公开(公告)号：US4760558A

公开(公告)日：1988-07-26

申请号：US742617

申请日：1985-06-07

Applicant: Jean L. Berger ,  Louis Brissot ,  Yvon Cazaux

Inventor： Jean L. Berger ,  Louis Brissot ,  Yvon Cazaux

IPC: G11B20/02 ,  G11C27/04 ,  H01L27/105 ,  H01L27/148 ,  H01L29/78 ,  G11C11/34 ,  H04N3/14 ,  H04N5/335

CPC classification number: H01L27/1057 ,  G11C27/04

Abstract: An analog image memory device using charge transfer and comprising:a memory zone of N lines of M memory points, each memory point being formed by the integration on the same semiconductor substrate of an MIS capacity separated from a diode by a screen grid,means for selecting each memory point,means for writing in each memory point a charge amount corresponding to the analog signal to be stored andmeans for reading the memory zone line by line after writing.

Abstract translation: 一种使用电荷转移的模拟图像存储器件，包括：M个存储点的N行的存储区，每个存储点通过在通过屏幕栅极与二极管分离的MIS容量的相同半导体衬底上的积分形成; 选择每个存储点，用于在每个存储器中写入与要存储的模拟信号相对应的电荷量的装置，以及用于在写入之后逐行读取存储区的装置。

公开(公告)号：US4819067A

公开(公告)日：1989-04-04

申请号：US48476

申请日：1987-05-06

Applicant: Jean L. Berger ,  Louis Brissot ,  Yvon Cazaux

Inventor： Jean L. Berger ,  Louis Brissot ,  Yvon Cazaux

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/374 ,  H01L29/78

CPC classification number: H04N3/1568 ,  H01L27/14643 ,  H04N3/1525 ,  H04N3/1575

Abstract: An improved line-transfer photosensitive device and particularly a device which operates with a double drive charge comprises on at least one semiconductor substrate a photosensitive region made up of M lines of N photosensitive points. The photosensitive points of the different lines are connected in parallel by means of conductive columns to a line memory which carries out at least the transfer of the signal charges integrated on any one line of the phtosensitive region to a read register consisting of a charge-coupled shift register of the volume transfer type. The line memory is formed on a semiconductor substrate region having an impurity implantation of opposite type with respect to the substrate in order to produce a volume charge transfer. The region in which the line memory is formed has a dopant concentration which is lower than or equal to that of the region in which the shift register is formed.

Abstract translation: 改进的线转印感光装置，特别是以双驱动电荷操作的装置在至少一个半导体衬底上包括由M个N光敏点组成的光敏区域。 不同线路的感光点通过导电柱并联连接到线路存储器，该线路存储器至少将集成在感光区域的任何一行上的信号电荷的传输执行到由电荷耦合 移位寄存器的音量传输类型。 线存储器形成在具有相对于衬底的相反类型的杂质注入的半导体衬底区域上，以便产生体积电荷转移。 形成行存储器的区域的掺杂浓度低于或等于形成移位寄存器的区域的掺杂浓度。

公开(公告)号：US4680476A

公开(公告)日：1987-07-14

申请号：US782139

申请日：1985-09-30

Applicant: Jean L. Berger ,  Louis Brissot ,  Yves Cazaux

Inventor： Jean L. Berger ,  Louis Brissot ,  Yves Cazaux

IPC: H04N5/335 ,  H01L27/146 ,  H04N3/15 ,  H04N3/14

CPC classification number: H01L27/14643 ,  H04N3/1575

Abstract: Use is made of a row memory and a read register, in which charge transfer takes place in volume. The threshold voltage of the negative feedback amplifiers is adjusted so that the operating point of the assembly constituted by each amplifier, the diode and the gate of the memory to which it is connected is located in the high gain zone of the transfer characteristic of the amplifier. It is possible to adjust the threshold voltage by an enhancement in its own type of impurities of the zone of the substrate located beneath the gate of one of the MOS transistors constituting the amplifier.

