Stacked organic memory devices and methods of operating and fabricating
    42.
    发明授权
    Stacked organic memory devices and methods of operating and fabricating 有权
    堆叠有机存储器件及其操作和制造方法

    公开(公告)号:US08003436B2

    公开(公告)日:2011-08-23

    申请号:US12327040

    申请日:2008-12-03

    IPC分类号: H01L51/00

    摘要: The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.

    摘要翻译: 本发明提供一种多层有机存储器件,其可以作为其中构造有多个堆叠和/或并行存储器结构的非易失性存储器件来操作。 可以在两个或多个电极之间形成多单元和多层有机存储器组件,所述两个或更多个电极在形成各个单元的电极之间具有选择性导电介质,同时利用分隔组件使得能够堆叠额外的存储器单元, 以前形成的细胞。 可以通过添加额外的层 - 通过附加分隔部件分开的相应层来形成存储器堆叠,其中可以并行形成多个堆叠以提供高密度存储器件。

    Memory cell containing copolymer containing diarylacetylene portion
    43.
    发明授权
    Memory cell containing copolymer containing diarylacetylene portion 有权
    含有二芳基乙炔部分的含有记忆体的共聚物

    公开(公告)号:US07777218B1

    公开(公告)日:2010-08-17

    申请号:US11462525

    申请日:2006-08-04

    IPC分类号: H01L35/24 H01L51/00

    摘要: An organic memory cell containing an organic semiconductor layer containing a copolymer is disclosed. The copolymer contains a diarylacetylene portion and at least one of an arylacetylene portion and a heterocyclic acetylene portion. The copolymer may be a random copolymer, an alternating copolymer, a random block copolymer, or a block copolymer. Methods of making an organic memory devices/cells containing the copolymer, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.

    摘要翻译: 公开了含有共聚物的有机半导体层的有机存储单元。 共聚物含有二芳基乙炔部分和芳基乙炔部分和杂环乙炔部分中的至少一个。 共聚物可以是无规共聚物,交替共聚物,无规嵌段共聚物或嵌段共聚物。 还公开了制备含共聚物的有机存储器件/电池的方法,使用有机存储器件/电池的方法,以及诸如包含有机存储器件/电池的计算机的器件。

    Vertical structure thin film transistor
    44.
    发明授权
    Vertical structure thin film transistor 失效
    垂直结构薄膜晶体管

    公开(公告)号:US07768013B2

    公开(公告)日:2010-08-03

    申请号:US10722818

    申请日:2003-11-25

    IPC分类号: H01L29/10 H01L29/786

    摘要: A vertical structure thin film transistor is provided. The vertical structure thin film transistor has a stacked structure of a substrate, a first electrode, a dielectric thin film, a second electrode, a semiconductor thin film, and a third electrode, wherein current flows between the second and third electrodes perpendicularly to the substrate and is modulated by an electric field generated from the first electrode parallel to the current.

    摘要翻译: 提供了垂直结构薄膜晶体管。 垂直结构薄膜晶体管具有基板,第一电极,电介质薄膜,第二电极,半导体薄膜和第三电极的堆叠结构,其中电流在垂直于基板的第二和第三电极之间流动 并且由与第一电极平行的电流产生的电场调制。

    Method of preparing an extended conjugated molecular assembly
    47.
    发明授权
    Method of preparing an extended conjugated molecular assembly 有权
    制备延伸的共轭分子组装体的方法

    公开(公告)号:US07521091B2

    公开(公告)日:2009-04-21

    申请号:US11477664

    申请日:2006-06-30

    IPC分类号: B05D3/10 B05D5/12

    摘要: A method for preparing an extended conjugated molecular assembly includes applying onto a surface of a substrate a first molecular compound G1-Molecule1-G2, where G1 includes a first functional group, G2 includes a second functional group, and Molecule1 includes a conjugated organic group bonded to G1 and G2, reacting the first molecular compound with a second molecular compound G3-Molecule2-G4, where G3 includes a third functional group, G4 includes a fourth function group, and Molecule 2 includes a conjugated organic group bonded to G3 and G4, to form on the substrate an extended conjugated molecule G1-Molecule1-Molecule2-G4, and reacting the extended conjugated molecule with an additional molecular compound at least once to further extend the molecular assembly, the fourth functional group G4 interacting with the additional molecular compound.

