Photomultiplier tube (PMT) having a reflective photocathode array
    41.
    发明授权
    Photomultiplier tube (PMT) having a reflective photocathode array 有权
    具有反射光电阴极阵列的光电倍增管(PMT)

    公开(公告)号:US09543130B2

    公开(公告)日:2017-01-10

    申请号:US14934107

    申请日:2015-11-05

    CPC classification number: H01J43/10 H01J43/08 H01J43/18

    Abstract: An internal portion of a photomultiplier tube (PMT) having a reflective photocathode array, and a method for manufacturing the same, are provided. The internal portion of the PMT comprises the reflective photocathode array and at least one dynode structure corresponding to the array of reflective photocathodes. Each reflective photocathode receives light and from the light, generates photoelectrons which then travel towards the at least one dynode structure. Upon the photoelectrons making contact with the at least one dynode structure, the photoelectrons are multiplied.

    Abstract translation: 提供了具有反射光电阴极阵列的光电倍增管(PMT)的内部部分及其制造方法。 PMT的内部部分包括反射光电阴极阵列和对应于反射光电阴极阵列的至少一个倍增极结构。 每个反射光电阴极接收光并且从光产生光电子,然后光电子朝向至少一个倍增电极结构行进。 当光电子与至少一个倍增极结构接触时,光电子被倍增。

    ELECTRONIC AMPLIFYING SUBSTRATE AND METHOD OF MANUFACTURING ELECTRONIC AMPLIFYING SUBSTRATE
    42.
    发明申请
    ELECTRONIC AMPLIFYING SUBSTRATE AND METHOD OF MANUFACTURING ELECTRONIC AMPLIFYING SUBSTRATE 审中-公开
    电子放大基板及制造电子放大基板的方法

    公开(公告)号:US20150380224A1

    公开(公告)日:2015-12-31

    申请号:US14769003

    申请日:2014-02-24

    Inventor: Takashi FUSHIE

    Abstract: An electronic amplifying substrate, including: a glass base material having an insulating property; conductive layers formed on both main surfaces of the glass base material; and a plurality of through holes formed on a lamination body of the glass base material and the conductive layer, wherein an electric field is formed in the through hole by a potential difference between both conductive layers during application of a voltage to a surface of the conductive layer so that an electron avalanche amplification occurs in the through hole, and an insulation part is formed on at least one main surface of the glass base material, with one of the end portions of the insulation part formed to surround an opening part of the through hole of the glass base material, and the other end portion formed in contact with the end portions of the conductive layers.

    Abstract translation: 一种电子放大基板,包括:具有绝缘性的玻璃基材; 形成在玻璃基材的两个主表面上的导电层; 以及多个通孔,其形成在所述玻璃基材和所述导电层的层叠体上,其中,在对所述导电层的表面施加电压期间,通过所述两个导电层之间的电位差在所述通孔中形成电场 使得在通孔中发生电子雪崩放大,并且绝缘部分形成在玻璃基材的至少一个主表面上,绝缘部分的一个端部形成为围绕通孔的开口部分 玻璃基材的孔,另一端部形成为与导电层的端部接触。

    Photomultiplier and detection systems
    43.
    发明授权
    Photomultiplier and detection systems 有权
    光电倍增管和检测系统

    公开(公告)号:US08993970B2

    公开(公告)日:2015-03-31

    申请号:US14082658

    申请日:2013-11-18

    Abstract: The invention provides a switchable photomultiplier switchable between a detecting state and a non-detecting state including a cathode upon which incident radiation is arranged to impinge. The photomultiplier also includes a series of dynodes arranged to amplify a current created at the cathode upon detection of photoradiation. The invention also provides a detection system arranged to detect radiation-emitting material in an object. The system includes a detector switchable between a detecting state in which the detector is arranged to detect radiation and a non-detecting state in which the detector is arranged to not detect radiation. The system further includes a controller arranged to control switching of the detector between the states such that the detector is switched to the non-detecting state while an external radiation source is irradiating the object.

    Abstract translation: 本发明提供了一种可切换的光电倍增器,其可在检测状态和非检测状态之间切换,包括入射辐射被布置成入射的阴极。 光电倍增管还包括一系列倍增电极,其布置成在检测到光辐射时放大阴极产生的电流。 本发明还提供了一种检测系统,用于检测物体中的辐射发射材料。 该系统包括可在检测器被布置成检测辐射的检测状态和检测器被布置为不检测辐射的非检测状态之间切换的检测器。 该系统还包括控制器,其被布置成控制检测器在状态之间的切换,使得当外部辐射源照射对象时,检测器切换到非检测状态。

    Transmission type photoelectric cathode and electron tube
    44.
    发明申请
    Transmission type photoelectric cathode and electron tube 失效
    透射型光电阴极和电子管

    公开(公告)号:US20050174052A1

    公开(公告)日:2005-08-11

    申请号:US10504979

    申请日:2003-02-24

    CPC classification number: H01J31/50 H01J1/34 H01J31/506 H01J2201/3421

    Abstract: A transmission type photocathode of the present invention comprises a light absorption layer 1 formed of diamond or a material containing diamond as a main component, a supporting frame 21 for reinforcing the mechanical strength of the light absorption layer 1, a first electrode 31 provided at the plane of incidence of the light absorption layer 1, and a second electrode 32 provided at the plane of emission of the light absorption layer 1. A voltage is applied between the plane of incidence and plane of emission of the light absorption layer 1 to form an electric field in the light absorption layer 1. When light to be detected is made incident and photoelectrons occur in the light absorption layer 1, the photoelectrons are accelerated to the plane of emission by the electric field formed in the light absorption layer 1, and emitted to the outside of the transmission type photocathode.

