公开(公告)号：US20070215060A1

公开(公告)日：2007-09-20

申请号：US11312374

申请日：2005-12-21

申请人： Chih-Hung Lin

发明人： Chih-Hung Lin

IPC分类号： A01K63/00

CPC分类号： A01K63/003

摘要： A fish aquarium has a connecting slice, a first side-slice and a second side-slice. The connecting slice has a joint and two thermal-pressed sections. The first side-slice is attached to one of the thermal-pressed sections and has a printed pattern and a buckled chain mounted on the first side-slice near the distal edge. The second side-slice is attached to the other thermal-pressed section and has a buckled chain near the distal edge to engage with the buckled chain of the first side slice. The first side-slice and the second side-slice are combined together with a thermal compression process to form a thermal-sealed segment, a thermal-seal line, an interior space and an opening between the side-slices.

摘要翻译： 鱼类水族馆有连接片，第一侧片和第二片。 连接切片具有接头和两个热压部分。 第一侧片连接到热压部分中的一个，并且具有印刷图案和安装在远侧边缘附近的第一侧片上的带扣链。 第二侧切片附接到另一个热压部分，并且在远侧边缘附近具有弯曲的链条以与第一侧切片的弯曲的链条接合。 第一侧切片和第二侧切片与热压缩工艺组合在一起以形成热密封部分，热密封线，内部空间和侧切片之间的开口。

公开(公告)号：US20070018258A1

公开(公告)日：2007-01-25

申请号：US11160657

申请日：2005-07-05

申请人： Anchor Chen ,  Chih-Hung Lin ,  Hwi-Huang Chen ,  Jih-Wei Liou ,  Chin-Hung Liu ,  Ming-Tsung Tung ,  Chien-Ming Lin ,  Jung-Ching CHEN

发明人： Anchor Chen ,  Chih-Hung Lin ,  Hwi-Huang Chen ,  Jih-Wei Liou ,  Chin-Hung Liu ,  Ming-Tsung Tung ,  Chien-Ming Lin ,  Jung-Ching CHEN

IPC分类号： H01L29/76

CPC分类号： H01L29/0692 ,  H01L29/0638 ,  H01L29/1041 ,  H01L29/7833

摘要： A high-voltage device structure includes a high-voltage device disposed on a semiconductor substrate. The semiconductor includes an active region and an isolation region, and the high-voltage device is disposed in the active region. The high-voltage device structure includes a source diffusion region of a first conductive type, a drain region of the first conductive type, and a gate longer than the source diffusion region and the drain diffusion region so as to form spare regions on both sides of the gate. The isolation region is outside the active region and surrounds the active region. In the isolation region, an isolation ion implantation region of a second conductive type and an extended ion implantation region are disposed to prevent parasitic current from being generating between the source diffusion region and the drain diffusion region.

摘要翻译： 高压器件结构包括设置在半导体衬底上的高电压器件。 半导体包括有源区和隔离区，高压器件设置在有源区中。 高压器件结构包括第一导电类型的源极扩散区域，第一导电类型的漏极区域和比源极扩散区域和漏极扩散区域更长的栅极，以在第二导电类型的两侧形成备用区域 大门。 隔离区域在有源区域之外并且围绕有源区域。 在隔离区域中，设置第二导电型隔离离子注入区域和延伸离子注入区域，以防止在源极扩散区域和漏极扩散区域之间产生寄生电流。

公开(公告)号：US20060142938A1

公开(公告)日：2006-06-29

申请号：US11115266

申请日：2005-04-27

申请人： Chih-Hung Lin ,  Chih-Sheng Chang

发明人： Chih-Hung Lin ,  Chih-Sheng Chang

IPC分类号： G01C21/00

CPC分类号： G01C22/006

摘要： An inertial positioning system is disclosed, which includes at least one sensor, an inertial processing unit, a step-distance determination module, a external positioning module, a Kalman filter and an output terminal, wherein the step-distance determinate module estimates an inertial step-distance via analyzing peak values of velocity and time intervals, and in addition, the external positioning module provides a precise initial state to effectively constrain error of the estimated step-distance.

