Analog image memory device using charge transfer
    1.
    发明授权
    Analog image memory device using charge transfer 失效
    使用电荷转移的模拟图像存储器件

    公开(公告)号:US4760558A

    公开(公告)日:1988-07-26

    申请号:US742617

    申请日:1985-06-07

    CPC分类号: H01L27/1057 G11C27/04

    摘要: An analog image memory device using charge transfer and comprising:a memory zone of N lines of M memory points, each memory point being formed by the integration on the same semiconductor substrate of an MIS capacity separated from a diode by a screen grid,means for selecting each memory point,means for writing in each memory point a charge amount corresponding to the analog signal to be stored andmeans for reading the memory zone line by line after writing.

    摘要翻译: 一种使用电荷转移的模拟图像存储器件,包括:M个存储点的N行的存储区,每个存储点通过在通过屏幕栅极与二极管分离的MIS容量的相同半导体衬底上的积分形成; 选择每个存储点,用于在每个存储器中写入与要存储的模拟信号相对应的电荷量的装置,以及用于在写入之后逐行读取存储区的装置。

    Line-transfer photosensitive device
    2.
    发明授权
    Line-transfer photosensitive device 失效
    线转印感光装置

    公开(公告)号:US4819067A

    公开(公告)日:1989-04-04

    申请号:US48476

    申请日:1987-05-06

    摘要: An improved line-transfer photosensitive device and particularly a device which operates with a double drive charge comprises on at least one semiconductor substrate a photosensitive region made up of M lines of N photosensitive points. The photosensitive points of the different lines are connected in parallel by means of conductive columns to a line memory which carries out at least the transfer of the signal charges integrated on any one line of the phtosensitive region to a read register consisting of a charge-coupled shift register of the volume transfer type. The line memory is formed on a semiconductor substrate region having an impurity implantation of opposite type with respect to the substrate in order to produce a volume charge transfer. The region in which the line memory is formed has a dopant concentration which is lower than or equal to that of the region in which the shift register is formed.

    摘要翻译: 改进的线转印感光装置,特别是以双驱动电荷操作的装置在至少一个半导体衬底上包括由M个N光敏点组成的光敏区域。 不同线路的感光点通过导电柱并联连接到线路存储器,该线路存储器至少将集成在感光区域的任何一行上的信号电荷的传输执行到由电荷耦合 移位寄存器的音量传输类型。 线存储器形成在具有相对于衬底的相反类型的杂质注入的半导体衬底区域上,以便产生体积电荷转移。 形成行存储器的区域的掺杂浓度低于或等于形成移位寄存器的区域的掺杂浓度。

    Analysis process of a line transfer photosensitive device and operating
device of such a process
    3.
    发明授权
    Analysis process of a line transfer photosensitive device and operating device of such a process 失效
    线路传输感光装置和操作装置的分析过程

    公开(公告)号:US4684993A

    公开(公告)日:1987-08-04

    申请号:US869133

    申请日:1986-05-30

    摘要: The present invention concerns an analysis process of a line transfer photosensitive device.The charge-signal and the charge noise transfers from the columns towards the memory have the same duration and are made by using a same training charge, stored in memory, that must be at least sufficient to allow to pass in high inversion at the beginning of the transfer from the columns towards the memory. The transfers of the charge-signal and the charge-noise from the memory towards the read-out register or the drain have the same duration and are made by using training charges at least sufficient to allow to pass in high inversion at the beginning of the transfer. These training charges are read with the charge-signal or collected with the charge-noise.

    摘要翻译: 本发明涉及一种线转印感光装置的分析方法。 从列到存储器的充电信号和充电噪声传输具有相同的持续时间,并且通过使用存储在存储器中的相同训练电荷来进行,其必须至少足以允许在开始时通过高反转 从列转移到记忆体。 电荷信号和充电噪声从存储器向读出寄存器或漏极的传输具有相同的持续时间,并且通过使用训练电荷至少足以允许在开始时的高反转中通过 转让。 这些培训费用是用充电信号读取的或用充电噪声收集的。

    Photosensitive device with juxtaposed reading registers
    4.
    发明授权
    Photosensitive device with juxtaposed reading registers 失效
    具有并置读取寄存器的感光器件

