公开(公告)号：US07713757B2

公开(公告)日：2010-05-11

申请号：US12049047

申请日：2008-03-14

申请人： Majeed A. Foad ,  Shijian Li

发明人： Majeed A. Foad ,  Shijian Li

IPC分类号： H01L21/66 ,  C23F1/08 ,  C23C16/44

CPC分类号： G01N21/68 ,  G01N21/59 ,  H01L21/26513 ,  H01L22/12 ,  H01L22/26

摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.

摘要翻译： 本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。 在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收 通过位于基板下方的传感器进行光照射。 该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生 一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。

公开(公告)号：US20090197010A1

公开(公告)日：2009-08-06

申请号：US12069425

申请日：2008-02-06

申请人： Peter I. Porshnev ,  Majeed A. Foad

发明人： Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： C23C14/48 ,  B05C13/00

CPC分类号： C23C14/48 ,  H01J37/32082 ,  H01J37/32412 ,  H01J37/32541 ,  H01J37/32706

摘要： In a plasma reactor, RF bias power is applied from an RF bias power generator to a disk-shaped electrode underlying and insulated from a workpiece and having a circumferential edge underlying a circumferential edge of the workpiece. The RF bias power is sufficient to produce a high RF bias voltage on the workpiece on the order of 0.5-20 kV. Non-uniformity in distribution of plasma across the workpiece is reduced by providing a curvature in a peripheral edge annulus of said electrode whereby the peripheral annulus slopes away from the workpiece support surface. The peripheral edge annulus corresponds to a small fraction of an area of said electrode. The remainder of the electrode encircled by the peripheral annulus has a flat shape.

摘要翻译： 在等离子体反应器中，RF偏置功率从RF偏置功率发生器施加到下面并与工件绝缘并且具有位于工件的圆周边缘周围的圆周边缘的盘形电极。 RF偏压功率足以在工件上产生大约0.5-20 kV的高RF偏置电压。 通过在所述电极的外围边缘环中提供曲率来减小等离子体在工件上的分布的不均匀性，由此外围环形空间远离工件支撑表面。 外围边缘环对应于所述电极的一小部分面积。 由外围环圈包围的电极的其余部分具有平坦的形状。

公开(公告)号：US20090195777A1

公开(公告)日：2009-08-06

申请号：US12417289

申请日：2009-04-02

申请人： Kartik Ramaswamy ,  Seon-Mee Cho ,  Tsutomu Tanaka ,  Majeed A. Foad

发明人： Kartik Ramaswamy ,  Seon-Mee Cho ,  Tsutomu Tanaka ,  Majeed A. Foad

IPC分类号： G01J3/28 ,  H01J49/00 ,  B05C11/00 ,  H01L21/3065

CPC分类号： C23C14/48 ,  C23C14/54 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32935

摘要： The present invention generally provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe.

摘要翻译： 本发明通常提供了在等离子体处理期间实时控制离子剂量的方法和装置。 在一个实施方案中，离子剂量可以使用来自与来自RF探针的原位测量组合的质量分布传感器等离子体进行原位测量来控制。

公开(公告)号：US20080149135A1

公开(公告)日：2008-06-26

申请号：US11954551

申请日：2007-12-12

申请人： Seon-Mee Cho ,  Majeed A. Foad

发明人： Seon-Mee Cho ,  Majeed A. Foad

IPC分类号： B08B7/04 ,  B08B3/08

CPC分类号： H01L21/67075 ,  G03F7/42 ,  G03F7/423 ,  G03F7/426 ,  H01L21/31133

摘要： A process for stripping photoresist from a substrate is provided. A processing system for implanting a dopant into a layer of a film stack, annealing the stripped film stack, and stripping the implanted film stack is also provided. When high dopant concentrations are implanted into a photoresist layer, a crust layer may form on the surface of the photoresist layer that may not be easily removed. The methods described herein are effective for removing a photoresist layer having such a crust on its surface.

