摘要:
Defect management logic extends a useful life of a memory system. For example, as discussed herein, failure detection logic detects occurrence of a failure in a memory system. Defect management logic determines a type of the failure such as whether the failure is an infant mortality type failure or a late-life type of failure. Depending on the type of failure, the defect management logic performs different operations to extend the useful life of the memory system. For example, for early life failures, the defect management logic can retire a portion of the block including the failure. For late life failures, due to excessive reads/writes, the defect management logic can convert the failing block from operating in a first bit-per-cell storage density mode to operating in a second bit-per-cell storage density mode.
摘要:
A memory device may include two or more memory cells in an integrated circuit, at least one flash cell acting as a select gate coupled to the two or more memory cells, and an interface to accept a select gate erase command and a select gate program command during normal operation of the integrated circuit. The integrated circuit may be capable to perform operations to erase the at least one select gate in response to the select gate erase command, and program the at least one select gate in response to the select gate program command.
摘要:
The embodiments described herein generally relate to methods and systems for tunneling arbitrary binary data between an HTTP endpoint and an arbitrary destination. Such tunneling of data is valuable in an environment, for example, in which a browser-based client communicates in the HTTP protocol and desires to exchange data with a remote endpoint understanding non-HTTP communications. A relay server is used as a “middle man” to connect the client to the destination, and components supporting the necessary protocols for data exchange are plugged into the relay server. To achieve reliable and ordered transmission of data, the relay server groups sessions through the assignment of session identifiers and tracks the exchange of messages through the assignment of sequence and acknowledgment numbers. Further, the relay server provides for authenticating the HTTP endpoint with the destination and for handling other operations not available in the constrained environment of the Web-based client.
摘要:
The present invention discloses a resource scheduling method for multi-hop relay wireless network comprising: for each of a base station and relay stations, acquiring the minimal resource requirement of each of connections to all MSSs which are covered by said station and have direct signal transmission with said station, and then summing up the acquired resource requirement to obtain the minimal resource requirement of said station; and acquiring interference status between the relay stations, using different partition strategies to classify the relay stations into different independent sets, each of which can occupy the same resource, according to the minimal resource requirement of the base station and the relay stations as well as the interference status between the relay stations, and determining and comparing the total resource requirement under each of the partition strategies to obtain an optimized partition strategy for resource reuse scheduling. This resource scheduling method can meet the QoS requirement on each connection better and is applicable to dynamic and asymmetric multi-hop network.
摘要:
Described are an apparatus, system, and method for improving read endurance for a non-volatile memory (NVM). The method comprises: determining a read count corresponding to a block of NVM; identifying whether the block of NVM is a partially programmed block (PPB); comparing the read count with a first threshold when it is identified that the block is a PPB; and when identified otherwise, comparing the read count with a second threshold, wherein the first threshold is smaller than the second threshold. The method further comprises: identifying a block that is a PPB; determining a first word line corresponding to un-programmed page of the PPB; and sending the first word line to the NVM, wherein the NVM to apply: a first read voltage level to word lines corresponding to the un-programmed pages of the PPB, and a second read voltage level to word lines corresponding to programmed pages of the PPB.
摘要:
A hard disk drive that includes a disk with data written onto a plurality of tracks, a spindle motor that rotates the disk, and a head that is coupled to the disk. The disk drive also includes a circuit that writes data onto a first writable shingle band of tracks if the first writable shingle band is adjacent to a guard band of tracks. The first writable shingle band includes a number of tracks that is a function of a head width. The guard band of tracks is capable of becoming a writable shingle band. Changing the designation of a shingle band between guard and writable creates floating guard bands. The creation of floating guard bands allows for the writing of a single band without having to move and restore adjacent tracks until reaching a fixed guard band as required in the prior art.
摘要:
A method for standard reference cell design is herein disclosed. The method includes determining a first number of individual bits to be employed in a standard reference cell design based on the number of individual bits that are included in core memory cells that are to be measured using the standard reference cell. The method further includes determining a range of variation in the core memory cells to be measured that is due to process variation in the generation of the core memory cells. In addition, the method includes determining an additional number of individual bits to be included in the standard reference cell design based on the determined range of variation. A standard reference cell that includes a number of individual bits equal to the sum of both the first and the additional number of individual bits is generated.
摘要:
Methods are disclosed for determining tunnel oxide reliability of flash memory devices in a wafer prior to sorting and packaging without damaging or stressing the devices. The methods comprise measuring an initial threshold voltage of a test cell having the same tunnel oxide as other flash cells on the wafer, applying an erase stress to the test cell for a first time period and a program stress to the test cell for a second time period, and measuring the final threshold voltage of the test cell. The difference between the initial and final threshold voltages is then used to determine or estimate the tunnel oxide reliability of the flash memory cells on the wafer.