    公开(公告)号:US5777672A

    公开(公告)日:1998-07-07

    申请号:US744197

    申请日:1994-04-19

    CPC分类号: H04N3/1575 H01L27/14831

    摘要: In a CCD type photosensitive device, the charges produced in two consecutive columns of pixels are transferred into different reading registers: the charges from the first column are loaded into the first register and the charges from the second column travel through the first register to be loaded into the second register. The two reading registers are controlled by independent potentials during the step for the loading of these registers. The device makes it possible to increase the efficiency of the transfer between the two reading registers, especially when the registers are of the type working in a two-phase mode.

    摘要翻译: 在CCD型感光装置中,在两个连续的像素列中产生的电荷被转移到不同的读取寄存器中:来自第一列的电荷被加载到第一寄存器中,并且来自第二列的电荷通过第一寄存器运行以被加载 进入第二个登记册。 在加载这些寄存器的步骤期间,两个读取寄存器由独立电位控制。 该器件可以提高两个读取寄存器之间的传输效率,特别是当寄存器类型工作在两相模式时。

    Visible and near-infrared radiation detector

    公开(公告)号:US09880057B2

    公开(公告)日:2018-01-30

    申请号:US13882944

    申请日:2011-11-03

    摘要: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.

    CMOS imaging device with three-dimensional architecture having reading circuits and an electronic processing circuit arranged on different substrates
    8.
    发明授权
    CMOS imaging device with three-dimensional architecture having reading circuits and an electronic processing circuit arranged on different substrates 有权
    具有三维结构的具有读取电路的CMOS成像装置和布置在不同基板上的电子处理电路

    公开(公告)号:US08969773B2

    公开(公告)日:2015-03-03

    申请号:US13637223

    申请日:2011-03-25

    IPC分类号: H01L27/00 H01L27/146

    摘要: An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit.

    摘要翻译: 一种成像装置,包括:多个像素,每个像素包括光电检测器; 与多个光电检测器相关联的多个读取电路,每个读取电路包括对光电检测器进行充电/放电的第一MOS晶体管和将由光电检测器输出的电荷转换为电压的第二MOS晶体管; 电子处理电路,被配置为处理由所述读取电路输出的电压; 其上形成有像素和读取电路的第一衬底和与第一衬底不同的第二衬底,在其上形成电子处理电路,第二衬底通过电互连电连接到第一衬底,形成 读取电路和电子处理电路之间的电连接。

    Image sensor
    9.
    发明授权
    Image sensor 有权
    图像传感器

    公开(公告)号:US07417268B2

    公开(公告)日:2008-08-26

    申请号:US11490308

    申请日:2006-07-20

    IPC分类号: H01L27/148

    摘要: An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit being formed in a second semiconductor substrate, the second substrate being placed above the first substrate and separated therefrom by an intermediary insulating layer covering the access transistor, the photodiode receiving incident photons on its lower surface side opposite to the intermediary insulating layer.

    摘要翻译: 一种图像传感器,包括像素组件,每个像素包括光电二极管和连接到读取电路的存取晶体管,所述光电二极管和存取晶体管形成在第一半导体衬底中和上方,全部或部分读取电路形成为 第二半导体衬底,第二衬底被放置在第一衬底之上,并通过覆盖存取晶体管的中间绝缘层与其隔开,光电二极管在其与中间绝缘层相对的下表面侧接收入射光子。

    Pinned photodiode CMOS image sensor with a low supply voltage
    10.
    发明授权
    Pinned photodiode CMOS image sensor with a low supply voltage 有权
    固定光电二极管CMOS图像传感器具有低电源电压

    公开(公告)号:US09191597B2

    公开(公告)日:2015-11-17

    申请号:US13605685

    申请日:2012-09-06

    IPC分类号: H04N3/14 H04N5/3745 H04N5/359

    CPC分类号: H04N5/3745 H04N5/3597

    摘要: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

    摘要翻译: 一种用于控制图像传感器的装置,包括至少一个感光单元,该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管,所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路,其能够在将光电二极管放电到感测节点期间增加源极的电压。