Abstract translation: 使用行存储器和读寄存器，其中电荷转移是在体积上进行的。 调整负反馈放大器的阈值电压，使得由每个放大器，二极管和与其连接的存储器的栅极构成的组件的工作点位于放大器的传输特性的高增益区域中 。 可以通过其构成放大器的MOS晶体管的栅极之下的衬底的区域的自身类型的杂质的增强来调整阈值电压。

公开(公告)号：US4609825A

公开(公告)日：1986-09-02

申请号：US562463

申请日：1983-12-16

Applicant: Jean L. Berger ,  Louis Brissot

Inventor： Jean L. Berger ,  Louis Brissot

IPC: G06T1/00 ,  H01L27/146 ,  H04N5/353 ,  H04N5/374 ,  H04N5/376 ,  H01J40/14 ,  H04N3/14

CPC classification number: H04N3/1556 ,  H01L27/14654

Abstract: In order to modulate the sensitivity of a photosensitive device by modulating the integration time, a first reading of each line of a photosensitive zone of the device is followed by a second reading at an adjustable time interval. The charges resulting from the first reading operation are removed to the drain while the parasitic charges and the signal charges resulting from the second reading operation are transferred to the read register at the same time. Modulation of the time interval which elapses between two readings of one line is carried out by varying the time which elapses between the injection of one drive pulse into the two registers which control respectively the first reading and the second reading of the lines.

Abstract translation: 为了通过调制积分时间来调制感光装置的灵敏度，器件的感光区域的每一行的第一次读取之后以可调整的时间间隔进行第二次读取。 由第一读取操作产生的电荷被移除到漏极，同时寄生电荷和由第二读取操作产生的信号电荷同时被传送到读取寄存器。 通过改变将一个驱动脉冲注入到分别控制线的第一读数和第二读数的两个寄存器之间经过的时间来执行在一行的两个读数之间经过的时间间隔的调制。

公开(公告)号：US4952788A

公开(公告)日：1990-08-28

申请号：US418186

申请日：1989-10-06

Applicant: Jean L. Berger ,  Marc Arques

Inventor： Jean L. Berger ,  Marc Arques

IPC: G01J1/02 ,  G01J1/44 ,  H01L27/146 ,  H01L31/10 ,  H04N5/359 ,  H04N5/374

CPC classification number: H04N5/3597 ,  H01L27/14665 ,  H01L27/14681 ,  H04N5/374

Abstract: The disclosure concerns photosensitive matrices, and especially those using NIPIN or PINIP type phototransistors made of amorphous silicon. To prevent problems of remanence, due to the collecting of holes in the base after an illumination stage, it is proposed to follow the step for reading the illumination signal by a remanence erasure step in which the phototransistor is made conductive in forward or reverse bias, so as to inject, into the base, electrons which will eliminate the holes by recombination. Switching on by reverse bias proves to be more efficient than switiching on by forward bias. The invention is applicable notably to a matrix structure of rows and columns of photosensitive sites in which each site is formed by a NIPIN transistor made of amorphous silicon in series with a reading diode that may be put into reverse conduction.

Abstract translation: 本公开涉及光敏矩阵，特别是使用由非晶硅制成的NIPIN或PINIP型光电晶体管的那些。 为了防止残留问题，由于在照明阶段之后收集基座中的孔，因此建议遵循用于通过正向或反向偏压使光电晶体管导通的剩磁擦除步骤读取照明信号的步骤， 以便将通过重组消除空穴的电子注入基底。 通过反向偏置开启被证明比通过正向偏压切换更有效率。 本发明特别适用于感光位置的行和列的矩阵结构，其中每个位置由与可能被反向传导的读取二极管串联的由非晶硅制成的NIPIN晶体管形成。

公开(公告)号：US4365217A

公开(公告)日：1982-12-21

申请号：US210141

申请日：1980-11-24

Applicant: Jean L. Berger ,  Jean L. Coutures

Inventor： Jean L. Berger ,  Jean L. Coutures

IPC: H01L21/822 ,  H01L27/04 ,  H03H15/02 ,  H03H19/00 ,  G11C27/02

CPC classification number: H03H15/02 ,  H03H19/004

Abstract: A switched capacity filter having capacities formed by MOS technology on a semiconductor substrate. The connection between two capacities whose first plates are formed by the semiconductor substrate are periodically connected by providing transfer of charges in the substrate on which these two capacities are integrated. The external or other plate of each capacity receives, the input voltage, or a reference voltage, or the surface potential under another capacity which is provided by a reinjection and reading device formed from a diode and a voltage follower stage.

