公开(公告)号：US5704964A

公开(公告)日：1998-01-06

申请号：US578224

申请日：1995-12-26

申请人： Teruji Kaneko ,  Kenji Ikeda ,  Masato Kawai ,  Kazuto Usogoe ,  Shin Hayashi ,  Kenji Kudo

发明人： Teruji Kaneko ,  Kenji Ikeda ,  Masato Kawai ,  Kazuto Usogoe ,  Shin Hayashi ,  Kenji Kudo

IPC分类号： B01D53/047

CPC分类号： B01D53/0476 ,  B01D2253/108 ,  B01D2253/25 ,  B01D2256/12 ,  B01D2257/102 ,  B01D2259/40003 ,  B01D2259/40007 ,  B01D2259/40015 ,  B01D2259/40024 ,  B01D2259/40037 ,  B01D2259/40071 ,  B01D2259/403

摘要： A pressure swing adsorption process which includes switching a plurality of adsorption columns packed with an adsorbent successively to an adsorption step, a pressure equalization step, an evacuation step, a vacuum purge step, a pressure equalization step and a repressurization step to allow a more strongly adsorbable component gas contained in a gaseous mixture to be adsorbed on the adsorbent and to separate a less strongly adsorbable component gas. The process further includes compressing the thus separated less strongly adsorbable component gas by a product gas compressor to supply it as a product gas. An adsorption column having completed the adsorption step and another adsorption column having completed the vacuum purge step are allowed to communicate to each other on product discharge sides and on raw material supply sides respectively in the pressure equalization step, to recover the product gas under gradual increase of gas flow rate on the raw material supply side and also to evacuate the adsorption column having completed the adsoroption step.

摘要翻译： 一种变压吸附方法，其包括将填充有吸附剂的多个吸附塔依次切换到吸附步骤，压力平衡步骤，排气步骤，真空吹扫步骤，压力平衡步骤和再加压步骤，以允许更强烈 气态混合物中所含的可吸附组分气体被吸附在吸附剂上并分离出不易吸附的组分气体。 该方法还包括通过产物气体压缩机压缩由此分离的不太强吸附的组分气体，以将其作为产物气体供应。 完成吸附步骤的吸附塔和完成真空吹扫步骤的另一个吸附塔在压力平衡步骤中分别在产品排出侧和原料供给侧彼此连通，以逐渐增加回收产物气体 的原料供给侧的气体流量，并且对已经完成吸附步骤的吸附塔进行抽真空。

公开(公告)号：US5079188A

公开(公告)日：1992-01-07

申请号：US300440

申请日：1989-01-23

申请人： Masato Kawai

发明人： Masato Kawai

IPC分类号： H01L21/316 ,  H01L21/3205 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002

摘要： A method for the production of a semiconductor device in which wiring is formed in three dimensions by the use of interlevel insulators having a flat surface, which method comprises the steps of: applying first insulation material and hardening by heat treatment to form an insulating film made of the first material; etching the insulating film made of the first material in such a manner that only concave portions of an underlying layer are filled with an insulator made of the first material; and forming an insulating film made of a second material thereon, wherein the interlevel insulator is formed by repeating the steps for at least two times so as to have a plurality of the insulators made of the first material which are separated by the insulating films made of the second material.

摘要翻译： 一种制造半导体器件的方法，其中通过使用具有平坦表面的层间绝缘体在三维上形成布线，该方法包括以下步骤：施加第一绝缘材料并通过热处理硬化以形成绝缘膜 的第一种材料; 蚀刻由第一材料制成的绝缘膜，使得只有下层的凹部填充有由第一材料制成的绝缘体; 以及在其上形成由第二材料制成的绝缘膜，其中所述层间绝缘体通过重复所述步骤至少两次而形成，以便具有多个绝缘体，所述绝缘体由所述第一材料制成，所述绝缘体由绝缘膜分隔，所述绝缘体由 第二种材料。

公开(公告)号：US4916087A

公开(公告)日：1990-04-10

申请号：US400013

申请日：1989-08-29

申请人： Hidehisa Tateoka ,  Shigeo Onishi ,  Masato Kawai

发明人： Hidehisa Tateoka ,  Shigeo Onishi ,  Masato Kawai

IPC分类号： H01L21/3105 ,  H01L21/311 ,  H01L21/762

CPC分类号： H01L21/02063 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/76229

摘要： A method of manufacturing a semiconductor device includes the steps of (a) depositing a first insulating film by an isotropic deposition method over the entire surface of a semiconductor substrate which is provided with a narrow trench having an opening width in submicrons and a broad trench having an opening width larger than 1 .mu.m so that the narrow and broad trenches are substantially filled with the first insulating film; (b) removing the first insulating film by an isotropic dry etching method; (c) depositing a second insulating film over the entire surface of the semiconductor substrate by an isotropic deposition method so that the narrow and broad trenches are substantially filled with the second insulating film; (d) forming a first resist layer on the broad trench filled with the second insulating film; (e) forming a second resist layer over the entire surface of the second insulating film and the first resist layer thereon; and (f) removing the first and second resist layers and the second insulating film by an anisotropic dry etching method until the surface of the semiconductor substrate is flattened.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）通过各向同性沉积方法在半导体衬底的整个表面上沉积第一绝缘膜，所述半导体衬底设置有具有亚微米的开口宽度的窄沟槽和宽的沟槽， 开口宽度大于1μm，使得窄和宽的沟槽基本上被第一绝缘膜填充; （b）通过各向同性干蚀刻法除去第一绝缘膜; （c）通过各向同性沉积方法在半导体衬底的整个表面上沉积第二绝缘膜，使得窄和宽的沟槽基本上被第二绝缘膜填充; （d）在填充有第二绝缘膜的宽沟槽上形成第一抗蚀剂层; （e）在其上的第二绝缘膜和第一抗蚀剂层的整个表面上形成第二抗蚀剂层; 和（f）通过各向异性干蚀刻方法去除第一和第二抗蚀剂层和第二绝缘膜，直到半导体基板的表面变平。