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51.发明授权Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure 有权具有导电缓冲层间结构的碳化硅衬底上的III族氮化物光子器件公开(公告)号：US06492193B1
公开(公告)日：2002-12-10
申请号：US09718958
申请日：2000-11-22
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02642
摘要： An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
摘要翻译： 公开了一种具有III族氮化物有源层的光电器件，其包括碳化硅衬底; 具有III族氮化物活性层的光电二极管; 在碳化硅衬底和光电二极管之间选自氮化镓和氮化镓镓的缓冲结构; 以及应力吸收结构，其包括缓冲结构的晶体结构内的多个预定的应力消除区域，使得在缓冲结构中发生的应力诱导的裂纹发生在缓冲结构中的预定区域而不是其他地方。
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52.发明授权Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure 失效具有导电缓冲层间结构的碳化硅衬底上的III族氮化物光子器件公开(公告)号：US06201262B1
公开(公告)日：2001-03-13
申请号：US08944547
申请日：1997-10-07
IPC分类号： H01L310312
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02642
摘要： An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
摘要翻译： 公开了一种具有III族氮化物有源层的光电器件，其包括碳化硅衬底; 具有III族氮化物活性层的光电二极管; 在碳化硅衬底和光电二极管之间选自氮化镓和氮化镓镓的缓冲结构; 以及应力吸收结构，其包括缓冲结构的晶体结构内的多个预定的应力消除区域，使得在缓冲结构中发生的应力诱导的裂纹发生在缓冲结构中的预定区域而不是其他地方。
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53.发明授权
公开(公告)号：US5119540A
公开(公告)日：1992-06-09
申请号：US558196
申请日：1990-07-24
CPC分类号： C30B25/12 , C30B25/02 , C30B29/36 , Y10T428/131
摘要： The invention is a method, and associated apparatus and product, of forming extremely pure epitaxial layers of silicon carbide by reducing the carrier concentration of residual nitrogen in silicon carbide formed by chemical vapor deposition processes. The method comprises placing a substrate upon which an epitaxial layer of silicon carbide will form upon a susceptor, and in which the susceptor is formed of a material that will not generate undesired nitrogen-containing out gases at the temperatures at which chemical vapor deposition of silicon carbide will take place from appropriate source gases. The substrate is heated to a temperature at which chemical vapor deposition of silicon carbide will take place from appropriate source gases by inductively heating the susceptor using an induction frequency that heats the susceptor material. Silicon-containing and carbon-containing source gases are then introduced that will form an epitaxial layer of silicon carbide upon the heated substrate.
摘要翻译： 本发明是通过降低通过化学气相沉积工艺形成的碳化硅中的残留氮的载流子浓度，形成极其纯的碳化硅外延层的方法和相关的装置和产品。 该方法包括放置一个衬底，碳化硅外延层将在其上形成在感受体上，并且其中感受体由在硅化学气相沉积的温度下不会产生不需要的含氮气体的材料形成 碳化物将从适当的源气体发生。 将衬底加热到通过使用加热感受体材料的感应频率感应加热感受器从适当的源气体发生碳化硅的化学气相沉积的温度。 然后引入含硅和含碳源气体，其将在加热的基底上形成碳化硅的外延层。
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54.发明授权
公开(公告)号：US4912063A
公开(公告)日：1990-03-27
申请号：US113921
申请日：1987-10-26
IPC分类号： H01L21/365
CPC分类号： H01L21/0262 , H01L21/02378 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02658 , Y10S117/904 , Y10S148/148
摘要： Device quality thin films of Beta-SiC are epitaxially grown on substrates of Alpha-Sic.
摘要翻译： β-SiC的器件质量薄膜在Alpha-Sic的底物上外延生长。
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