摘要:
Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a single-crystalline semiconductor substrate. A single-crystalline semiconductor plug extends through the inter-layer insulating layer, and a single-crystalline epitaxial semiconductor pattern is in contact with the single-crystalline semiconductor plug on the inter-layer insulating layer. The single-crystalline epitaxial semiconductor pattern is at least partially planarized to form a semiconductor body layer on the inter-layer insulating layer, and the semiconductor body layer is patterned to form a semiconductor body. As a result, the semiconductor body includes at least a portion of the single-crystalline epitaxial semiconductor pattern. Thus, the semiconductor body has an excellent single-crystalline structure. Semiconductor integrated circuits fabricated using the methods are also provided.
摘要:
Disclosure is a low loss optical fiber comprising: a core including an inner core portion, which includes pure silica and is positioned at a center of the low loss optical fiber, and an outer core portion which surrounds the inner core portion and includes silica doped with a refractive index controlling material and a clad for surrounding the core.
摘要:
Provided is a clock generator that includes a comparator in which characteristics of two input signals vary over time. A voltage controller, having a resistor and at least one constant current source, generates a direct current (DC) voltage proportional to an output current of the constant current source and a resistance value of the resistor. The comparator compares a ramp voltage generated by the voltage controller with the DC voltage.
摘要:
The effective performance metric and achieving method of a multi-user multiple-input multiple-output (MU-MIMO) communication system are provided. A number of feedback bits of channel information may be determined based on an effective spectral efficiency (ESE). The ESE may correspond to a metric of the throughput performance with respect to a total radio resource including an uplink radio resource and a downlink radio resource. User-scheduling may be based on the feedback information that is based on the ESE, and thus, the throughput performance of the communication system may be enhanced.
摘要:
Presented herein are methods, systems, devices, and computer-readable media for systems for dynamic management of data streams updating displays. Some of the embodiments herein generally relate to presenting video image data on an array of tiled display units, thereby allowing the display of much larger images than can be shown on a single display. Each display unit can include a video image display, a communication mechanism, such as a network interface card or wireless interface card, and a video image controller, such as a graphics card. Attached to the tiled display may be one or more user computers or other sources of video image data. A workstation may also be coupled to the tiled display and to the user computers. Each of the user computers can display data or images on the tiled display simultaneously. Since the tiled display is made up of multiple display units, the images from a single user computer may be on multiple, separate individual display units. The images from multiple user computers could also be shown on the same display unit and they may even overlap.
摘要:
A touch screen display device includes a common electrode, a base substrate disposed opposite to the common electrode, a display signal line formed on the base substrate, a plurality of pixel electrodes, a touch position sensing part formed between the base substrate and the pixel electrodes, the touch position sensing part sensing a change of electrostatic capacitance formed between the common electrode and the touch position sensing part, and a display layer disposed between the common electrode and the pixel electrodes. The display layer includes a plurality of micro capsules comprising positively charged pigment particles and negatively charged pigment particles.
摘要:
A thin film transistor array panel is provided, which includes a plurality of gate lines, a plurality of common electrodes, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer, a plurality of drain electrodes formed on the semiconductor layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes. Because the common electrodes are made of ITON, IZON, or a-ITON, or a double layer of ITO/ITON, IZO/IZON, or a-a-ITO/a-ITON, when H2 or SiH4 are injected to form a silicon nitride (SiNX) layer on the common electrodes, the opaque metal Sn or Zn is not produced on the surfaces of the common electrode.
摘要:
An apparatus and method for transmitting and/or receiving data in a closed-loop multi-antenna system, the method of receiving data including: acquiring CQIs of data streams by channel estimation of a received signal; selecting at least one CQI from among the acquired CQIs; calculating a common CQI using the acquired CQIs; generating feedback information with the at least one CQI, the common CQI, and an index of a data stream with the at least one CQI; and transmitting the feedback information to a transmitter.
摘要:
Display units which can be arranged to form a single arrayed display system, thereby allowing the display of much larger images than can be shown on a single display. Each display unit can include an image display, a communication mechanism, such as a network interface card or wireless interface card, and an image display module, such as a video card and an image processor. Each display module can be configured to selectively process and display portions of large digital images.
摘要:
A thin film transistor array panel is provided, which includes a substrate, a plurality of gate line formed on the substrate, a plurality of common electrodes having a transparent conductive layer on the substrate, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer and the gate insulating layer, a plurality of drain electrodes formed on the semiconductor layer and the gate insulating layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes. Because the common electrodes are made of ITON, IZON, or a-ITON, or a double layer of ITO/ITON, IZO/IZON, or a-a-ITO/a-ITON, when H2 or SiH4 are injected to form a silicon nitride (SiNX) layer on the common electrodes, the opaque metal Sn or Zn in which the metal component is reduced in the IZO, ITO, or a-ITO is not produced on the surfaces of the common electrode.