公开(公告)号：US20090137074A1

公开(公告)日：2009-05-28

申请号：US12155237

申请日：2008-05-30

Applicant: Dae-Woo Lee ,  Do-Hyun Kwon ,  Hyun-Eok Shin ,  Ji-Yong Noh ,  Dae-Woo Kim

Inventor： Dae-Woo Lee ,  Do-Hyun Kwon ,  Hyun-Eok Shin ,  Ji-Yong Noh ,  Dae-Woo Kim

IPC: H01L21/00

CPC classification number: H01L27/3267 ,  H01L51/5218

Abstract: A method of manufacturing a display device includes: preparing a substrate including a first area and a second area, forming a first layer on the first area and the second area, forming a second layer on the first layer of the first area, respectively forming a first electrode layer on the second layer of the first area and the first layer of the second area, forming a reflective layer on the first electrode layer of the first area, and forming a second electrode layer on the reflective layer.

Abstract translation: 制造显示装置的方法包括：准备包括第一区域和第二区域的基板，在第一区域和第二区域上形成第一层，在第一区域的第一层上形成第二层，分别形成第一区域 在第一区域的第二层和第二区域的第一层上形成第一电极层，在第一区域的第一电极层上形成反射层，并在反射层上形成第二电极层。

公开(公告)号：US07403178B2

公开(公告)日：2008-07-22

申请号：US10817838

申请日：2004-04-06

Applicant: Yil Suk Yang ,  Jong Dae Kim ,  Dae Woo Lee ,  Tae Moon Roh ,  Il Yong Park ,  Sung Ku Kwon ,  Byoung Gon Yu

Inventor： Yil Suk Yang ,  Jong Dae Kim ,  Dae Woo Lee ,  Tae Moon Roh ,  Il Yong Park ,  Sung Ku Kwon ,  Byoung Gon Yu

IPC: G09G3/30 ,  G09G3/20 ,  G09G3/22

CPC classification number: G09G3/30 ,  G09G2310/027 ,  G09G2320/0276

Abstract: Provided is a source driver circuit for an active matrix electroluminescent (EL) display including a digital-to-analog converter/ramp circuit for converting a digital signal into an analog signal, and generating a ramp signal in this process, simultaneously, whereby high degree of integration would be possible since a conventional complicated circuit is not required and gray scale with the high characteristic can be implanted, regardless of a change of a temperature or a threshold voltage.

Abstract translation: 提供了一种用于有源矩阵电致发光（EL）显示器的源极驱动电路，其包括用于将数字信号转换为模拟信号的数模转换器/斜坡电路，并且在该过程中同时产生斜坡信号，由此高度 的集成是可能的，因为不需要常规的复杂电路，而不管温度或阈值电压的变化，都可以植入具有高特性的灰度级。

公开(公告)号：US20080170548A1

公开(公告)日：2008-07-17

申请号：US11970315

申请日：2008-01-07

Applicant: Kyung-Joo SUH ,  Beom-Sik BAE ,  Dae-Gyun KIM ,  Jung-Soo JUNG ,  Veronica KONDRATIEVA ,  Yong CHANG ,  Nae-Hyun LIM ,  Jung-Shin PARK ,  Dae-Woo LEE ,  Jun-Hwan OH

Inventor： Kyung-Joo SUH ,  Beom-Sik BAE ,  Dae-Gyun KIM ,  Jung-Soo JUNG ,  Veronica KONDRATIEVA ,  Yong CHANG ,  Nae-Hyun LIM ,  Jung-Shin PARK ,  Dae-Woo LEE ,  Jun-Hwan OH

IPC: H04Q7/00

CPC classification number: H04W36/0022 ,  H04W36/0033

Abstract: A handoff method between a source network to which a terminal is connected in order of a Base Station (BS) and an Access Service Network (ASN), and a target network to which the terminal is connected in order of a Packet Data Service Node (PDSN), a Packet Control Function (PCF) and an Access Network (AN). The terminal sends a handoff request message with AN information of the target network to the ASN via the BS. The ASN forwards the handoff request message to the PCF via the PDSN using the AN information. Upon receipt of the handoff request message, the PCF sends a request for session information to the ASN via the PDSN. The PDSN sends a request for context information to the ASN. Upon receipt of the session information request and the context information request, the ASN transfers the context information to the PDSN and transfers the session information to the AN via the PDSN and the PCF.