Abstract translation: 一种具有通过MOS技术在半导体衬底上形成的容量的开关电容滤波器。 通过在其上集成有这两个容量的基板中提供电荷的转移，周期性地连接由第一板由半导体基板形成的两个电容之间的连接。 每个容量的外部或其他板接收由二极管和电压跟随器级形成的再注入和读取装置提供的另一容量下的输入电压或参考电压或表面电位。

公开(公告)号：US4350976A

公开(公告)日：1982-09-21

申请号：US215134

申请日：1980-12-10

Applicant: Roger Benoit-Gonin ,  Jean L. Berger ,  Jean L. Coutures

Inventor： Roger Benoit-Gonin ,  Jean L. Berger ,  Jean L. Coutures

IPC: H03M1/66 ,  H03M1/00 ,  H03K13/02

CPC classification number: H03M1/00 ,  H03M2201/02 ,  H03M2201/2241 ,  H03M2201/2266 ,  H03M2201/2291 ,  H03M2201/3105 ,  H03M2201/3178 ,  H03M2201/4135 ,  H03M2201/4212 ,  H03M2201/4233 ,  H03M2201/4262 ,  H03M2201/81 ,  H03M2201/8128 ,  H03M2201/814 ,  H03M2201/837

Abstract: Successive two-trip traversals of charges between gates G.sub.0 and G.sub.2 make it possible to obtain beneath gates G.sub.1 and G.sub.2 quantities of charges equal to Q.sub.R, Q.sub.R /2, Q.sub.R /2.sup.2 . . . Q.sub.R /2.sup.i. A readout device for reading charges and connected to gates G.sub.2 and G.sub.4 generates voltages V.sub.R and V.sub.Ri =a.sub.0 .multidot.V.sub.R +a.sub.1 .multidot.V.sub.R /2+ . . . +a.sub.i-1 .multidot.V.sub.R /2.sup.i-1 +V.sub.R /2.sup.i which are compared with a voltage sample V.sub.x to be coded in order to determine by successive approximations the coefficients a.sub.0 . . . a.sub.n which are equal to 0 or to 1 such that V.sub.x =a.sub.0 .multidot.V.sub.R +a.sub.1 .multidot.V.sub.R /2+ . . . +a.sub.n .multidot.V.sub.R /2.sup.n. Depending on the value of a.sub.i, each quantity of charges Q.sub.R /2.sup.i stored beneath gate G.sub.1 is removed beneath diode D.sub.e or stored beneath gate G.sub.3 and then transferred beneath gate G.sub.4.

Abstract translation: 栅极G0和G2之间的电荷的连续两次跳变使得可以获得栅极G1和G2之下的等于QR，QR / 2，QR / 22的电荷量。 。 。 QR / 2i 用于读取电荷并连接到门G2和G4的读出装置产生电压VR和VRi = a0xVR + a1xVR / 2 +。 。 。 + ai-1xVR / 2i-1 + VR / 2i，其与要编码的电压采样Vx进行比较，以便通过逐次逼近来确定系数a0。 。 。 a等于0或1，使得Vx = a0xVR + a1xVR / 2 +。 。 。 + anxVR / 2n。 根据ai的值，存储在栅极G1下方的每个电荷量QR / 2i在二极管De下方被去除或存储在栅极G3下方，然后在栅极G4下方传送。

公开(公告)号：US4321566A

公开(公告)日：1982-03-23

申请号：US136373

申请日：1980-04-01

Applicant: Jean L. Berger ,  Jean L. Coutures ,  Pierre Descure

Inventor： Jean L. Berger ,  Jean L. Coutures ,  Pierre Descure

IPC: G11C27/04 ,  H03H15/02 ,  G11C27/00

CPC classification number: H03H15/02 ,  G11C27/04

Abstract: The invention relates to a device for reading a quantity of electric charges then injecting in a charge-transfer device a quantity of charges which depends on the quantity previously read. This device comprises a reading grid connected to the source of an MOS charge-injection transistor operating in saturation and formed from two diodes and a control grid.