摘要翻译： 公开了一种惯性定位系统，其包括至少一个传感器，惯性处理单元，步距确定模块，外部定位模块，卡尔曼滤波器和输出端子，其中步距确定模块估计惯性步骤 通过分析速度和时间间隔的峰值，并且外部定位模块提供精确的初始状态以有效地约束估计步距的误差。

公开(公告)号：US5882970A

公开(公告)日：1999-03-16

申请号：US552428

申请日：1995-11-03

申请人： Chih-Hung Lin ,  Hwi-Huang Chen ,  Gary Hong ,  Chen-Chiu Hsue

发明人： Chih-Hung Lin ,  Hwi-Huang Chen ,  Gary Hong ,  Chen-Chiu Hsue

IPC分类号： H01L21/336 ,  H01L21/8247

CPC分类号： H01L29/66825

摘要： A flash memory cell is fabricated by forming a lightly-doped region with only an implantation procedure to avoid lateral diffusion resulting from an increased overlap between the source region and gate as well as a short channel effect, while surrounding the source region with the lightly-doped region to thereby increase the breakdown voltage between the source region and the substrate.

摘要翻译： 闪存单元是通过仅通过注入步骤形成轻掺杂区域来制造的，以避免由于源区和栅极之间的重叠增加而产生的横向扩散以及短沟道效应，同时围绕源极区域， 从而增加源极区域和衬底之间的击穿电压。

公开(公告)号：US11646149B2

公开(公告)日：2023-05-09

申请号：US16792273

申请日：2020-02-16

申请人： Chih-Hung Lin ,  Kun-Chuan Chang

发明人： Chih-Hung Lin ,  Kun-Chuan Chang

IPC分类号： H01F27/28 ,  H01F27/06 ,  H01F27/24

CPC分类号： H01F27/2823 ,  H01F27/06 ,  H01F27/24

摘要： A coil module includes a first coil set; a second coil set, including a first coil body, a second coil body and an insulative separator disposed between the first coil body and the second coil body, the separator having an adopting hole, the first coil body having an open winding surrounding the adapting hole and fixed on a side of the separator, the second coil body having an open winding surrounding the adapting hole and fixed on another side of the separator; and a coil base sheathing the second coil set with exposing the adopting hole. The first coil set surrounds the adopting hole and is fixed on the coil base to form a coil module.

公开(公告)号：USD924658S1

公开(公告)日：2021-07-13

申请号：US29715566

申请日：2019-12-03

申请人： Chih-Hung Lin

设计人： Chih-Hung Lin

公开(公告)号：US08546871B2

公开(公告)日：2013-10-01

申请号：US13177520

申请日：2011-07-06

申请人： Chi-Cheng Huang ,  Ping-Chia Shih ,  Chih-Ming Wang ,  Chun-Sung Huang ,  Hsiang-Chen Lee ,  Chih-Hung Lin ,  Yau-Kae Sheu

发明人： Chi-Cheng Huang ,  Ping-Chia Shih ,  Chih-Ming Wang ,  Chun-Sung Huang ,  Hsiang-Chen Lee ,  Chih-Hung Lin ,  Yau-Kae Sheu

IPC分类号： H01L29/792

CPC分类号： H01L29/7923 ,  H01L29/66833

摘要： A non-volatile memory cell includes a substrate, two charge trapping structures, a gate oxide layer, a gate and two doping regions. The charge trapping structures are disposed on the substrate separately. The gate oxide layer is disposed on the substrate between the two charge trapping structures. The gate is disposed on the gate oxide layer and the charge trapping structures, wherein the charge trapping structures protrude from two sides of the gate. The doping regions are disposed in the substrate at two sides of the gate.

摘要翻译： 非易失性存储单元包括衬底，两个电荷俘获结构，栅极氧化层，栅极和两个掺杂区域。 电荷捕获结构分别设置在基板上。 栅极氧化层设置在两个电荷俘获结构之间的衬底上。 栅极设置在栅极氧化物层和电荷捕获结构上，其中电荷捕获结构从栅极的两侧突出。 掺杂区域设置在栅极两侧的衬底中。

公开(公告)号：US08458785B2

公开(公告)日：2013-06-04

申请号：US12960056

申请日：2010-12-03

申请人： Chih-Hung Lin ,  Chin-Wei Tien ,  Sheng-Hao Wang

发明人： Chih-Hung Lin ,  Chin-Wei Tien ,  Sheng-Hao Wang

IPC分类号： G06F15/16

CPC分类号： H04L63/1408 ,  G06F21/53 ,  H04L63/0236

摘要： An information security protection host is provided. The information security protection host comprises a network interface and a virtual machine monitor (VMM) device. The network interface is connected to a computer network and is configured to receive a first packet. The VMM device is configured to run a first operating system, wherein the first operating system provides a first network service. The VMM device is further configured to provide a first operating system information of the first operating system and a first network service information of the first network service instantaneously so as to determine the security of the first packet.

