Method and Its Apparatus for Inspecting Particles or Defects of a Semiconductor Device
    51.
    发明申请
    Method and Its Apparatus for Inspecting Particles or Defects of a Semiconductor Device 有权
    检测颗粒的方法及其装置或半导体器件的缺陷

    公开(公告)号:US20080246964A1

    公开(公告)日:2008-10-09

    申请号:US12138889

    申请日:2008-06-13

    IPC分类号: G01N15/02

    摘要: Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

    摘要翻译: 通常,作为检测结果,粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。 对于制造过程中的故障采取对策,分析检查装置检测到的颗粒/缺陷。 由于检查装置输出大量检测到的粒子/缺陷,所以需要巨大的时间来分析检测到的粒子/缺陷,从而导致制造过程中的失败的对策的延迟。 在本发明中,用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。 数据处理电路从检查结果统计中指出故障原因,并显示检查结果信息。 通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析,以统计学评价检测出的粒子。

    Method and its apparatus for inspecting particles or defects of a semiconductor device
    53.
    发明申请
    Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
    用于检查半导体器件的颗粒或缺陷的方法及其装置

    公开(公告)号:US20070001132A1

    公开(公告)日:2007-01-04

    申请号:US11516344

    申请日:2006-09-05

    IPC分类号: G01N21/86

    摘要: Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

    摘要翻译: 通常,作为检测结果,粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。 对于制造过程中的故障采取对策,分析检查装置检测到的颗粒/缺陷。 由于检查装置输出大量检测到的粒子/缺陷,所以需要巨大的时间来分析检测到的粒子/缺陷,从而导致制造过程中的失败的对策的延迟。 在本发明中,用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。 数据处理电路从检查结果统计中指出故障原因,并显示检查结果信息。 通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析,以统计学评价检测出的粒子。

    Semiconductor device inspection method
    56.
    发明授权
    Semiconductor device inspection method 有权
    半导体器件检查方法

    公开(公告)号:US07332359B2

    公开(公告)日:2008-02-19

    申请号:US10082593

    申请日:2002-02-22

    IPC分类号: H01L31/26

    摘要: Techniques for inspecting semiconductor devices. An inspection condition using chip matrix data and chip size data is set. The intricate circuit patterns of at least one semiconductor device is inspected with the inspection condition. In an embodiment of the present invention, inspection uses images formed by the irradiation of white light, a laser light, or an electron beam. Data obtained from the inspection is used to generate a revised inspection condition. Semiconductor devices are inspected using the revised inspection condition.

    摘要翻译: 检查半导体器件的技术。 设置使用芯片矩阵数据和芯片尺寸数据的检查条件。 在检查条件下检查至少一个半导体器件的复杂电路图案。 在本发明的实施例中,检查使用通过照射白光,激光或电子束形成的图像。 使用从检查获得的数据来生成修订的检查条件。 使用修订的检查条件检查半导体器件。

    Method and apparatus for inspecting particles or defects of a semiconductor device
    57.
    发明申请
    Method and apparatus for inspecting particles or defects of a semiconductor device 审中-公开
    用于检查半导体器件的颗粒或缺陷的方法和装置

    公开(公告)号:US20070257214A1

    公开(公告)日:2007-11-08

    申请号:US11827522

    申请日:2007-07-11

    IPC分类号: G01N21/88

    摘要: Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

    摘要翻译: 通常,作为检测结果,粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。 对于制造过程中的故障采取对策,分析检查装置检测到的颗粒/缺陷。 由于检查装置输出大量检测到的粒子/缺陷,所以需要巨大的时间来分析检测到的粒子/缺陷,从而导致制造过程中的失败的对策的延迟。 在本发明中,用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。 数据处理电路从检查结果统计中指出故障原因,并显示检查结果信息。 通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析,以统计学评价检测出的粒子。