摘要翻译： 提供了从基板剥离光致抗蚀剂的方法。 还提供了一种用于将掺杂剂注入薄膜堆叠层，退火剥离的薄膜堆叠以及剥离植入薄膜叠层的处理系统。 当将高掺杂剂浓度注入到光致抗蚀剂层中时，可能在光致抗蚀剂层的表面上形成可能不容易除去的外壳层。 本文描述的方法对于在其表面上去除具有这样的外壳的光致抗蚀剂层是有效的。

公开(公告)号：US20080138968A1

公开(公告)日：2008-06-12

申请号：US11748876

申请日：2007-05-15

申请人： PETER PORSHNEV ,  Majeed A. Foad

发明人： PETER PORSHNEV ,  Majeed A. Foad

IPC分类号： H01L21/26

CPC分类号： H01L21/2236 ,  H01L29/66575

摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.

摘要翻译： 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，从腔室中的包括反应气体和蚀刻气体的气体混合物产生等离子体，调节反应气体与蚀刻物之间的比例 在所提供的气体混合物中的气体和从等离子体离子注入衬底。 在另一个实施方案中，该方法包括将基底提供到处理室中，将包含反应气体和含卤素的还原气体的气体混合物供应到室中，从气体混合物形成等离子体，逐渐增加蚀刻气体的比例 气体混合物，并将离子从气体混合物中注入衬底中。

公开(公告)号：US09206512B2

公开(公告)日：2015-12-08

申请号：US13528906

申请日：2012-06-21

申请人： Hanh D. Nguyen ,  Majeed A. Foad ,  Dieter Haas ,  Karl J. Armstrong ,  Xiaoxiong Yuan

发明人： Hanh D. Nguyen ,  Majeed A. Foad ,  Dieter Haas ,  Karl J. Armstrong ,  Xiaoxiong Yuan

IPC分类号： C23C16/455 ,  F17D1/00

CPC分类号： C23C16/455 ,  C23C16/45565 ,  F17D1/00 ,  Y10T137/8593

摘要： In some embodiments, a gas distribution system may include a body disposed within a through hole formed in a process chamber body, the body comprising an opening, wherein an outer surface of the body is disposed a first distance from an inner surface of the through hole to form a first gap; a flange disposed proximate a first end of the body, the flange having an outer dimension greater than an inner dimension of the through hole; a showerhead disposed proximate a second end of the body opposite the first end and extending outwardly from the body to overlap a portion of the process chamber body, the showerhead configured to allow a flow of gas to an inner volume of the process chamber, wherein an outer surface of the showerhead is disposed a second distance from an inner surface of the process chamber body to form a second gap.

摘要翻译： 在一些实施例中，气体分配系统可以包括设置在形成在处理室主体中的通孔内的主体，主体包括开口，其中主体的外表面与通孔的内表面第一距离设置 形成第一个差距; 靠近所述主体的第一端设置的凸缘，所述凸缘具有大于所述通孔的内部尺寸的外部尺寸; 淋浴头，其设置在所述主体的与所述第一端相对的第二端附近并且从所述主体向外延伸以与所述处理室主体的一部分重叠，所述喷头构造成允许气体流动到所述处理室的内部容积，其中， 淋浴喷头的外表面与处理室主体的内表面设置成第二距离，以形成第二间隙。

公开(公告)号：US08288257B2

公开(公告)日：2012-10-16

申请号：US12606897

申请日：2009-10-27

申请人： Matthew D. Scotney-Castle ,  Majeed A. Foad ,  Peter I. Porshnev

发明人： Matthew D. Scotney-Castle ,  Majeed A. Foad ,  Peter I. Porshnev

IPC分类号： H01L21/425

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： Methods for implanting material into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting material into a substrate includes providing a substrate into a processing chamber, the substrate comprising a substrate surface having a material layer formed thereon, generating a first plasma of a non-dopant processing gas, exposing the material layer to the plasma of the non-dopant processing gas, generating a second plasma of a dopant processing gas including a reacting gas adapted to produce dopant ions, and implanting dopant ions from the plasma into the material layer. The method may further include a cleaning or etch process.

