公开(公告)号：US20130277660A1

公开(公告)日：2013-10-24

申请号：US13922785

申请日：2013-06-20

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/45

摘要： An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

摘要翻译： 一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。 薄膜晶体管包括形成在基板上的栅电极，形成在基板上并覆盖栅电极的栅极绝缘层，形成在栅绝缘层上并覆盖栅电极的氧化物半导体层，形成在源极上的钛层 区域和漏区，以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。 钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻，在它们之间形成稳定的界面结，并阻止铜的扩散。

公开(公告)号：US08436342B2

公开(公告)日：2013-05-07

申请号：US12654938

申请日：2010-01-08

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L2251/305

摘要： Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

摘要翻译： 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括具有以第一氧化物半导体层和第二氧化物半导体层堆叠的结构形成的激活层的驱动单元的薄膜晶体管，具有像素单元的薄膜晶体管 由第二氧化物半导体层形成的激活层和耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在第一氧化物半导体层上的沟道，其具有比第二氧化物半导体层更高的载流子浓度，具有高电荷迁移率，并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层，具有稳定且均匀的功能特性。

公开(公告)号：US08420457B2

公开(公告)日：2013-04-16

申请号：US12382341

申请日：2009-03-13

申请人： Min-Kyu Kim ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong

发明人： Min-Kyu Kim ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong

IPC分类号： H01L21/00

CPC分类号： H01L29/7869

摘要： A thin film transistor, including a transparent channel pattern, a transparent gate insulating layer in contact with the channel pattern, a passivation film pattern disposed on the channel pattern, a source/drain coupled to the channel pattern through a via hole in the passivation film pattern, and a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern, wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG).

公开(公告)号：US20120270409A1

公开(公告)日：2012-10-25

申请号：US13437305

申请日：2012-04-02

申请人： Hyungjun Kim ,  Woo-Hee Kim ,  Min-Kyu Kim ,  Steven Hung ,  Atif Noori ,  David Thompson ,  Jeffrey W. Anthis

发明人： Hyungjun Kim ,  Woo-Hee Kim ,  Min-Kyu Kim ,  Steven Hung ,  Atif Noori ,  David Thompson ,  Jeffrey W. Anthis

IPC分类号： H01L21/314

CPC分类号： H01L21/02189 ,  C23C16/40 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L29/517

摘要： Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.

摘要翻译： 提供了在衬底上沉积含有高k电介质膜的铈掺杂铪的方法。 具体方法的试剂包括四氯化铪，铈和水的有机金属络合物。

公开(公告)号：US08254169B2

公开(公告)日：2012-08-28

申请号：US12877539

申请日：2010-09-08

申请人： Min-Kyu Kim

发明人： Min-Kyu Kim

IPC分类号： G11C11/34

CPC分类号： G06K19/0723

摘要： A smart card is foamed of a memory having light-sensing cells to sense externally supplied light and generate a detection signal in response to the externally supplied light being sensed by the light-sensing cells, and a reset control circuit generating a reset signal in response to the detection signal, the reset signal operating to reset the smart card.

摘要翻译： 智能卡是由具有光感测单元的存储器发泡的，用于感测外部供应的光并且响应于由感光单元感测到的外部供给的光而产生检测信号;以及复位控制电路，响应于该信号产生复位信号 对于检测信号，复位信号操作以复位智能卡。

公开(公告)号：US07994500B2

公开(公告)日：2011-08-09

申请号：US12424860

申请日：2009-04-16

申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

IPC分类号： H01L29/22

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止电荷俘获。

公开(公告)号：US20110140112A1

公开(公告)日：2011-06-16

申请号：US12881686

申请日：2010-09-14

申请人： Min-Kyu Kim ,  Jae-Wook Kang

发明人： Min-Kyu Kim ,  Jae-Wook Kang

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3248

摘要： An organic light emitting display and a method of manufacturing the same are disclosed. In one embodiment, the display includes a gate electrode formed over a substrate and an active layer electrically insulated from the gate electrode, wherein the gate electrode is closer to the substrate than the active layer. The display further includes i) a first gate insulating layer and a second gate insulating layer formed between the gate electrode and active layer so as to electrically insulate the active layer from the gate electrode and ii) source and drain electrodes each contacting the active layer.

摘要翻译： 公开了一种有机发光显示器及其制造方法。 在一个实施例中，显示器包括形成在衬底上的栅电极和与栅电极电绝缘的有源层，其中栅电极比有源层更靠近衬底。 显示器还包括i）形成在栅电极和有源层之间的第一栅极绝缘层和第二栅极绝缘层，以便使有源层与栅极电绝缘，以及ii）每个接触有源层的源极和漏极。

公开(公告)号：US20110140095A1

公开(公告)日：2011-06-16

申请号：US12873199

申请日：2010-08-31

申请人： Kwang-Suk Kim ,  Min-Kyu Kim

发明人： Kwang-Suk Kim ,  Min-Kyu Kim

IPC分类号： H01L29/22 ,  H01L21/336

CPC分类号： H01L29/7869

摘要： A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the oxide semiconductor layer has a Zn concentration gradient; and source and drain regions respectively formed on both sides of the oxide semiconductor layer and the gate insulating layer.

摘要翻译： 1.一种薄膜晶体管，包括：基板; 形成在所述基板上的栅电极; 形成在所述栅电极上的栅绝缘层和所述基板的露出部分; 形成在所述栅绝缘层上以对应于所述栅极的氧化物半导体层，并且包括HfInZnO基氧化物半导体，其中所述氧化物半导体层具有Zn浓度梯度; 以及分别形成在氧化物半导体层和栅极绝缘层的两侧上的源极和漏极区域。

公开(公告)号：US07748637B2

公开(公告)日：2010-07-06

申请号：US11985693

申请日：2007-11-16

申请人： Ji-Myung Na ,  Min-Kyu Kim

发明人： Ji-Myung Na ,  Min-Kyu Kim

IPC分类号： G06K19/06

CPC分类号： G06K19/07372

摘要： A smart card includes a plurality of function blocks, and a laser attack detector configured to detect an external laser attack on at least one of the plurality of function blocks. The laser attack detector may include a plurality of chain blocks connected in a chain configuration, and each of the chain blocks is configured to change the level of a detection value stored therein in response to an external laser attack.

摘要翻译： 智能卡包括多个功能块，激光攻击检测器被配置为检测多个功能块中的至少一个的外部激光攻击。 激光攻击检测器可以包括以链式配置连接的多个链块，并且每个链块被配置为响应于外部激光攻击改变存储在其中的检测值的电平。

公开(公告)号：US20090321732A1

公开(公告)日：2009-12-31

申请号：US12424860

申请日：2009-04-16

申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

IPC分类号： H01L29/22 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。