    摘要翻译: 制备延伸的共轭分子组件的方法包括将第一分子化合物G1-Molecule1-G2(其中G1包括第一官能团)施加到基材的表面上,G2包括第二官能团,并且分子1包括键合的共轭有机基团 对于G1和G2,使第一分子化合物与第二分子化合物G3-Molecule2-G4反应,其中G3包括第三官能团,G4包括第四官能团,分子2包括键合到G3和G4的共轭有机基团, 在基底上形成延伸的共轭分子G1-Molecule1-Molecule2-G4,并使延伸的共轭分子与另外的分子化合物反应至少一次以进一步延长分子组装,第四官能团G4与另外的分子化合物相互作用。

    STACKED ORGANIC MEMORY DEVICES AND METHODS OF OPERATING AND FABRICATING
    48.
    发明申请
    STACKED ORGANIC MEMORY DEVICES AND METHODS OF OPERATING AND FABRICATING 有权
    堆叠有机存储器件和操作和制作方法

    公开(公告)号:US20090081824A1

    公开(公告)日:2009-03-26

    申请号:US12327040

    申请日:2008-12-03

    IPC分类号: H01L21/02

    摘要: The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.

    摘要翻译: 本发明提供一种多层有机存储器件,其可以作为其中构造有多个堆叠和/或并行存储器结构的非易失性存储器件来操作。 可以在两个或多个电极之间形成多单元和多层有机存储器组件,所述两个或更多个电极在形成各个单元的电极之间具有选择性导电介质,同时利用分隔组件使得能够堆叠额外的存储器单元, 以前形成的细胞。 可以通过添加额外的层 - 通过附加分隔部件分开的相应层来形成存储器堆叠,其中可以并行形成多个堆叠以提供高密度存储器件。

    Diode/superionic conductor/polymer memory structure
    49.
    发明授权
    Diode/superionic conductor/polymer memory structure 有权
    二极管/超导体/聚合物记忆结构

    公开(公告)号:US07338851B2

    公开(公告)日:2008-03-04

    申请号:US10890181

    申请日:2004-07-14

    IPC分类号: H01L21/8244

    摘要: A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over and in contact with the first metal-chalcogenide layer. The first metal-chalcogenide layer has a first conductivity type and the second metal-chalcogenide layer has a second conductivity type. The plane of contact between the first and second metal-chalcogenide layers creates the p-n junction of the built-in diode. Then a polymer layer is selectively deposited on the second metal-chalcogenide layer. The second metal-chalcogenide layer provides ions to the polymer layer to change its resistivity. A top electrode is then provided over the polymer layer. An exemplary memory cell may have the following stacked structure: first electrode/n-type semiconductor/p-type semiconductor/conjugated polymer/second electrode.

    摘要翻译: 通过在底部电极上提供第一金属 - 硫族化物层来形成具有内置二极管的共轭聚合物层。 随后,第二金属 - 硫族化物层设置在第一金属 - 硫属化物层上并与其接触。 第一金属 - 硫族化物层具有第一导电类型,第二金属 - 硫族化物层具有第二导电类型。 第一和第二金属 - 硫族化物层之间的接触平面形成内置二极管的p-n结。 然后将聚合物层选择性地沉积在第二金属 - 硫族化物层上。 第二金属 - 硫族化物层向聚合物层提供离子以改变其电阻率。 然后在聚合物层上提供顶部电极。 示例性存储单元可以具有以下堆叠结构:第一电极/ n型半导体/ p型半导体/共轭聚合物/第二电极。

    Using a crystallization-inhibitor in organic electroluminescent devices
    50.
    发明授权
    Using a crystallization-inhibitor in organic electroluminescent devices 有权
    在有机电致发光器件中使用结晶抑制剂

    公开(公告)号:US07211948B2

    公开(公告)日:2007-05-01

    申请号:US10756663

    申请日:2004-01-13

    IPC分类号: H05B33/14

    摘要: An organic electroluminescent device includes an anode; a hole-transporting layer disposed over the anode, a light-emitting layer disposed over the hole-transporting layer for producing light in response to hole-electron recombination, and an electron-transporting layer disposed over the light-emitting layer. The device also includes a crystallization-inhibitor incorporated within the electron-transporting layer, wherein the crystallization-inhibitor prevents the electron-transporting layer from crystallizing during operation, and a cathode disposed over the electron-transporting layer.

    摘要翻译: 有机电致发光器件包括阳极; 设置在阳极上的空穴传输层,设置在空穴传输层上的发光层,用于响应空穴电子复合产生光,以及设置在发光层上的电子传输层。 该装置还包括掺入电子传输层内的结晶抑制剂,其中结晶抑制剂防止电子传输层在操作期间结晶,以及阴极设置在电子传输层上。