公开(公告)号：US09957601B2

公开(公告)日：2018-05-01

申请号：US13836996

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad Rasheed ,  Kirankumar Savandaiah ,  Alan A. Ritchie ,  Isaac Porras ,  Keith A. Miller

IPC: C23C16/04 ,  C23C14/00 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/0063 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/3405

Abstract: Apparatus for physical vapor deposition are provided herein. In some embodiments, a shield for use in a physical vapor deposition chamber, comprises an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, an annular groove formed in an inner wall of the one-piece body, and a plurality of gas distribution vents disposed along the annular feature and formed through the one-piece body, wherein the plurality of gas distribution vents are spaced apart from each other to distribute gases into the inner volume in a desired pattern.

公开(公告)号：US09848461B2

公开(公告)日：2017-12-19

申请号：US14500073

申请日：2014-09-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Keith A. Miller

IPC: H05B1/00 ,  H05B3/00 ,  H05B3/04

CPC classification number: H05B3/0038 ,  H05B3/04

Abstract: Embodiments of methods and apparatus for thermally treating a substrate are provided herein. In some embodiments, a thermal treatment apparatus includes a chamber body including an interior volume; a plurality of substrate supports disposed within the interior volume, wherein each of the plurality of substrate supports includes a heating element; a selectively sealable opening in the chamber body sized to allow substrates to be inserted into or removed from the interior volume; a robotic arm disposed in the interior volume to move substrates onto and off of the plurality of substrate supports; and a heating assembly configured to heat substrates disposed on the robotic arm.

公开(公告)号：US09580795B2

公开(公告)日：2017-02-28

申请号：US13785193

申请日：2013-03-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Keith A. Miller ,  Martin Lee Riker

IPC: H01J37/34 ,  C23C14/34

CPC classification number: C23C14/3407 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3455 ,  H01J37/3497

Abstract: In some embodiments, a sputter source for a process chamber may include: a first enclosure having a top, sides and an open bottom; a target coupled to the open bottom; an electrical feed coupled to the top of the first enclosure proximate a central axis of the first enclosure to provide power to the target via the first enclosure; a magnet assembly having a shaft, a support arm coupled to the shaft, and a magnet coupled to the support arm disposed within the first enclosure; a first rotational actuator disposed off-axis to the central axis of the first enclosure and rotatably coupled to the magnet to rotate the magnet about the central axis of the first enclosure; and a second rotational actuator disposed off-axis to the central axis of the first enclosure and rotatably coupled to the magnet to rotate the magnet about a central axis of the magnet assembly.

Abstract translation: 在一些实施例中，用于处理室的溅射源可以包括：具有顶部，侧面和开口底部的第一外壳; 一个目标耦合到开放的底部; 耦合到靠近第一外壳的中心轴线的第一外壳的顶部的电源，以经由第一外壳向目标提供电力; 具有轴的磁体组件，联接到所述轴的支撑臂和耦合到设置在所述第一外壳内的所述支撑臂的磁体; 第一旋转致动器，其设置在离第一外壳的中心轴线的轴线处并且可旋转地联接到磁体，以使磁体围绕第一外壳的中心轴线旋转; 以及第二旋转致动器，其离轴设置到第一外壳的中心轴线并且可旋转地联接到磁体，以使磁体围绕磁体组件的中心轴线旋转。

公开(公告)号：US09534286B2

公开(公告)日：2017-01-03

申请号：US13837742

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Goichi Yoshidome ,  Ryan Hanson ,  Donny Young ,  Muhammad Rasheed ,  Keith A. Miller

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3407 ,  H01J37/3414 ,  H01J37/3435 ,  Y10T428/218 ,  Y10T428/219

Abstract: In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.

Abstract translation: 在一些实施例中，用于具有过程屏蔽的衬底处理室中的目标组件可以包括具有第一侧和相对的第二侧的背板，其中第二侧包括具有第一直径的第一表面， 第一边 目标材料，其具有接合到所述背板的第一表面的第一侧; 其中所述第一边缘是所述背板和所述目标材料之间的界面; 沿着所述背板的第一侧面延伸到所述背板的所述第二侧面的沿着所述背板的外周设置的多个槽，其中所述多个槽被配置成相对于所述工艺防护罩对准所述目标组件。

公开(公告)号：US09476122B2

公开(公告)日：2016-10-25

申请号：US14204873

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Martin Lee Riker ,  Keith A. Miller ,  Anantha K. Subramani

IPC: C23C16/458 ,  H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/56 ,  C23C14/50

CPC classification number: C23C16/4585 ,  C23C14/34 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3408 ,  H01J37/3441

Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

公开(公告)号：US09177763B2

公开(公告)日：2015-11-03

申请号：US13837064

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad Rasheed ,  Alan A. Ritchie ,  Isaac Porras ,  Keith A. Miller

IPC: H01J37/244 ,  H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32816 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/3405 ,  H01J37/3441

Abstract: A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.

Abstract translation: 本文提供了用于物理气相沉积的方法和装置。 在一些实施例中，用于测量基板处理室的压力的装置可以包括具有环形一体式主体的屏蔽件，该主体具有内部容积，顶部开口和底部开口，其中环形单件主体的底部包括 内部向上延伸的U形部分，围绕屏蔽的外壁布置的气体注入适配器，形成在气体注入适配器内的压力测量导管，其中压力测量导管经由形成在外部 所述屏蔽壁和衬底处理室部件设置在所述屏蔽件附近，并且其中所述间隙具有与所述内部容积基本上相同的压力，以及联接到所述压力测量导管的压力检测器。