摘要翻译： 提供了通过等离子体浸没离子注入工艺将材料注入衬底的方法。 在一个实施例中，用于将材料注入衬底的方法包括将衬底提供到处理室中，所述衬底包括其上形成有材料层的衬底表面，产生非掺杂剂处理气体的第一等离子体，暴露材料层 涉及非掺杂剂处理气体的等离子体，产生掺杂剂处理气体的第二等离子体，所述掺杂剂处理气体包括适于产生掺杂剂离子的反应气体，以及将等离子体中的掺杂剂离子注入材料层。 该方法还可以包括清洁或蚀刻工艺。

公开(公告)号：US08168519B2

公开(公告)日：2012-05-01

申请号：US13101843

申请日：2011-05-05

申请人： Shijian Li ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Seon-Mee Cho ,  Biagio Gallo ,  Dongwon Choi ,  Majeed A. Foad

发明人： Shijian Li ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Seon-Mee Cho ,  Biagio Gallo ,  Dongwon Choi ,  Majeed A. Foad

IPC分类号： H01L21/425

CPC分类号： H01J37/32412 ,  C23C14/48 ,  C23C14/564 ,  H01L21/2236

摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.

摘要翻译： 在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

公开(公告)号：US08129261B2

公开(公告)日：2012-03-06

申请号：US12606877

申请日：2009-10-27

申请人： Peter I. Porshnev ,  Matthew D. Scotney-Castle ,  Majeed A. Foad

发明人： Peter I. Porshnev ,  Matthew D. Scotney-Castle ,  Majeed A. Foad

IPC分类号： H01L21/265 ,  H01L21/302 ,  H01L21/322

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, the substrate comprising substrate surface having one or more features formed therein and each feature having one or more horizontal surfaces and one or more vertical surfaces, generating a plasma from a gas mixture including a reacting gas adapted to produce ions, depositing a material layer on the substrate surface and on at least one horizontal surface of the substrate feature, implanting ions from the plasma into the substrate by an isotropic process into at least one horizontal surface and into at least one vertical surface, and etching the material layer on the substrate surface and the at least one horizontal surface by an anisotropic process.

摘要翻译： 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，所述衬底包括具有形成在其中的一个或多个特征的衬底表面，并且每个特征具有一个或多个水平表面和一个或多个垂直表面， 来自包括适于产生离子的反应气体的气体混合物的等离子体，在衬底表面上沉积材料层和在衬底特征的至少一个水平表面上，通过各向同性方法将离子从等离子体注入到衬底中至少 一个水平表面并且进入至少一个垂直表面，并且通过各向异性工艺蚀刻衬底表面上的材料层和至少一个水平表面。

公开(公告)号：US07968401B2

公开(公告)日：2011-06-28

申请号：US12550142

申请日：2009-08-28

申请人： Martin A. Hilkene ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Martin A. Hilkene ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/3065 ,  H01L21/336 ,  H01L21/425 ,  H01L21/8238

CPC分类号： H01L21/2236 ,  H01L21/31138

摘要： A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.

摘要翻译： 在其顶表面上具有光致抗蚀剂掩模的工件的等离子体浸没离子注入的方法防止光致抗蚀剂从光致抗蚀剂的碳化失效。 该方法包括执行连续的离子注入子步骤，每个离子注入子步骤具有仅通过离子注入损坏光致抗蚀剂层的仅部分顶部的持续时间。 在连续离子注入子步骤中的每一个之后，去除光致抗蚀剂的分数顶部，同时通过执行灰化子步骤留下光致抗蚀剂层的剩余部分就位。 连续离子注入子步骤的数量足以在工件中达到预定的离子注入剂量。