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51.发明授权Manufacturing method of radiation detecting apparatus, and radiation detecting apparatus and radiation imaging system 有权放射线检测装置的制造方法以及放射线检测装置和放射线成像系统公开(公告)号：US08440977B2
公开(公告)日：2013-05-14
申请号：US12676352
申请日：2008-11-04
IPC分类号： H01L27/146
CPC分类号： H01L27/14663
摘要： The object of the invention is to realize a light radiation-detecting apparatus including a step of preparing a matrix array including a substrate, an insulating layer arranged on the substrate, a plurality of pixels arranged on the insulating layer, wherein the pixel includes a conversion element converting an incident radiation into an electric signal, and connection electrode arranged at a periphery of the plurality of pixels, fixing a flexible supporting member for covering the plurality of pixels to the matrix array at a side opposite to the substrate, and releasing the substrate from the matrix array.
摘要翻译： 本发明的目的是实现一种光辐射检测装置，包括准备包括衬底，布置在衬底上的绝缘层，布置在绝缘层上的多个像素的矩阵阵列的步骤，其中像素包括转换 元件将入射辐射转换为电信号，以及连接电极，布置在多个像素的周围，将与多个像素覆盖的柔性支撑部件固定在与基板相对的一侧的矩阵阵列，并且释放基板 从矩阵数组。
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公开(公告)号：US08154641B2
公开(公告)日：2012-04-10
申请号：US12245391
申请日：2008-10-03
CPC分类号： H04N5/32 , H01L27/14603 , H01L27/14658
摘要： A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.
摘要翻译： 根据本发明的固态图像拾取装置具有多个光电转换元件和多个开关元件。 光电转换元件形成在至少一个开关元件上方，并且屏蔽电极层设置在开关元件和光电转换元件之间。 此外，根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件，并且具有形成在一个或多个开关元件上方的辐射转换层和屏蔽电极 层之间设置在开关元件和辐射转换层之间。
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公开(公告)号：US20120032088A1
公开(公告)日：2012-02-09
申请号：US13195535
申请日：2011-08-01
申请人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe , Jun Kawanabe , Kentaro Fujiyoshi , Hiroshi Wayama
发明人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe , Jun Kawanabe , Kentaro Fujiyoshi , Hiroshi Wayama
CPC分类号： G01T1/242 , G01T1/24 , H01L27/14636 , H01L27/14663 , H01L31/113 , H04N5/32
摘要： A stacked-type detection apparatus including a plurality of pixels arranged at small intervals is configured to have low capacitance associated with signal lines and/or driving lines. With this novel configuration, small time constant and high-speed driving capability can be achieved in the signal lines and/or driving lines. The plurality of pixels in the detection apparatus are arranged in a row direction and a column direction on an insulating substrate. Each pixel includes a conversion element and a switch element, the conversion element is disposed above the switch element. A driving line disposed below the conversion elements is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. The signal line includes a conductive layer embedded in an insulating member, the insulating member is disposed in a layer lower than an uppermost surface portion of the driving line.
摘要翻译： 包括以小间隔排列的多个像素的层叠型检测装置被配置为具有与信号线和/或驱动线相关联的低电容。 利用这种新颖的结构，可以在信号线路和/或驱动线路中实现小的时间常数和高速驱动能力。 检测装置中的多个像素在绝缘基板上排列成行方向和列方向。 每个像素包括转换元件和开关元件，转换元件设置在开关元件上方。 设置在转换元件下方的驱动线连接到沿行方向布置的开关元件，并且信号线连接到沿列方向布置的开关元件。 信号线包括嵌入在绝缘构件中的导电层，绝缘构件设置在比驱动线的最上表面部分低的层中。
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公开(公告)号：US08084745B2
公开(公告)日：2011-12-27
申请号：US13010226
申请日：2011-01-20
IPC分类号： G01T1/24
CPC分类号： G01T1/241 , H01L27/14632 , H01L27/14658 , H01L27/14659 , H01L27/14663
摘要： A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.