Abstract translation: 根据基站（BS）和接入服务网络（ASN）的顺序连接的终端的源网络与终端以分组数据业务节点的顺序连接的目的网络之间的切换方法 PDSN），分组控制功能（PCF）和接入网络（AN）。 终端通过BS向ASN发送具有目标网络的AN信息的切换请求消息。 ASN使用AN信息经由PDSN将切换请求消息转发到PCF。 在接收到切换请求消息时，PCF通过PDSN向ASN发送会话信息请求。 PDSN向ASN发送上下文信息请求。 在接收到会话信息请求和上下文信息请求之后，ASN将上下文信息传送到PDSN，并经由PDSN和PCF将会话信息传送给AN。

公开(公告)号：US07233018B2

公开(公告)日：2007-06-19

申请号：US11182671

申请日：2005-07-15

Applicant: Young Kyun Cho ,  Sung Ku Kwon ,  Tae Moon Roh ,  Dae Woo Lee ,  Jong Dae Kim

Inventor： Young Kyun Cho ,  Sung Ku Kwon ,  Tae Moon Roh ,  Dae Woo Lee ,  Jong Dae Kim

IPC: H01L29/06 ,  H01L31/00

CPC classification number: H01L29/7835 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/66659

Abstract: Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on which a Si layer, a relaxed SiGe epitaxial layer, a SiGe epitaxial layer, and a Si epitaxial layer are stacked or a substrate on which a Si layer having a well region, a SiGe epitaxial layer, and a Si epitaxial layer are stacked is formed. For the device having the heterojunction structure, the number of conduction carriers through a potential well and the mobility of the carriers increase to reduce an on resistance, thus increasing saturation current. Also, an intensity of vertical electric field decreases so that a breakdown voltage can be maintained at a very high level. Further, a reduction in vertical electric field due to the heterojunction structure leads to a gain in transconductance (Gm), with the results that a hot electron effect is inhibited and the reliability of the device is enhanced.

Abstract translation: 提供了具有Si / SiGe异质结结构的高压金属氧化物半导体场效应晶体管（HVMOSFET）及其制造方法。 在该方法中，层叠有Si层，弛豫SiGe外延层，SiGe外延层和Si外延层的基板或其上具有阱区的Si层，SiGe外延层和 Si外延层被形成。 对于具有异质结结构的器件，通过势阱的导电载流子数量和载流子的迁移率增加，以降低导通电阻，从而增加饱和电流。 此外，垂直电场的强度降低，使得击穿电压可以保持在非常高的水平。 此外，由于异质结构造成的垂直电场的减小导致跨导（Gm）的增益，结果是热电子效应被抑制，并且器件的可靠性增强。

公开(公告)号：US07133954B2

公开(公告)日：2006-11-07

申请号：US10625126

申请日：2003-07-22

Applicant: Yil-suk Yang ,  Jong-dae Kim ,  Tae-moon Roh ,  Dae-woo Lee ,  Sang-gi Kim ,  Il-yong Park ,  Byoung-gon Yu

Inventor： Yil-suk Yang ,  Jong-dae Kim ,  Tae-moon Roh ,  Dae-woo Lee ,  Sang-gi Kim ,  Il-yong Park ,  Byoung-gon Yu

IPC: G06F13/00 ,  G06F13/40

CPC classification number: G06F13/4217 ,  Y02D10/14 ,  Y02D10/151

Abstract: Provided is a data bus system for a micro controller which has an input/output (I/O) unit, a central processing unit (CPU), an internal memory unit, and a peripheral circuitry. The data bus system includes an external access bus used when data is output from the CPU or data is input to the I/O unit or the internal memory unit; an internal access bus used when data is input to the CPU, data is output from the I/O unit or the internal memory unit, or data is input to or output from the peripheral circuitry; and an internal memory test bus used when data is output from the internal memory unit and input to the I/O unit.

Abstract translation: 提供了一种用于微控制器的数据总线系统，其具有输入/输出（I / O）单元，中央处理单元（CPU），内部存储器单元和外围电路。 数据总线系统包括当从CPU输出数据或将数据输入到I / O单元或内部存储器单元时使用的外部存取总线; 当数据输入到CPU时使用的内部访问总线，数据从I / O单元或内部存储器单元输出，或者数据被输入到外围电路或从外围电路输出; 以及当从内部存储器单元输出数据并输入到I / O单元时使用的内部存储器测试总线。

公开(公告)号：US20050077367A1

公开(公告)日：2005-04-14

申请号：US10750656

申请日：2003-12-31

Applicant: Dae Woo Lee

Inventor： Dae Woo Lee

IPC: B60H1/08 ,  B60H1/00 ,  B60H1/02

CPC classification number: B60H1/00885

Abstract: In a heater control apparatus for a vehicle and a method for controlling the same, an engine control part controls a cooling water conduit control part so that the opening of a cooling water bypass is variably regulated in proportion to an interior temperature thereby increasing the efficiency of air conditioning of a vehicle.

