Abstract:
A driving apparatus and a driving method for an electron emission device include a polarity operator for receiving an external video data signal and a horizontal synchronization signal, and generating a polarity control signal in response to the horizontal synchronization signal. The apparatus further includes a data inverter for selectively inverting video data output from the polarity operator, a serial-parallel converter for converting video data output from the data inverter into parallel data, a pulse width modulator for modulating a pulse width of the parallel data output from the serial-parallel converter, and a polarity controller for selectively inverting a signal output from the pulse width modulator.
Abstract:
A semiconductor device includes a semiconductor substrate having a first conductivity type and having an upper portion, a pair of bit lines extending in a first direction and doped with an impurity of a second conductivity type opposite to the first conductivity type and spaced from one another in the upper portion of the semiconductor substrate, a first line formed between the pair of bit lines having a plurality of alternating recessed device isolation regions and channel regions, with each of the channel regions contacting each bit line of the at least one pair of bit lines, and word lines formed at right angles to the first lines and covering the channel regions.
Abstract:
Semiconductor memory devices include a semiconductor substrate and a plurality of semiconductor material pillars in a spaced relationship on the semiconductor substrate. Respective surrounding gate electrodes surround ones of the pillars. A first source/drain region is in the semiconductor substrate between adjacent ones of the pillars and a second source/drain region is in an upper portion of at least one of the adjacent pillars. A buried bit line is in the first source/drain region and electrically coupled to the first source/drain region and a storage node electrode is on the upper portion of the at least one of the adjacent pillars and electrically contacting with the second source/drain region.
Abstract:
A semiconductor device may include a tubular channel pattern vertically extending from a semiconductor substrate. A gate insulation layer may be provided on faces exposed through the channel pattern. A gate electrode may be provided on the gate insulation layer. The gate electrode may fill the channel pattern. A conductive region, which may serve as lower source/drain regions, may be formed at a surface portion of the semiconductor substrate. The conductive region may contact a lower portion of the channel pattern. A conductive pattern, which may serve as upper source/drain regions, may horizontally extend from an upper portion of the channel pattern.
Abstract:
A method of processing input/output (I/O) in a storage device includes adjusting a read anticipation time based on a change of a resource management status related to operations of the storage device and performing an I/O processing operation at the storage device based on the adjusted read anticipation time. The I/O processing operation is performed to postpone an operation regarding a program command and perform a read command at higher priority than a write command at the storage device in a period from completion of a read operation at the storage device until the read anticipation time has elapsed.
Abstract:
A method of forming fine patterns for a semiconductor device includes providing a substrate with a first region and a second region, forming a conductive layer on the substrate, the conductive layer including a plate portion covering the first region and first protruding portions extending from the plate portion in a first direction and covering a portion of the second region, forming first mask patterns on the conductive layer, the first mask patterns extending in the first direction and being spaced apart from each other in a second direction crossing the first direction, forming a second mask pattern on the second region to cover the first protruding portions, and patterning the conductive layer using the first and second mask patterns as an etch mask to form conductive patterns. In plan view, each of the first protruding portions is overlapped with a corresponding one of the first mask patterns.
Abstract:
A memory apparatus and an operation of the memory apparatus which allow quick booting are provided. The memory apparatus includes a volatile memory, a non-volatile memory, and a memory control unit to control input/output of data stored in the volatile memory and the non-volatile memory. The memory control unit restores data, according to a control command input from outside of the memory apparatus, from the non-volatile memory to the volatile memory in an on-demand fashion during booting.
Abstract:
A method of operating a file system in a host configured to store write data in a data storage device including a first region and a second region is disclosed, and includes; receiving a write data request for write data associated with a file, classifying the write data as hot data or cold data using file meta data for the file, and if the write data is classified as hot data, storing the write data in the first region, and otherwise if the write data is classified as cold data storing the write data in the second region.
Abstract:
A method of operating a file system in a host configured to store write data in a data storage device including a first region and a second region is disclosed, and includes; receiving a write data request for write data associated with a file, classifying the write data as hot data or cold data using file meta data for the file, and if the write data is classified as hot data, storing the write data in the first region, and otherwise if the write data is classified as cold data storing the write data in the second region.
Abstract:
Semiconductor memory devices include a semiconductor substrate and a plurality of semiconductor material pillars in a spaced relationship on the semiconductor substrate. Respective surrounding gate electrodes surround ones of the pillars. A first source/drain region is in the semiconductor substrate between adjacent ones of the pillars and a second source/drain region is in an upper portion of at least one of the adjacent pillars. A buried bit line is in the first source/drain region and electrically coupled to the first source/drain region and a storage node electrode is on the upper portion of the at least one of the adjacent pillars and electrically contacting with the second source/drain region.