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55.发明授权公开(公告)号：US07923695B2
公开(公告)日：2011-04-12
申请号：US12349733
申请日：2009-01-07
CPC分类号： H04N5/3745 , H01L27/14632 , H01L27/14658 , H01L27/14663 , H04N5/35527
摘要： Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.
摘要翻译： 灵敏度可自由地变化为与拍摄模式相对应的灵敏度，并且静止图像拍摄和例如在暴露于辐射的剂量中彼此大不相同并且在所需灵敏度上彼此不同的动态图像拍摄中， 进行，以满足这一要求。 TFT21的源极或漏极通过信号线14a和IC5连接到信号输出电路3. TFT 23的源极/漏极通过信号线14b连接到信号输出电路3，并且 因此，在每个像素6中，当读出信号时，信号线14a和14b中的任何一个可以自由地选择。
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公开(公告)号：US07858947B2
公开(公告)日：2010-12-28
申请号：US12474404
申请日：2009-05-29
IPC分类号： H01L27/146 , G01T1/24 , G01T1/26
CPC分类号： H01L27/14609 , H01L27/14636 , H01L27/14676
摘要： To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.
摘要翻译： 为了改善传感器复位方法，从而实现读取运动图像的高速率，本发明提供一种图像拾取装置和放射线图像拾取装置，包括：沿行和列方向排列在基板上的多个像素，每个 像素，具有转换元件和转印开关元件; 在行方向上与多个所述转印开关元件连接的驱动配线; 以及在行方向上连接到多个转换元件的转换元件布线，其中复位开关元件设置在转换元件布线和用于提供用于复位转换元件的复位电压的复位布线之间，偏置开关元件 设置在转换元件布线和用于提供用于操作转换元件的偏置电压的偏置布线之间。
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57.发明授权Imaging apparatus, radiation imaging apparatus, and manufacturing methods therefor 有权成像装置，放射线成像装置及其制造方法公开(公告)号：US07723136B2
公开(公告)日：2010-05-25
申请号：US12273602
申请日：2008-11-19
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/1462 , H01L27/14632 , H01L27/14665 , H01L27/14685 , H01L27/14687 , H01L27/14692
摘要： An imaging apparatus is provided in which a plurality of pixels, each having a conversion element and a thin-film transistor, are arranged in a two-dimensional fashion on an insulating substrate; the photoelectric conversion element is arranged over the thin-film transistor, with an insulating film, which serves as an interlayer insulating film, inserted between the conversion element and the thin-film transistor; and by way of a contact hole portion provided in the insulating film, the source electrode or the drain electrode of the thin-film transistor and the photoelectric conversion element are connected with each other. The imaging apparatus has a pixel in which the contact hole portion is removed through a laser-beam irradiation so that the connection portion between the conversion element and a conductive layer, which serves as the source electrode or the drain electrode of the thin-film transistor, is discontinued.
摘要翻译： 提供了一种成像装置，其中具有转换元件和薄膜晶体管的多个像素以二维方式布置在绝缘基板上; 光电转换元件布置在薄膜晶体管的上方，并且插入在转换元件和薄膜晶体管之间的绝缘膜，其用作层间绝缘膜; 并且通过设置在绝缘膜中的接触孔部分，薄膜晶体管的源电极或漏电极和光电转换元件彼此连接。 成像装置具有像素，其中通过激光束照射去除接触孔部分，使得转换元件和用作薄膜晶体管的源电极或漏电极的导电层之间的连接部分 ，停产。
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公开(公告)号：US20100001194A1
公开(公告)日：2010-01-07
申请号：US12493776
申请日：2009-06-29
IPC分类号： G01T1/24
CPC分类号： G01T1/2018
摘要： A radiation detection apparatus comprises a plurality of pixels each including a conversion element which converts incident radiation into a charge, a switching element which transfers the charge, and an interlayer insulation film disposed between the conversion element and the switching element, a gate line to drive the switching element, and a signal line located to intersect with the gate line and configured to read out the charge transferred from the switching element, wherein Ca≧ε0×ε×S/d and 7d≦P/2 is satisfied, where P is a pixel pitch, Ca is a sum total of coupling capacitances between the signal line and the gate line, S is an overlapping area of the signal line and the conversion element, d is a thickness of the interlayer insulation film, ε is a relative dielectric constant of the interlayer insulation film, and ε0 is a vacuum dielectric constant.
