公开(公告)号：US11239298B2

公开(公告)日：2022-02-01

申请号：US16641560

申请日：2019-08-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Muxin Di ,  Yingwei Liu ,  Zhiwei Liang ,  Haixu Li ,  Zhanfeng Cao

IPC: G09G3/3225 ,  H01L27/32 ,  H01L51/56

Abstract: An Organic Light-emitting Diode (OLED) display substrate, a method of forming the same and a display device are provided. The OLED display substrate includes: a driving thin film transistor located on a base substrate and configured to drive an OLED light-emitting unit to emit light; and a photosensitive thin film transistor located on the base substrate and configured to be capable of detecting light emitted by the OLED light-emitting unit and generating an electrical signal, at least a part of film layers of the photosensitive thin film transistor and at least a part of film layers of the driving thin film transistor are disposed at a same layer and made of a same material.

公开(公告)号：US11239257B2

公开(公告)日：2022-02-01

申请号：US16468240

申请日：2019-01-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhiwei Liang ,  Yingwei Liu ,  Haixu Li ,  Muxin Di ,  Qingzhao Liu

IPC: H01L27/12 ,  H01L29/786

Abstract: The present disclosure provides a display backplane and a method for manufacturing the same, a display panel and a display device, and relates to the field of display technology. The display backplane includes a first backplane and a second backplane. The first backplane includes a first substrate, and a first thin film transistor, on the first substrate, configured to drive a light emitting unit. The second backplane, which is attached to a surface of the first substrate facing away from the first thin film transistor, includes a second substrate and at least one second thin film transistor located between the second substrate and the first substrate.

公开(公告)号：US20210407976A1

公开(公告)日：2021-12-30

申请号：US16765530

申请日：2019-05-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhiwei Liang ,  Wenqian Luo ,  Yingwei Liu ,  Ke Wang ,  Qi Yao ,  Huijuan Wang ,  Haixu Li ,  Zhanfeng Cao ,  Guangcai Yuan ,  Xue Dong ,  Guoqiang Wang ,  Zhijun Lv

IPC: H01L25/16 ,  H01L27/12 ,  H01L23/00

Abstract: Provided is a display backplate includes including an array substrate and a plurality of pairs of connection structures on the array substrate, wherein the array substrate includes a plurality of thin-film transistors and a common electrode signal line, wherein at least one of the plurality of thin-film transistors is connected to one of a pair of connection structures and the common electrode signal line is connected to the other of the pair of connection structures; and an area of a first section of the connection structure is negatively correlated with a distance between the first section and a surface of the array substrate, and the first section is parallel to the surface of the array substrate.

公开(公告)号：US20200273786A1

公开(公告)日：2020-08-27

申请号：US16530605

申请日：2019-08-02

Applicant: BOE Technology Group Co., Ltd.

Inventor： Muxin Di ,  Zhiwei Liang ,  Yingwei Liu ,  Ke Wang ,  Zhanfeng Cao ,  Renquan Gu ,  Qi Yao ,  Jaiil Ryu

IPC: H01L23/498 ,  H01L21/48

Abstract: Embodiments of the present disclosure provide an array substrate, a display device, a method for manufacturing an array substrate, a method for manufacturing a display device, and a spliced display device. The array substrate includes: a base substrate in which a through hole is provided; a filling portion disposed in the through hole, including a recessed structure and made from a flexible material; an electrically conductive pattern disposed on the filling portion and at least partially located in the recessed structure; and a film layer disposed on a side of the electrically conductive pattern facing away from the base substrate.

公开(公告)号：US10475824B2

公开(公告)日：2019-11-12

申请号：US15972096

申请日：2018-05-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingrong Ren ,  Woobong Lee ,  Fengchao Wang ,  Jianming Sun ,  Yingwei Liu ,  Wei Yang ,  Dongsheng Li

IPC: H01L27/12 ,  H01L27/146 ,  H01L31/0224 ,  H01L29/786

Abstract: The present disclosure provides a display panel, its manufacturing method and a display device. The manufacturing method of the display panel comprises: forming, on a substrate, a thin film transistor comprising a gate electrode, an active layer, a source electrode and a drain electrode; forming a hydrogen diffusion barrier layer that covers the entire substrate, wherein the hydrogen diffusion barrier layer is electrically conductive and is electrically connected to the drain electrode; and forming a photosensitive structure layer on the hydrogen diffusion barrier layer.

公开(公告)号：US20190305156A1

公开(公告)日：2019-10-03

申请号：US16169365

申请日：2018-10-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qingrong Ren ,  Jianming Sun ,  Yingwei Liu

IPC: H01L31/032 ,  H01L27/32 ,  H01L31/0336 ,  H01L31/105 ,  H01L31/0392

Abstract: A photosensitive element includes a first film layer, a second film layer and a third film layer. The first film layer, the second film layer and the third film layer are in a sequentially stacked structure, the first film layer is a p-type copper indium gallium selenide (CIGS) layer, the second film layer is an i-type CIGS layer, and the third film layer is an n-type film layer, and the first film layer, the second film layer and the third film layer form a PIN junction structure.

公开(公告)号：US10203830B2

公开(公告)日：2019-02-12

申请号：US15778310

申请日：2017-05-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yingwei Liu ,  Ning Chen

IPC: G06F3/046 ,  H01L27/12 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  G06F3/0354

Abstract: An electronic device, a manufacturing method and an operation method thereof, and an electronic copy system. Each pixel unit of the electronic device includes a Hall-effect working electrode including a first, second, third and fourth contact position, a thin film transistor, a gate line, a first common line, a second common line, a data line and a sensing line. A line connecting the first contact position and the second contact position intersects a line connecting the third contact position and the fourth contact position; the thin film transistor includes a gate electrode connected with the gate line, a source electrode connected with the data line and a drain electrode, the drain electrode and sensing line are respectively connected with the first and second contact position; the first and second common line are respectively connected with the Hall-effect working electrode through the third and fourth contact position.

公开(公告)号：US20190019813A1

公开(公告)日：2019-01-17

申请号：US15972096

申请日：2018-05-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingrong Ren ,  Woobong Lee ,  Fengchao Wang ,  Jianming Sun ,  Yingwei Liu ,  Wei Yang ,  Dongsheng Li

IPC: H01L27/12 ,  H01L27/146 ,  H01L31/0224

Abstract: The present disclosure provides a display panel, its manufacturing method and a display device. The manufacturing method of the display panel comprises: forming, on a substrate, a thin film transistor comprising a gate electrode, an active layer, a source electrode and a drain electrode; forming a hydrogen diffusion barrier layer that covers the entire substrate, wherein the hydrogen diffusion barrier layer is electrically conductive and is electrically connected to the drain electrode; and forming a photosensitive structure layer on the hydrogen diffusion barrier layer.