Oil-resistant rubber composition
    51.
    发明授权
    Oil-resistant rubber composition 失效
    耐油橡胶组合物

    公开(公告)号:US4761452A

    公开(公告)日:1988-08-02

    申请号:US883535

    申请日:1986-07-09

    摘要: A rubber composition capable of giving a highly oil-resistant vulcanizate with an organic peroxide as the vulcanizing agent is proposed. The composition is a blend of an EPM or EPDM rubber and an acrylic rubber loaded with a reinforcing filler, of which the latter rubber is a copolymer having at least two vinylsilyl groups in a molecule as the pendant groups introduced by the copolymerization of one or more acrylic monomers with a vinylsilyl-containing organosilicon compound having an aliphatically unsaturated group copolymerizable with the acrylic monomers in a molecule, such as CH.sub.2 .dbd.CH--CO--O--CH.sub.2 CH.sub.2 CH.sub.2 --Si-- and CH.sub.2 .dbd.CH--C.sub.6 H.sub.4 --Si--. The covulcanizate has the high mechanical strengths of the EPM or EPDM rubber and the high oil resistance of the acrylic rubber in combination.

    摘要翻译: 提出了能够以有机过氧化物作为硫化剂赋予高耐油硫化橡胶的橡胶组合物。 该组合物是EPM或EPDM橡胶和装载有增强填料的丙烯酸橡胶的共混物,其中后者橡胶是在分子中具有至少两个乙烯基甲硅烷基的共聚物,作为通过一个或多个 丙烯酸类单体与具有乙烯基甲硅烷基的有机硅化合物在分子中具有可与丙烯酸单体共聚的脂族不饱和基团,例如CH 2 = CH-CO-O-CH 2 CH 2 CH 2 -Si-和CH 2 = CH-C 6 H 4 -Si。 共硫化橡胶具有EPM或EPDM橡胶的高机械强度和丙烯酸橡胶的高耐油性组合。

    Semiconductor laser
    52.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号:US4546478A

    公开(公告)日:1985-10-08

    申请号:US614390

    申请日:1984-05-25

    摘要: A mounting of semiconductor laser chip on a heat sink or metal mount is improved so as to enable high accuracy of position and direction. A heat sink or metal mount, on which a semiconductor laser chip is mounted, comprises two parts, namely a main mount or larger portion and a sub-mount or smaller portion. The semiconductor laser chip is soldered by a solder layer on the sub-mount utilizing a microscope so as to assure an accurate position and an accurate direction with respect to the sub-mount. Then, the sub-mount is soldered on the main mount by a solder layer with an accurate relation both in position and direction by engaging a linear ridge as a first engaging means provided on the upper face of the main mount with a straight groove and a rear end face as a second engaging means, or by engaging a square recess as a first engaging means and the square bottom of the sub-mount as a second engaging means with each other. As a result of the above-mentioned structure, accurate position and direction of the semiconductor laser chip with respect to the mount is easily obtainable with a high yield.

    摘要翻译: 提高半导体激光芯片在散热片或金属安装座上的安装,以实现高精度的位置和方向。 安装有半导体激光芯片的散热器或金属安装件包括两部分,即主安装件或更大部分和副安装件或更小部件。 利用显微镜将半导体激光芯片通过焊接层焊接在子座上,以确保相对于子安装座的精确位置和准确的方向。 然后,通过将位于主要安装座的上表面上设置的第一接合装置的直线状脊线与直槽相啮合,通过焊接层将焊接层焊接在主安装座上,焊接层的位置和方向都精确, 后端面作为第二接合装置,或者通过将作为第一接合装置的方形凹槽和副安装座的方形底部彼此接合作为第二接合装置。 作为上述结构的结果,可以容易地以高产率获得半导体激光器芯片相对于安装座的精确位置和方向。

    Flame-retardant rubber composition
    53.
    发明授权
    Flame-retardant rubber composition 失效
    阻燃橡胶组合物

    公开(公告)号:US4533687A

    公开(公告)日:1985-08-06

    申请号:US575504

    申请日:1984-01-31

    摘要: The invention provides a highly flame-retardant polyolefin-based rubber composition free from the problem of the formation of toxic or corrosive gases and a large volume of smoke by burning of conventional flame-retardant rubber compositions impregnated with a large amount of a halogen-containing flame retardant agent. The inventive rubber composition comprises (a) a synthetic rubber of polyolefin type, (b) an organopolysiloxane resin which is preferably formed of monofunctional siloxane units and tetrafunctional siloxane units in a molar ratio of 0.6/1.0 to 2.0/1.0, (c) red phosphorus and (d) aluminum hydroxide or magnesium hydroxide in a specified proportion.

