公开(公告)号：US20060205231A1

公开(公告)日：2006-09-14

申请号：US11368481

申请日：2006-03-07

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02271 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/515 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/76829

摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a carbon hydride gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field while stopping supply of the second process gas to the process field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field. The fourth step stops supply of the first to third process gases to the field.

摘要翻译： 通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体和含有碳的第三工艺气体的工艺领域中， 氢化物气体。 该方法交替地包括第一至第四步骤。 第一步骤是将第一和第三工艺气体供应到现场，同时停止向工艺场供应第二工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场提供第一和第三处理气体的同时，向现场供应第二处理气体。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US20060032443A1

公开(公告)日：2006-02-16

申请号：US11188736

申请日：2005-07-26

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

IPC分类号： C23C16/00

CPC分类号： C23C16/45531 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/507

摘要： An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

摘要翻译： 在目标衬底上通过CVD形成杂质掺杂的氮化硅或氧氮化物膜，在选择性地供给含有硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体的工艺领域中， 含有掺杂气体的第三工艺气体。 该方法交替地包括第一至第四步骤。 第一步向现场供应第一和第三工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场施加第一和第三处理气体的同时停止向现场供应第二处理气体，并且包括通过激励机构激励第二处理气体的激发周期。 第四步停止向现场供应第一至第三处理气体。