公开(公告)号：US11450887B2

公开(公告)日：2022-09-20

申请号：US16697799

申请日：2019-11-27

Applicant: Hyundai Motor Company ,  Kia Motors Corporation ,  UNIST (Ulsan National Institute of Science and Technology)

Inventor： KyoMin Shin ,  DongHui Kim ,  SangJoon Lee ,  Seung Ho Ahn ,  SungHoon Lim ,  Nam-Soon Choi ,  Sung You Hong ,  Choonki Kim ,  Koeun Kim ,  Yeonkyoung Kim

IPC: H01M10/0567 ,  H01M10/0525

Abstract: Disclosed herein are an electrolyte for a lithium secondary battery and a lithium secondary battery including the same. The disclosed lithium secondary battery includes: a cathode; an anode; a separator interposed between the cathode and the anode; and an electrolyte, wherein the electrolyte includes: a lithium salt; and a solvent including a perfluorinated ether-based solvent, fluoroethylene carbonate (FEC), and ethylmethyl carbonate (EMC).

公开(公告)号：US20220285731A1

公开(公告)日：2022-09-08

申请号：US17468222

申请日：2021-09-07

Applicant: Hyundai Motor Company ,  Kia Corporation ,  UNIST (Ulsan National Institute of Science and Technology)

Inventor： Sang Hun Lee ,  Jun Ki Rhee ,  Yeol Mae Yeo ,  Seung Min Oh ,  Yoon Sung Lee ,  Ji Eun Lee ,  Ko Eun Kim ,  Woo Young Jin ,  Sang Mok Park ,  Sung Ho Ban ,  Hyeon Gyu Moon ,  Hui Beom Nam ,  Hyun Soo Ma ,  Nam Soon Choi

IPC: H01M10/0567 ,  H01M10/0525 ,  H01M10/0568 ,  H01M10/0569 ,  H01M4/583 ,  H01M4/38 ,  H01M4/525 ,  H01M4/505

Abstract: Disclosed is an additive for increasing the electrochemical properties of lithium secondary batteries.

公开(公告)号：US20220285507A1

公开(公告)日：2022-09-08

申请号：US17636026

申请日：2020-11-19

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Ji Won Chang ,  Jae Won Jeong ,  Youngeun Choi ,  Wooseok Kim

IPC: H01L29/417 ,  H03K19/0948 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238

Abstract: A transistor includes a substrate; a pair of constant current forming regions provided in the substrate; a pair of source/drain regions respectively provided on the pair of constant current forming regions in the substrate; and a gate structure provided between the pair of source/drain regions, wherein any one of the constant current forming regions immediately adjacent to any one of the pair of source/drain regions serving as a drain forms a constant current between the any one of the pair of source/drain region serving as the drain and the any one of the constant current forming regions.

公开(公告)号：US20220258452A1

公开(公告)日：2022-08-18

申请号：US17680518

申请日：2022-02-25

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY) ,  DUKE UNIVERSITY

Inventor： Hyunhyub KO ,  Seungse CHO ,  Saewon KANG ,  Stephen L. CRAIG

IPC: B32B15/02 ,  B32B15/01 ,  H01B1/02

Abstract: Disclosed is a silver nanowire film including: silver nanowires A unidirectionally aligned in a longitudinal direction; and silver nanowires B randomly aligned in the longitudinal direction, in which the silver nanowires A and the silver nanowires B each are plural and satisfy Equation 1 below. [A]/([A]+[B])>⅔  [Equation 1] (In Equation 1 above, [A] represents the number of silver nanowires A having an alignment degree of less than ±15° from the alignment direction, and [B] represents the number of silver nanowires B having an alignment degree of ±15° or more from the alignment direction.)

公开(公告)号：US20220195212A1

公开(公告)日：2022-06-23

申请号：US17687861

申请日：2022-03-07

Applicant: Hyundai Motor Company ,  Kia Corporation ,  UNIST (Ulsan National Institute of Science and Technology)

Inventor： Ho-Tak Jeon ,  Choon-soo Lee ,  Minsoo Kim ,  Hyunhyub Ko

IPC: C09D7/62 ,  C09D175/04 ,  C09D5/00 ,  C09C1/30 ,  C09D7/40 ,  C09D5/16 ,  C08J5/18 ,  C08F12/08 ,  C08J3/20 ,  B05D1/00 ,  C08F4/04 ,  C08F2/04

Abstract: Disclosed is a coating composition which includes: polyurethane; and amphiphilic nanoparticles having an amine functional group and a fluorine functional group in their structure. Further provided are a polyurethane-silica composite film including e coating composition and a method of preparing the same.