    摘要翻译: 本发明提供了一种高阻燃聚烯烃基橡胶组合物,其不含有形成有毒或腐蚀性气体和大量烟雾的问题,通过燃烧常规的含有大量含卤素的阻燃橡胶组合物 阻燃剂。 本发明的橡胶组合物包含(a)聚烯烃类合成橡胶,(b)优选由摩尔比为0.6 / 1.0至2.0 / 1.0的单官能硅氧烷单元和四官能硅氧烷单元形成的有机聚硅氧烷树脂,(c)红色 磷和(d)氢氧化铝或氢氧化镁以规定的比例。

    Method of making a semiconductor laser by liquid phase epitaxial growths
    54.
    发明授权
    Method of making a semiconductor laser by liquid phase epitaxial growths 失效
    通过液相外延生长制造半导体激光器的方法

    公开(公告)号:US4380861A

    公开(公告)日:1983-04-26

    申请号:US266134

    申请日:1981-05-21

    IPC分类号: H01S5/223 H01L21/208

    CPC分类号: H01S5/2238

    摘要: In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape,the improvement is that said substrate has a terrace part on its principle face,said active layer has two parallel bending parts defining a stripe shape active region facing said current injection region in between andsaid stripe shape active region is disposed with a specified angle to said principle face.

    摘要翻译: 在包括在半导体衬底上外延形成的有源层和限定条形电流注入区的至少限流层的半导体激光器中,改进之处在于,所述衬底在其原理面上具有露台部分,所述有源层 具有两个平行的弯曲部分,其限定面向所述电流注入区域的条状形状有源区域,并且所述条形形状有源区域以与所述原理面形成特定角度设置。

    Semiconductor laser
    55.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号:US4371967A

    公开(公告)日:1983-02-01

    申请号:US215665

    申请日:1980-12-12

    摘要: In a semiconductor laser which has epitaxial layers including an active layer on a semiconductor substrate, a buffer layer is formed neighboring the active layer, in order to prevent undesirable diffusion of a highly diffusing dopant (Zn) into the active layer from an adjacent layer such as the second clad layer. The buffer layer has the same conductivity as that of the adjacent layer, has a broader energy gap than the active layer, and the dopant of the buffer layer is less diffusing than that of the adjacent layer.

    摘要翻译: 在半导体衬底上具有包括有源层的外延层的半导体激光器中,形成与有源层相邻的缓冲层,以便防止高度扩散的掺杂​​剂(Zn)从相邻层(例如 作为第二包覆层。 缓冲层具有与相邻层相同的导电性,具有比有源层更宽的能隙,并且缓冲层的掺杂剂比相邻层的扩散更少。

    Heterostructure semiconductor device having a top layer etched to form a
groove to enable electrical contact with the lower layer
    57.
    发明授权
    Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer 失效
    异质结构半导体器件具有被蚀刻以形成凹槽的顶层以能够与下层电接触

    公开(公告)号:US4255755A

    公开(公告)日:1981-03-10

    申请号:US968924

    申请日:1978-12-13

    摘要: A semiconductor laser is made by sequential liquid-phase epitaxial growths on an n-type GaAs substrate, thereby sequentially forminga first layer of n-type GaAlAs,a second layer of n-type or p-type GaAs as active region,a third layer of p-type GaAlAs,said first to third layers forming a doublehetero structure,a fourth layer of p.sup.+ -type GaAs, anda fifth layer of n-type GaAlAs,by chemically etching the fifth layer, to form a groove or narrow window therein so as to expose a part of said fourth layer at the bottom of the groove, andby providing a metal electrode embedded in said groove.In the laser of the abovementioned construction, the fifth layer, instead of the conventional oxide film, serves as an isolation layer. However, the fifth layer, being an epitaxially grown GaAlAs layer, has better thermal conductivity than an oxide film. Therefore, when a suitable heat-sink means or heat-radiation means is provided thereon, a laser of good heat radiation characteristics is obtainable, enabling production of higher power continuous wave laser.The etching for forming the groove is easily made by chemically etching the desired layer by utilizing the difference in etching speed for different layers of hetero structure.