摘要翻译： 辐射检测装置包括多个像素，每个像素包括将入射辐射转换为电荷的转换元件，传送电荷的开关元件和设置在转换元件和开关元件之间的层间绝缘膜，驱动栅极线 所述开关元件和位于与所述栅极线相交并且被配置为读出从所述开关元件传送的电荷的信号线，其中满足Ca> = epsilonxSexS / d和7d <= P / 2，其中P是像素 间距，Ca是信号线和栅极线之间的耦合电容的总和，S是信号线和转换元件的重叠面积，d是层间绝缘膜的厚度，ε是相对介电常数 层间绝缘膜，ε0为真空介电常数。
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公开(公告)号：US07642517B2
公开(公告)日：2010-01-05
申请号：US12210839
申请日：2008-09-15
IPC分类号： G01T1/24 , H01L25/065
CPC分类号： H01L27/14643 , G01T1/2018 , G01T1/24 , H01L27/14603 , H01L27/14632 , H01L27/14663 , H01L27/14692 , H01L31/105
摘要： A radiation imaging apparatus has a pixel region arranged on a substrate. Arranged in a matrix pattern in the pixel region are pixels, each pixel including a conversion element which converts radiation to electrical charges, and a switching element which is connected to the conversion element therein. The radiation imaging apparatus has, in a region outside the pixel region of the substrate, an intersection at which a signal line connected to the switching element and a bias line connected to the conversion element intersects. At the intersection, a semiconductor layer is arranged between the signal line and the bias line, and a carrier blocking portion is arranged between the semiconductor layer and the signal line.
摘要翻译： 放射线成像装置具有布置在基板上的像素区域。 在像素区域中以矩阵图案排列的是像素，每个像素包括将辐射转换成电荷的转换元件，以及连接到转换元件的开关元件。 放射线摄像装置在基板的像素区域外的区域中具有与开关元件连接的信号线和与转换元件连接的偏置线交叉的交点。 在交叉点处，在信号线和偏置线之间设置半导体层，并且在半导体层和信号线之间配置载流子阻挡部。
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公开(公告)号：US07468531B2
公开(公告)日：2008-12-23
申请号：US11625412
申请日：2007-01-22
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/1462 , H01L27/14632 , H01L27/14665 , H01L27/14685 , H01L27/14687 , H01L27/14692
摘要： An imaging apparatus is provided in which a plurality of pixels, each having a conversion element and a thin-film transistor, are arranged in a two-dimensional fashion on an insulating substrate; the photoelectric conversion element is arranged over the thin-film transistor, with an insulating film, which serves as an interlayer insulating film, inserted between the conversion element and the thin-film transistor; and by way of a contact hole portion provided in the insulating film, the source electrode or the drain electrode of the thin-film transistor and the photoelectric conversion element are connected with each other. The imaging apparatus has a pixel in which the contact hole portion is removed through a laser-beam irradiation so that the connection portion between the conversion element and a conductive layer, which serves as the source electrode or the drain electrode of the thin-film transistor, is discontinued.
摘要翻译： 提供了一种成像装置，其中具有转换元件和薄膜晶体管的多个像素以二维方式布置在绝缘基板上; 光电转换元件布置在薄膜晶体管的上方，并且插入在转换元件和薄膜晶体管之间的绝缘膜，其用作层间绝缘膜; 并且通过设置在绝缘膜中的接触孔部分，薄膜晶体管的源电极或漏电极和光电转换元件彼此连接。 成像装置具有像素，其中通过激光束照射去除接触孔部分，使得转换元件和用作薄膜晶体管的源电极或漏电极的导电层之间的连接部分 ，停产。
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