    Abstract translation: 本发明的透射型光电阴极包括由金刚石或含有金刚石作为主要成分的材料形成的光吸收层1,用于增强光吸收层1的机械强度的支撑框架21,设置在该光吸收层1上的第一电极31 光吸收层1的入射面和设置在光吸收层1的发射平面上的第二电极32。 在光吸收层1的入射平面和发光面之间施加电压,以在光吸收层1中形成电场。 当被检测的光入射并且在光吸收层1中出现光电子时,光电子通过形成在光吸收层1中的电场而被加速到发射平面,并且发射到透射型光电阴极的外部。

    Photomultiplier tube with an avalanche photodiode, a flat input end and
conductors which simulate the potential distribution in a
photomultiplier tube having a spherical-type input end
    45.
    发明授权
    Photomultiplier tube with an avalanche photodiode, a flat input end and conductors which simulate the potential distribution in a photomultiplier tube having a spherical-type input end 失效
    具有雪崩光电二极管的光电倍增管,平坦的输入端和模拟在具有球形输入端的光电倍增管中的电位分布的导体

    公开(公告)号:US5493176A

    公开(公告)日:1996-02-20

    申请号:US247746

    申请日:1994-05-23

    Inventor: Dennis E. Persyk

    CPC classification number: H01J43/04 H01J43/28

    Abstract: A photomultiplier uses an avalanche photodiode as a position-sensitive anode. The envelope of the photomultiplier has a flat input end. Electrically conductive regions mounted to the input end are configured to produce at the input end a potential distribution characteristic of a photomultiplier with a spherical-type input end as measured in a transverse plane immediately adjacent the spherical-type input end. A photocathode is located inside the photomultiplier and is electrically connected to the electrically conductivew regions. Advantageously, the envelope has flat sides and a square cross-section; in this instance, conductors are run along the sides to produce within the envelope a potential distribution characteristic of a photomultiplier which is cylindrical in cross-section, as measured at flat surfaces having the same shape as the envelope.

    Abstract translation: 光电倍增管使用雪崩光电二极管作为位置敏感阳极。 光电倍增管的信封具有平坦的输入端。 安装到输入端的导电区域被配置为在输入端产生具有球面类型输入端的光电倍增管的电位分布特性,该距离在紧邻球形输入端的横向平面中测量。 光电阴极位于光电倍增管的内部并与导电区域电连接。 有利的是,信封具有平坦的侧面和正方形的横截面; 在这种情况下,导体沿着侧面延伸以在外壳内产生横截面为圆柱形的光电倍增管的电位分布特性,如在与外壳形状相同的平面处测量的。

    Method for producing photomultiplier tube
    46.
    发明授权
    Method for producing photomultiplier tube 失效
    光电倍增管的制造方法

    公开(公告)号:US4963113A

    公开(公告)日:1990-10-16

    申请号:US388034

    申请日:1989-08-01

    CPC classification number: H01J43/08 H01J9/12

    Abstract: In a method of producing a photomultiplier tube comprising a vacuum container having an incident window, a photocathode formed on the inner surface of the incident window and an electron multiplier element spaced from the photocathode, a depositing mesh electrode on which a constituent for forming the photocathode has been deposited in advance is arranged between the photocathode and the electron multiplier element, and the constituent deposited on the depositing mesh electrode is deposited on the inner surface of said incident window, to form the photocathode.

    Abstract translation: 在制造包括具有入射窗的真空容器的光电倍增管的方法中,形成在入射窗的内表面上的光电阴极和与光电阴极隔开的电子倍增器元件,沉积网状电极,其上形成光电阴极的成分 已经沉积在光电阴极和电子倍增器元件之间,并且沉积在沉积网状电极上的构件沉积在所述入射窗的内表面上以形成光电阴极。

    Image integration and transfer plate
    47.
    发明授权
    Image integration and transfer plate 失效
    图像集成和转印板

    公开(公告)号:US3922576A

    公开(公告)日:1975-11-25

    申请号:US49190974

    申请日:1974-07-25

    Applicant: US ARMY

    Inventor: REDMAN CHARLES M

    CPC classification number: H01J29/44

    Abstract: A semiconductor plate receives an electron image on a first side, thereof. For an electronically controlled time, the image is integrated and stored in thousands of reversed biased PN junctions connected to micro-sized conductors, in the plate. At a second electronically controlled time, an intensified image is transferred outwardly from the second side of the plate.

    Abstract translation: 半导体板在其第一侧接收电子图像。 对于电子控制时间,图像被集成并存储在板中连接到微尺寸导体的数千个反向偏置PN结中。 在第二电子控制时间,增强的图像从板的第二侧向外转移。

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