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    Sensing a memory cell
    51.
    发明授权
    Sensing a memory cell 有权

    公开(公告)号：US11594272B2

    公开(公告)日：2023-02-28

    申请号：US17409608

    申请日：2021-08-23

    Applicant: Micron Technology, Inc.

    Inventor： Huy T. Vo ,  Adam S. El-Mansouri ,  Suryanarayana B. Tatapudi ,  John D. Porter

    IPC: G11C11/22

    Abstract: Devices and methods for sensing a memory cell are described. The memory cell may include a ferroelectric memory cell. During a read operation, a first switching component may selectively couple a sense component with the memory cell based on a logic state stored on the memory cell to transfer a charge between the memory cell and the sense component. A second switching component, which may be coupled with the first switching component, may down convert a voltage associated with the charge to another voltage that is within an operation voltage of the sense component. The sense component may operate at a lower voltage than a voltage at which the memory cell operates to reduce power consumption in some cases.

    Temperature-based access timing for a memory device
    52.
    发明授权
    Temperature-based access timing for a memory device 有权

    公开(公告)号：US11282560B2

    公开(公告)日：2022-03-22

    申请号：US17208433

    申请日：2021-03-22

    Applicant: Micron Technology, Inc.

    Inventor： Victor Wong ,  Sihong Kim ,  Hiroshi Akamatsu ,  Daniele Vimercati ,  John D. Porter

    IPC: G11C7/04 ,  G11C11/22

    Abstract: Methods, systems, and devices for temperature-based access timing for a memory device are described. In some memory devices, accessing memory cells may be associated with different operations that are variously dependent on a temperature of the memory device. For example, some operations associated with accessing a memory cell may have a longer duration and others a shorter duration depending on the temperature of the memory device. In accordance with examples as disclosed herein, a memory device may be configured for performing some portions of an access operation according to a duration that is proportional to a temperature of the memory device, and performing other portions of the access operation according to a duration that is inversely proportional to a temperature of the memory device.

    SENSING A MEMORY CELL
    54.
    发明申请
    SENSING A MEMORY CELL 审中-公开

    公开(公告)号：US20190333562A1

    公开(公告)日：2019-10-31

    申请号：US15962938

    申请日：2018-04-25

    Applicant: Micron Technology, Inc.

    Inventor： Huy T. Vo ,  Adam S. El-Mansouri ,  Suryanarayana B. Tatapudi ,  John D. Porter

    IPC: G11C11/22

    Abstract: Devices and methods for sensing a memory cell are described. The memory cell may include a ferroelectric memory cell. During a read operation, a first switching component may selectively couple a sense component with the memory cell based on a logic state stored on the memory cell to transfer a charge between the memory cell and the sense component. A second switching component, which may be coupled with the first switching component, may down convert a voltage associated with the charge to another voltage that is within an operation voltage of the sense component. The sense component may operate at a lower voltage than a voltage at which the memory cell operates to reduce power consumption in some cases.

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