公开(公告)号：US20220171742A1

公开(公告)日：2022-06-02

申请号：US17170781

申请日：2021-02-08

Applicant: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Sam Hyuk NOH ,  Hyeonho SONG

IPC: G06F16/18 ,  G06F16/14 ,  G06F12/06

Abstract: An electronic device and a method for controlling the same are disclosed. The electronic device of the disclosure includes a first memory including a main memory area and a file system area to which a pseudo file mapped with the main memory area is allocated, a second memory configured to operate as a main memory, and a processor configured to adjust percentages of the main memory area and the file system area on the first memory by allocating a free block included in the file system area to the pseudo file based on a size of an free page of the second memory.

公开(公告)号：US11336762B2

公开(公告)日：2022-05-17

申请号：US17250323

申请日：2019-04-09

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Jongsung Lee ,  Cheolgu Jo ,  Byongsu Seol ,  Jingook Kim ,  Junsik Park

IPC: H04M1/02 ,  H05K1/02

Abstract: An electronic device comprises: a first plate configured to face one surface of the electronic device; a second plate configured to face in a direction opposite to the first plate; a side bezel structure connected to the first plate and the second plate and configured to surround the side of the electronic device; and a printed circuit board mounted in the electronic device and configured to be connected to the side bezel structure, wherein the printed circuit board comprises: a ground area; a first conductive pad, disposed in one area of the printed circuit board, and configured to couple the side bezel structure and the printed circuit board; and a second conductive pad electrically connected to the ground area and disposed between the first conductive pad and the ground area, wherein the first conductive pad and the second conductive pad may be disposed at an interval through which a current, having a voltage equal to or greater than a threshold voltage between the first conductive pad and a second electrode, may flow.

公开(公告)号：US20220131150A1

公开(公告)日：2022-04-28

申请号：US17458926

申请日：2021-08-27

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Young-Gi LEE ,  Sung You HONG ,  Min Pyeong KIM ,  Dong Ok SHIN ,  Ju Young KIM ,  Juhye SONG ,  Ho Seung LEE

IPC: H01M4/62 ,  H01M4/583 ,  C08L1/28 ,  C08L9/06 ,  C08B11/12 ,  H01M10/0525 ,  H01M4/04

Abstract: Provided is a cellulose derivative composition for a secondary battery binder, a method of preparing a composition for a secondary battery electrode, including the same, and a secondary battery including the same. According to the inventive concept, the cellulose derivative composition for a secondary battery binder may include a compound represented by Formula 1 below.

公开(公告)号：US11316218B2

公开(公告)日：2022-04-26

申请号：US16862679

申请日：2020-04-30

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Hyun-Kon Song ,  Chihyun Hwang ,  Jonghak Kim

IPC: H01M12/02 ,  H01M12/08 ,  H01M10/0567 ,  H01M4/38

Abstract: Provided is a lithium-air secondary battery including: an air electrode (air cathode); a lithium anode (Li anode); and an electrolyte including a superoxide dismutase mimic catalyst (SODm).

公开(公告)号：US11296098B2

公开(公告)日：2022-04-05

申请号：US16699994

申请日：2019-12-02

Applicant: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Jun Hee Lee ,  Ho Sik Lee

IPC: H01L21/02 ,  H01L27/11507 ,  G11C15/04 ,  H01L49/02

Abstract: The present disclosure relates to a nonvolatile ternary memory device using a two-dimensional ferroelectric material and a method of manufacturing the same. The method of manufacturing the nonvolatile ternary memory device according to an embodiment of the present disclosure includes (a) forming a lower electrode on a substrate, (b) forming a two-dimensional ferroelectric material on the lower electrode, (c) forming a semiconductor on the two-dimensional ferroelectric material, and (d) forming an upper electrode on the semiconductor.