Abstract translation: 在车辆用加热器控制装置及其控制方法中，发动机控制部控制冷却水导管控制部，使冷却水旁路的开度与内部温度成比例地变化地调节，从而提高效率 车辆的空调。

公开(公告)号：US06855581B2

公开(公告)日：2005-02-15

申请号：US10153975

申请日：2002-05-23

Applicant: Tae Moon Roh ,  Dae Woo Lee ,  Yil Suk Yang ,  Il Yong Park ,  Sang Gi Kim ,  Jin Gun Koo ,  Jong Dae Kim

Inventor： Tae Moon Roh ,  Dae Woo Lee ,  Yil Suk Yang ,  Il Yong Park ,  Sang Gi Kim ,  Jin Gun Koo ,  Jong Dae Kim

IPC: H01L21/76 ,  H01L21/84 ,  H01L27/12

CPC classification number: H01L27/1203 ,  H01L21/84

Abstract: The present invention relates to a method of fabricating a high-voltage high-power integrated circuit device using a substrate of a SOI structure in which an insulating film and a silicon layer are sequentially stacked on a silicon substrate. The method comprising the steps of sequentially forming an oxide film and a photoresist film on the silicon layer and then performing a photolithography process using a trench mask to pattern the photoresist film; patterning the oxide film using the patterned photoresist film as a mask and then removing the photoresist film remained after the patterning; etching the silicon layer using the patterned oxide film as a mask until the insulating film is exposed to form a trench; forming a nitride film on the entire surface including the trench, performing an annealing process and depositing polysilicon on the entire surface so that the trench is buried; and sequentially removing the polysilicon and the nitride film until the silicon layer is exposed to flatten the surface, thus forming a device isolating film for electrical isolation between devices within the trench. Therefore, the present invention can effectively reduce the isolation area of the trench between the high-voltage high-power device and the logic CMOS device and can easily control the concentration of a deep well.

Abstract translation: 本发明涉及使用其中绝缘膜和硅层依次层叠在硅衬底上的SOI结构的衬底的高压大功率集成电路器件的制造方法。 该方法包括以下步骤：在硅层上依次形成氧化物膜和光致抗蚀剂膜，然后使用沟槽掩模进行光刻工艺以对光刻胶膜进行图案化; 使用图案化的光致抗蚀剂膜作为掩模来图案化氧化膜，然后在图案化之后除去光致抗蚀剂膜; 使用所述图案化氧化膜作为掩模蚀刻所述硅层，直到所述绝缘膜暴露以形成沟槽; 在包括沟槽的整个表面上形成氮化物膜，执行退火处理并在整个表面上沉积多晶硅，使得沟槽被埋置; 并且顺序地去除多晶硅和氮化物膜，直到硅层暴露以使表面变平，从而形成用于在沟槽内的器件之间进行电隔离的器件隔离膜。 因此，本发明能够有效地降低高压大功率器件与逻辑CMOS器件之间的沟槽的隔离面积，能够容易地控制深井的浓度。

公开(公告)号：US06849690B2

公开(公告)日：2005-02-01

申请号：US10450759

申请日：2001-12-12

Applicant: Chang-Hun Han ,  Oh-Jin Kwon ,  Dae-Woo Lee

Inventor： Chang-Hun Han ,  Oh-Jin Kwon ,  Dae-Woo Lee

IPC: C08F257/02 ,  C08F279/06 ,  C08F285/00 ,  C08F287/00 ,  C08L53/02 ,  C08L51/09

CPC classification number: C08F285/00 ,  C08F257/02 ,  C08F279/06 ,  C08F287/00

Abstract: The present invention relates to a method of preparing rubber-modified styrene copolymer resin with excellent transparency and impact resistance, specifically to a method of preparing transparent resin of rubber-modified styrene copolymer comprising graft-copolymerizing styrene monomer and (meth)acrylate monomer in the presence of block or random styrene-butadiene copolymer which has 30-50% of styrene skeleton content and 20-40 cp of 5% toluene solution viscosity at 25 iÉ. According to the method of the present invention, the transparent resin containing the rubber particles of a double structure comprising onion and core-shell structure can provide transparent resin of rubber-modified styrene copolymer resin with excellent transparency and impact resistance as well as good gloss.

Abstract translation: 本发明涉及一种制备具有优异透明性和耐冲击性的橡胶改性苯乙烯共聚物树脂的方法，具体涉及一种制备橡胶改性苯乙烯共聚物的透明树脂的方法，其包括在苯乙烯单体和（甲基）丙烯酸酯单体中的接枝共聚物 存在嵌段或无规苯乙烯 - 丁二烯共聚物，其具有30-50％的苯乙烯骨架含量和20-40cp的25％的5％甲苯溶液粘度。 根据本发明的方法，含有包含洋葱和核 - 壳结构的双重结构的橡胶颗粒的透明树脂可以提供具有优异透明性和耐冲击性以及良好光泽的橡胶改性苯乙烯共聚物树脂的透明树脂。

