公开(公告)号：US20060032443A1

公开(公告)日：2006-02-16

申请号：US11188736

申请日：2005-07-26

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

IPC分类号： C23C16/00

CPC分类号： C23C16/45531 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/507

摘要： An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

摘要翻译： 在目标衬底上通过CVD形成杂质掺杂的氮化硅或氧氮化物膜，在选择性地供给含有硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体的工艺领域中， 含有掺杂气体的第三工艺气体。 该方法交替地包括第一至第四步骤。 第一步向现场供应第一和第三工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场施加第一和第三处理气体的同时停止向现场供应第二处理气体，并且包括通过激励机构激励第二处理气体的激发周期。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US07758920B2

公开(公告)日：2010-07-20

申请号：US11496436

申请日：2006-08-01

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： C23C16/4412 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.

摘要翻译： 通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体 由氮化，氮氧化和氧化气体组成。 该方法交替地包括第一至第四步骤。 第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。 通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。 第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

公开(公告)号：US07462571B2

公开(公告)日：2008-12-09

申请号：US11188736

申请日：2005-07-26

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

IPC分类号： H01L21/31

CPC分类号： C23C16/45531 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/507

摘要： An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

摘要翻译： 在目标衬底上通过CVD形成杂质掺杂的氮化硅或氧氮化物膜，在选择性地供给含有硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体的工艺领域中， 含有掺杂气体的第三工艺气体。 该方法交替地包括第一至第四步骤。 第一步向现场供应第一和第三工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场施加第一和第三处理气体的同时停止向现场供应第二处理气体，并且包括通过激励机构激励第二处理气体的激发周期。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US20070032047A1

公开(公告)日：2007-02-08

申请号：US11496436

申请日：2006-08-01

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

IPC分类号： C23C16/00 ,  G06F19/00 ,  H01L21/20

CPC分类号： C23C16/4412 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.

摘要翻译： 通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体 由氮化，氮氧化和氧化气体组成。 该方法交替地包括第一至第四步骤。 第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。 通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。 第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

公开(公告)号：US20060207504A1

公开(公告)日：2006-09-21

申请号：US11367339

申请日：2006-03-06

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

IPC分类号： C23C16/00

CPC分类号： C23C16/45512 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/509

摘要： A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

公开(公告)号：US08343594B2

公开(公告)日：2013-01-01

申请号：US12167270

申请日：2008-07-03

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

IPC分类号： H05H1/24

CPC分类号： C23C16/45512 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/509

摘要： A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

摘要翻译： 一种用于半导体工艺的成膜装置包括：配置成供给处理气体的工艺气体供给系统。 工艺气体供给系统包括配置成混合第一和第三处理气体以形成混合气体的气体混合罐;配置成将来自气体混合罐的混合气体供给到处理场的混合气体供应管线，第二工艺气体供应 电路，具有第二工艺气体供给管线，其被配置为在不通过所述气体混合罐的情况下将第二处理气体供给到所述处理场，以及分别设置在所述混合气体供给管线和所述第二处理气体供给管线上的第一和第二切换阀。 控制部分控制第一和第二切换阀的打开和关闭，以便将混合气体和第二处理气体交替地和脉冲地供给到处理场。

公开(公告)号：US20080274302A1

公开(公告)日：2008-11-06

申请号：US12167270

申请日：2008-07-03

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

IPC分类号： C23C16/448 ,  C23C16/34

CPC分类号： C23C16/45512 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/509

摘要： A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

摘要翻译： 一种用于半导体工艺的成膜装置包括：配置成供给处理气体的工艺气体供给系统。 工艺气体供给系统包括配置成混合第一和第三处理气体以形成混合气体的气体混合罐;配置成将来自气体混合罐的混合气体供给到处理场的混合气体供应管线，第二工艺气体供应 电路，具有第二工艺气体供给管线，其被配置为在不通过所述气体混合罐的情况下将第二处理气体供给到所述处理场，以及分别设置在所述混合气体供给管线和所述第二处理气体供给管线上的第一和第二切换阀。 控制部分控制第一和第二切换阀的打开和关闭，以便将混合气体和第二处理气体交替地和脉冲地供给到处理场。

公开(公告)号：US07959733B2

公开(公告)日：2011-06-14

申请号：US12504454

申请日：2009-07-16

申请人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

发明人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

IPC分类号： C23C16/00 ,  C30B28/14 ,  H01L21/00 ,  H01L21/22

CPC分类号： C23C16/24 ,  C23C16/45523 ,  Y10T117/1024

摘要： A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.

摘要翻译： 一种用于半导体工艺的成膜装置包括：源气体供应电路，用于向处理容器中提供用于在目标衬底上沉积薄膜的源气体;以及混合气体供应电路，向处理容器供应含有掺杂物质的混合气体 用于用杂质掺杂薄膜的气体和用于稀释掺杂气体的稀释气体。 混合气体供给回路包括：设置在处理容器外部的混合气体，将掺杂气体与稀释气体混合，形成混合气体，混合气体供给管路，将混合气体从气体混合罐供给到处理容器内; 用于将掺杂气体供应到气体混合罐中的掺杂气体供应回路，以及将稀释气体供应到气体混合罐中的稀释气体供给回路。

公开(公告)号：US20050282365A1

公开(公告)日：2005-12-22

申请号：US11155629

申请日：2005-06-20

申请人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

发明人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

IPC分类号： C23C16/00 ,  C23C16/24 ,  H01L21/26 ,  H01L21/42

CPC分类号： C23C16/24 ,  C23C16/45523 ,  Y10T117/1024

摘要： A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.

摘要翻译： 一种用于半导体工艺的成膜装置包括：源气体供应电路，用于向处理容器中提供用于在目标衬底上沉积薄膜的源气体;以及混合气体供应电路，向处理容器供应含有掺杂物质的混合气体 用于用杂质掺杂薄膜的气体和用于稀释掺杂气体的稀释气体。 混合气体供给回路包括：设置在处理容器外部的混合气体，将掺杂气体与稀释气体混合，形成混合气体，混合气体供给管路，将混合气体从气体混合罐供给到处理容器内; 用于将掺杂气体供应到气体混合罐中的掺杂气体供应回路，以及将稀释气体供应到气体混合罐中的稀释气体供给回路。

公开(公告)号：US20090275150A1

公开(公告)日：2009-11-05

申请号：US12504454

申请日：2009-07-16

申请人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

发明人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

IPC分类号： H01L21/66

CPC分类号： C23C16/24 ,  C23C16/45523 ,  Y10T117/1024

摘要： A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.

摘要翻译： 一种用于半导体工艺的成膜装置包括：源气体供应电路，用于向处理容器中提供用于在目标衬底上沉积薄膜的源气体;以及混合气体供应电路，向处理容器供应含有掺杂物质的混合气体 用于用杂质掺杂薄膜的气体和用于稀释掺杂气体的稀释气体。 混合气体供给回路包括：设置在处理容器外部的混合气体，将掺杂气体与稀释气体混合，形成混合气体，混合气体供给管路，将混合气体从气体混合罐供给到处理容器内; 用于将掺杂气体供应到气体混合罐中的掺杂气体供应回路，以及将稀释气体供应到气体混合罐中的稀释气体供给回路。