Abstract translation: 本发明涉及一种用于读取电荷量的装置，然后在电荷转移装置中注射取决于先前读取的量的电荷量。 该装置包括连接到饱和状态并由两个二极管和控制栅格形成的MOS电荷注入晶体管的源极的读取栅格。

公开(公告)号：US4833539A

公开(公告)日：1989-05-23

申请号：US133422

申请日：1987-12-15

Applicant: Jean L. Berger

Inventor： Jean L. Berger

IPC: H01L27/148 ,  H04N5/374

CPC classification number: H04N3/1575

Abstract: When the capacitance of the conductive columns of the line-transfer photosensitive device is higher than that of the photosensitive elements and of the read register, use is made of a reading circuit provided in the case of each conductive column with a plurality of charge storage capacitors separated by an MOS transistor. These MOS transistors operate in the saturating mode and pass signal charges derived from each conductive column from one capacitor to the next up to the read register. The storage capacitors have decreasing values as the distance from the read register becomes shorter. Transfer of the signal charges is accompanied by transfer of polarization charge quantities which decrease in value as the distance from the register becomes shorter. Once the transfer operations have been performed, these quantities of polarization charges are returned to their initial capacitors.

Abstract translation: 当行转印感光装置的导电柱的电容高于感光元件和读取寄存器的电容时，使用在每个导电柱的情况下提供的读取电路，其具有多个电荷存储电容器 由MOS晶体管分开。 这些MOS晶体管工作在饱和模式，并将从每个导电柱导出的信号电荷从一个电容器传递到下一个直到读取寄存器。 随着与读取寄存器的距离变短，存储电容器具有减小的值。 随着离寄存器的距离变短，信号电荷的传送伴随着偏移电荷量的转移，其数值会减小。 一旦执行了传送操作，这些极化电荷的量将返回到其初始电容器。

公开(公告)号：US4810881A

公开(公告)日：1989-03-07

申请号：US41020

申请日：1987-04-21

Applicant: Jean L. Berger ,  Marc Arques

Inventor： Jean L. Berger ,  Marc Arques

IPC: H01L27/14 ,  G01T1/20 ,  G01T1/29 ,  G21K4/00 ,  H01L27/146 ,  H01L31/09 ,  H04N5/374 ,  H01L31/00

CPC classification number: H01L27/1469 ,  G01T1/2018 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14663 ,  H04N3/1512 ,  H01L2224/48091 ,  H01L2924/13091 ,  H01L2924/3025 ,  H04N5/32

Abstract: The present invention pertains to a large-sized X-ray photography panel. This panel comprises several modules placed end to end. Each module comprises a network of photosensitive detectors with the same number of columns as the panels but with a smaller number of rows. Each module has its own addressing and reading means. The addressing means are located on an edge of the insulating substrate that bears the detectors. The reading means are located on the other side of the substrate from the detectors. A screen, which is opaque to the radiation to be detected, is interposed between the substrate and these means. These means are liked to the column connections coming from the opposite side of the substrate by connections along one of the side surfaces of the substrate.

Abstract translation: 本发明涉及一种大型X射线摄影面板。 该面板包括端到端放置的几个模块。 每个模块包括具有与面板相同数量的列但具有较少行数的光敏检测器网络。 每个模块都有自己的寻址和读取方式。 寻址装置位于承载检测器的绝缘基板的边缘上。 读取装置从检测器位于基板的另一侧。 对于待检测的辐射是不透明的屏幕，介于基板和这些装置之间。 这些装置喜欢通过沿衬底的一个侧表面的连接从衬底的相对侧的柱连接。