公开(公告)号：US20050007315A1

公开(公告)日：2005-01-13

申请号：US10739735

申请日：2003-12-17

Applicant: Yil-Suk Yang ,  Byung-Doo Kim ,  Jong-Dae Kim ,  Tae-Moon Roh ,  Dae-Woo Lee ,  Byoung-Gon Yu ,  Il-Yong Park ,  Sung-Ku Kwon

Inventor： Yil-Suk Yang ,  Byung-Doo Kim ,  Jong-Dae Kim ,  Tae-Moon Roh ,  Dae-Woo Lee ,  Byoung-Gon Yu ,  Il-Yong Park ,  Sung-Ku Kwon

IPC: G09G3/30 ,  G09G3/32

CPC classification number: G09G3/3283 ,  G09G3/3241 ,  G09G2310/027 ,  G09G2330/021

Abstract: Disclosed is a low power and high density source driver and a current driven active matrix organic electroluminescent device having the same, in which all elements operate at a normal voltage and all circuits of the source driver are shielded from a high voltage of a panel. The source driver includes: a shift register for generating an enable signal for storing data; a data latch circuit for storing digital data inputted from an exterior; a line latch circuit for sequentially storing the data in response to the enable signal and outputting the stored data in parallel at one time in response to a load signal; a current type digital-to-analog converter for converting the digital data outputted from the line latch circuit into an analog signal, the analog signal being outputted in a form of a current signal; and a high voltage shield circuit for transferring the output of the current digital-to-analog converter to source lines of an external panel and for shielding internal circuits from a high voltage of the panel. The shift register, the data latch circuit, the line latch circuit, the current type digital-to-analog converter and the high voltage shield circuit are driven at a normal voltage.

Abstract translation: 公开了一种低功率和高密度源极驱动器以及具有这种驱动器的电流驱动有源矩阵有机电致发光器件，其中所有元件都工作在正常电压，并且源极驱动器的所有电路都屏蔽了面板的高电压。 源极驱动器包括：移位寄存器，用于产生用于存储数据的使能信号; 数据锁存电路，用于存储从外部输入的数字数据; 行锁存电路，用于响应于使能信号顺序地存储数据并响应于负载信号一次并行地输出存储的数据; 用于将从线路锁存电路输出的数字数据转换为模拟信号的电流型数模转换器，模拟信号以电流信号的形式输出; 以及用于将当前数模转换器的输出传送到外部面板的源极线并用于屏蔽内部电路与面板的高电压的高压屏蔽电路。 移位寄存器，数据锁存电路，线路锁存电路，电流型数模转换器和高压屏蔽电路以正常电压驱动。

公开(公告)号：US06511886B2

公开(公告)日：2003-01-28

申请号：US10032629

申请日：2001-12-26

Applicant: Jong-dae Kim ,  Sang-gi Kim ,  Tae-moon Roh ,  Jin-gun Koo ,  Dae-woo Lee ,  Kyoung-ik Cho

Inventor： Jong-dae Kim ,  Sang-gi Kim ,  Tae-moon Roh ,  Jin-gun Koo ,  Dae-woo Lee ,  Kyoung-ik Cho

IPC: H01L21336

CPC classification number: H01L29/7813 ,  H01L29/4232 ,  H01L29/4238

Abstract: A method for manufacturing a trench-gate type power semiconductor device is provided. A drift region having a low concentration of a first conductivity type and a body region of a second conductivity type are formed on a semiconductor substrate having a high concentration of the first conductivity type. A trench is formed using a nitride layer pattern and a sidewall oxide layer formed at sidewalls of the nitride layer pattern as a mask, and then the sidewall oxide layer is removed. The corners of the trench are rounded by performing a heat treatment in a hydrogen atmosphere. A source region having a high concentration of the first conductivity type is formed using the nitride layer pattern as a mask. The nitride layer pattern is removed, and an upper oxide layer pattern is formed to cover a predetermined portion of the source region and the gate conductive layer. A body contact region of the second conductivity type is formed using the upper oxide layer pattern as a mask. A source electrode is formed to be electrically connected to the body contact region, and a drain electrode is formed to be electrically connected to the semiconductor substrate.

Abstract translation: 提供一种制造沟槽栅型功率半导体器件的方法。 具有第一导电类型的低浓度和第二导电类型的体区的漂移区形成在具有高浓度的第一导电类型的半导体衬底上。 使用形成在氮化物层图案的侧壁处的氮化物层图案和侧壁氧化物层作为掩模形成沟槽，然后去除侧壁氧化物层。 通过在氢气氛中进行热处理，使沟槽的角部变圆。 使用氮化物层图案作为掩模来形成具有高浓度的第一导电类型的源区。 去除氮化物层图案，并且形成上部氧化物层图案以覆盖源极区域和栅极导电层的预定部分。 使用上部氧化物层图案作为掩模形成第二导电类型的体接触区域。 源电极形成为电连接到主体接触区域，并且形成漏电极以与半导体衬底电连接。