摘要翻译： 提供信息安全保护主机。 信息安全保护主机包括网络接口和虚拟机监视器（VMM）设备。 网络接口连接到计算机网络，并被配置为接收第一分组。 VMM设备被配置为运行第一操作系统，其中第一操作系统提供第一网络服务。 VMM设备还被配置为立即提供第一操作系统的第一操作系统信息和第一网络服务的第一网络服务信息，以便确定第一分组的安全性。

公开(公告)号：US20130067470A1

公开(公告)日：2013-03-14

申请号：US13287650

申请日：2011-11-02

申请人： Zhi-Wei Chen ,  Chia-Wei Tien ,  Chin-Wei Tien ,  Chih-Hung Lin

发明人： Zhi-Wei Chen ,  Chia-Wei Tien ,  Chin-Wei Tien ,  Chih-Hung Lin

IPC分类号： G06F9/455

CPC分类号： G06F21/53 ,  G06F9/45558 ,  G06F11/3093 ,  G06F2009/45587 ,  G06F2201/815 ,  G06F2201/865

摘要： A virtual machine monitoring method used in a virtual machine monitoring system is provided. The virtual machine monitoring method includes retrieving a hypercall transmitted from one of a plurality of virtual machines to a hypervisor of a virtual machine monitoring system, wherein the hypercall is used for establishing a channel between a source virtual machine and a target virtual machine. A central control virtual machine ID information in the hypervisor is retrieved. A type of the channel established by the hypercall is determined according to the central control virtual machine ID information and channel-establishing information corresponding to the hypercall. When the channel is a private channel that is not related to a central control virtual machine of the virtual machines, a security module is used to monitor the private channel.

摘要翻译： 提供了虚拟机监控系统中使用的虚拟机监控方法。 所述虚拟机监视方法包括检索从多个虚拟机中的一个发送到虚拟机监视系统的管理程序的超级呼叫，其中，所述超级呼叫用于在源虚拟机和目标虚拟机之间建立通道。 检索管理程序中的中央控制虚拟机ID信息。 根据中心控制虚拟机ID信息和对应于该超级呼叫的信道建立信息来确定由超级呼叫建立的信道类型。 当信道是与虚拟机的中央控制虚拟机无关的专用信道时，使用安全模块来监视专用信道。

公开(公告)号：US20130009232A1

公开(公告)日：2013-01-10

申请号：US13177520

申请日：2011-07-06

申请人： Chi-Cheng Huang ,  Ping-Chia Shih ,  Chih-Ming Wang ,  Chun-Sung Huang ,  Hsiang-Chen Lee ,  Chih-Hung Lin ,  Yau-Kae Sheu

发明人： Chi-Cheng Huang ,  Ping-Chia Shih ,  Chih-Ming Wang ,  Chun-Sung Huang ,  Hsiang-Chen Lee ,  Chih-Hung Lin ,  Yau-Kae Sheu

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L29/7923 ,  H01L29/66833

摘要： A non-volatile memory cell includes a substrate, two charge trapping structures, a gate oxide layer, a gate and two doping regions. The charge trapping structures are disposed on the substrate separately. The gate oxide layer is disposed on the substrate between the two charge trapping structures. The gate is disposed on the gate oxide layer and the charge trapping structures, wherein the charge trapping structures protrude from two sides of the gate. The doping regions are disposed in the substrate at two sides of the gate.

摘要翻译： 非易失性存储单元包括衬底，两个电荷俘获结构，栅极氧化层，栅极和两个掺杂区域。 电荷捕获结构分别设置在基板上。 栅极氧化层设置在两个电荷俘获结构之间的衬底上。 栅极设置在栅极氧化物层和电荷捕获结构上，其中电荷捕获结构从栅极的两侧突出。 掺杂区域设置在栅极两侧的衬底中。