    摘要翻译: 半导体激光器通过在n型GaAs衬底上的顺序的液相外延生长制成,从而顺序地形成第一层n型GaAlAs,第二层n型或p型GaAs作为有源区,第三层 p型GaAlAs层,所述第一至第三层形成双重结构,第四层p +型GaAs和第五层n型GaAlAs,通过化学蚀刻第五层以形成凹槽或窄窗口 以便在槽的底部露出所述第四层的一部分,并且通过设置嵌入在所述槽中的金属电极。 在上述结构的激光器中,代替常规氧化膜的第五层用作隔离层。 然而,作为外延生长的GaAlAs层的第五层比氧化膜具有更好的热导率。 因此,当在其上设置合适的散热装置或热辐射装置时,可以获得具有良好散热特性的激光器,从而能够生产更高功率的连续波激光器。 通过利用异质结构的不同层的蚀刻速度的差异,通过化学蚀刻所需层来容易地形成用于形成凹槽的蚀刻。

    Silicon-containing polybutadiene derivatives and method for the
preparation thereof
    58.
    发明授权
    Silicon-containing polybutadiene derivatives and method for the preparation thereof 失效
    含硅聚丁二烯衍生物及其制备方法

    公开(公告)号:US4230815A

    公开(公告)日:1980-10-28

    申请号:US926298

    申请日:1978-07-20

    IPC分类号: C08F8/00 C08C19/25 C08F8/42

    CPC分类号: C08C19/25

    摘要: Novel silicon-containing derivatives of polybutadiene or copolymers of butadiene with other copolymerizable monomer or monomers in which organosilicon-containing groups are bonded to the carbon atoms in the main chain of the butadiene polymers through the carbon-silicon linkages. These derivatives of butadiene polymers are produced by the addition reaction of an organosilicon compound having one hydrogen atom directly bonded to the silicon atom in the molecule to the double bonds in the butadiene polymers. They have a good fluidity, a small temperature dependency of viscosity, an excellent thermal stability and a high anti-oxidation resistance, as well as a good compatibility with siliceous fillers which are added to give improved workability and transparency to the compositions. The compositions to which a crosslinking agent and a curing catalyst are added can be cured into a rubber-like elastomer having excellent properties suitable for applications in various fields.

    摘要翻译: 聚丁二烯的新型含硅衍生物或丁二烯与其它可共聚单体或单体的共聚物,其中含有机硅的基团通过碳 - 硅键连接到丁二烯聚合物主链中的碳原子上。 丁二烯聚合物的这些衍生物通过具有一个与分子中的硅原子直接键合的氢原子的有机硅化合物与丁二烯聚合物中的双键进行加成反应来制备。 它们具有良好的流动性,较小的粘度温度依赖性,优异的热稳定性和高的抗氧化性,以及与添加以提供组合物改进的可加工性和透明度的硅质填料的良好相容性。 加入交联剂和固化催化剂的组合物可以固化成具有优异性能的橡胶状弹性体,适用于各种领域。

    Solidstate light-emitting device
    60.
    发明授权
    Solidstate light-emitting device 失效
    固态发光装置

    公开(公告)号:US4149175A

    公开(公告)日:1979-04-10

    申请号:US873522

    申请日:1978-01-30

    摘要: A mesa region of a stripe geometry is formed by mesa-etching a surface of a GaAs crystal substrate, forming a crystal layer of higher resistivity than the abovementioned crystal substrate so as to fill the abovementioned mesa-etched recesses in a manner that the stripe shaped mesa region is buried in the higher resistivity regions making top faces of the mesa region and the higher resistivity regions flush with each other, then forming, on the abovementioned flush surface, several epitaxial growth regions of semiconductor crystal including a light emitting region, for instance, an active region for lasing, subsequently forming contact isolation region having an opening of the stripe geometry corresponding to and above said mesa region. The current flow in the active region is confined in a narrow stripe region.

    摘要翻译: 通过对GaAs晶体基板的表面进行台面蚀刻来形成条纹几何形状的台面区域,形成比上述晶体基板更高的电阻率的晶体层,以便填充上述台面蚀刻的凹部,使得条状 台面区域被埋在较高电阻率区域中,使得台面区域的顶面和较高电阻率区域彼此齐平,然后在上述冲洗表面上形成包括发光区域的半导体晶体的几个外延生长区域,例如 ,用于激光的有源区,随后形成具有对应于所述台面区域和之上的条纹几何形状的开口的接触隔离区域。 有源区域中的电流限制在窄条纹区域中。