露平坦的阴极发射表面。
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公开(公告)号：US07044823B2
公开(公告)日：2006-05-16
申请号：US10848695
申请日：2004-05-18
申请人： Zhizhang Chen , Michael J. Regan , Brian E Bolf , Thomas Novet , Paul J. Benning , Mark Alan Johnstone , Sriram Ramamoorthi
发明人： Zhizhang Chen , Michael J. Regan , Brian E Bolf , Thomas Novet , Paul J. Benning , Mark Alan Johnstone , Sriram Ramamoorthi
摘要： An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译： 发射体具有形成在电子供给层上的电子供给层和隧道层。 可选地，在电子供给层上形成绝缘体层，并且在其内形成有形成有隧道层的开口。 在隧道层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。
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公开(公告)号：US06933517B2
公开(公告)日：2005-08-23
申请号：US10686965
申请日：2003-10-15
摘要： An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.
摘要翻译： 发射极包括电子源和设置在电子源上的隧穿层。 阴极层设置在隧道层上。 导电电极具有多层导电材料。 多层包括设置在阴极层上的保护层。 已经蚀刻导电电极以限定开口，从而暴露阴极层的一部分。
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公开(公告)号：US06781146B2
公开(公告)日：2004-08-24
申请号：US09846127
申请日：2001-04-30
申请人： Zhizhang Chen , Michael J. Regan , Brian E Bolf , Thomas Novet , Paul J. Benning , Mark Alan Johnstone , Sriram Ramamoorthi
发明人： Zhizhang Chen , Michael J. Regan , Brian E Bolf , Thomas Novet , Paul J. Benning , Mark Alan Johnstone , Sriram Ramamoorthi
IPC分类号： H01L2906
摘要： An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译： 发射体具有形成在电子供给层上的电子供给层和隧道层。 可选地，在电子供应层上形成绝缘体层，并且具有限定在其中形成隧道层的开口。 在隧道层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。
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公开(公告)号：US06703252B2
公开(公告)日：2004-03-09
申请号：US10066149
申请日：2002-01-31
IPC分类号： H01L2166
摘要： A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.
摘要翻译： 公开了一种用于产生具有平坦的阴极发射表面的发射体的方法：首先在平坦的阴极发射表面上形成导电的保护层。 然后在保护层上形成电子透镜结构。 最后，蚀刻保护层以暴露平坦的阴极发射表面。
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公开(公告)号：US06753544B2
公开(公告)日：2004-06-22
申请号：US09846047
申请日：2001-04-30
申请人： Zhizhang Chen , Michael David Bice , Ronald L. Enck , Michael J. Regan , Thomas Novet , Paul J. Benning
发明人： Zhizhang Chen , Michael David Bice , Ronald L. Enck , Michael J. Regan , Thomas Novet , Paul J. Benning
IPC分类号： H01L2906
摘要： An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译： 发射体具有形成在电子供给层上的电子供给层和硅基电介质层。 硅基电介质层优选小于约500埃。 可选地，在电子供给层上形成绝缘体层，并且限定了形成硅基电介质层的开口。 在硅基电介质层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。
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公开(公告)号：US06902458B2
公开(公告)日：2005-06-07
申请号：US10755890
申请日：2004-01-12
申请人： Zhizhang Chen , Michael David Bic , Ronald L. Enck , Michael J. Regan , Thomas Novet , Paul J. Benning
发明人： Zhizhang Chen , Michael David Bic , Ronald L. Enck , Michael J. Regan , Thomas Novet , Paul J. Benning
IPC分类号： G11C13/04 , H01J1/312 , H01J9/02 , H01J19/24 , H01J21/06 , H01J29/04 , H01J31/12 , H01L29/06 , H01J9/04
摘要： An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译： 发射体具有形成在电子供给层上的电子供给层和硅基电介质层。 硅基电介质层优选小于约500埃。 可选地，在电子供给层上形成绝缘体层，并且限定了形成硅基电介质层的开口。 在硅基电介质层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。
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公开(公告)号：US06783418B2
公开(公告)日：2004-08-31
申请号：US10758801
申请日：2004-01-15
申请人： Thomas Novet , David M. Schut
发明人： Thomas Novet , David M. Schut
IPC分类号： H01J924
CPC分类号： B82Y10/00 , H01J1/308 , H01J1/312 , Y10S977/939
摘要： An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semiconductor material within the cage of the zeolite.
摘要翻译： 发射体包括电子供应层，电子供应层上限定发射区的电介质层，以及在限定的发射区内并与电子供应层接触的填充的沸石发射层。 填充的沸石发射层将半导体材料保持在沸石的保持架内。
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公开(公告)号：US07149155B2
公开(公告)日：2006-12-12
申请号：US10251568
申请日：2002-09-20
IPC分类号： G11B11/00
CPC分类号： H01L27/24 , G11C13/0004 , G11C13/0009
摘要： A re-recordable data storage medium is disclosed. One embodiment of the medium includes a dielectric material and a filler material. The dielectric material is organized in columnar channels over which memory cells are logically distributed. The filler material is within the columnar channels to realize the memory cells. The filler material of each memory cell has at least a first configuration and a second configuration. The first configuration corresponds to a first storable logical value, and the second configuration corresponds to a second storable logical value.
摘要翻译： 公开了可重新记录的数据存储介质。 介质的一个实施例包括电介质材料和填充材料。 介电材料组织在柱状通道上，存储器单元在其上逻辑分布。 填充材料在柱状通道内以实现存储单元。 每个存储单元的填充材料至少具有第一配置和第二配置。 第一配置对应于第一可存储逻辑值，第二配置对应于第二可存储逻辑值。
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公开(公告)号：US08573741B2
公开(公告)日：2013-11-05
申请号：US12609626
申请日：2009-10-30
申请人： Alok Sharan , Thomas Novet , Daniel W. Petersen , John Breen
发明人： Alok Sharan , Thomas Novet , Daniel W. Petersen , John Breen
CPC分类号： B41J2/14 , B41J2/16 , B41J2/1623 , B41J2/1632 , B41J2/1637 , B41J2002/14362
摘要： A fluid-ejection assembly includes a die, a substrate, ribs, and adhesive. The die has nozzles through which fluid is ejected. The substrate provides the fluid to the die. The ribs are within the substrate, and have rounded corners. The rounded corners are adapted to provide a predetermined characteristic. The adhesive affixes the die to the substrate.
摘要翻译： 流体喷射组件包括模具，基底，肋和粘合剂。 模具具有喷嘴，流体被喷射通过喷嘴。 基板将流体提供给模具。 肋条在基片内，并有圆角。 圆角适于提供预定特性。 粘合剂将模具固定到基底上。
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