Line-transfer photosensitive device
    51.
    发明授权
    Line-transfer photosensitive device 失效
    线转印感光装置

    公开(公告)号:US4819067A

    公开(公告)日:1989-04-04

    申请号:US48476

    申请日:1987-05-06

    CPC classification number: H04N3/1568 H01L27/14643 H04N3/1525 H04N3/1575

    Abstract: An improved line-transfer photosensitive device and particularly a device which operates with a double drive charge comprises on at least one semiconductor substrate a photosensitive region made up of M lines of N photosensitive points. The photosensitive points of the different lines are connected in parallel by means of conductive columns to a line memory which carries out at least the transfer of the signal charges integrated on any one line of the phtosensitive region to a read register consisting of a charge-coupled shift register of the volume transfer type. The line memory is formed on a semiconductor substrate region having an impurity implantation of opposite type with respect to the substrate in order to produce a volume charge transfer. The region in which the line memory is formed has a dopant concentration which is lower than or equal to that of the region in which the shift register is formed.

    Abstract translation: 改进的线转印感光装置,特别是以双驱动电荷操作的装置在至少一个半导体衬底上包括由M个N光敏点组成的光敏区域。 不同线路的感光点通过导电柱并联连接到线路存储器,该线路存储器至少将集成在感光区域的任何一行上的信号电荷的传输执行到由电荷耦合 移位寄存器的音量传输类型。 线存储器形成在具有相对于衬底的相反类型的杂质注入的半导体衬底区域上,以便产生体积电荷转移。 形成行存储器的区域的掺杂浓度低于或等于形成移位寄存器的区域的掺杂浓度。

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