摘要:
A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing carbon atoms in at least a part thereof, the content of the carbon atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.
摘要:
An improved field effect thin film transistor characterized in that the semiconductor layer being formed from a polycrystal silicon film: said layer containing at least hydrogen atom and fluorine atom except silicon atom layer: and the concentration of said hydrogen atom or said fluorine atom being distributed in the thickness direction in the state that it being relatively thick in a layer region in the side of the substrate and relatively thin in a layer resion in the opposite side. A process for preparing the above field effect thin film transistor, characterized in that the semiconductor layer is formed by:(a) providing a gaseous active species A generated from a compound (i) containing silicon atom and halogen atom by subjecting said compound (i) to the action of an activation energy in an active species A generation chamber and a gaseous active species B generated from a compound (ii) containing at least hydrogen atom by subjecting said compound (ii) to the action of an activation energy in an active species B generation space;(b) introducing said active species A, said active species B and one or more of H.sub.2 gas and F.sub.2 gas into a film forming space having a substrate being maintained with a desired temperature; and(c) applying an excitation light energy into said film forming space to thereby cause chemical reactions among materials resulting in forming a polycrystal silicon film to be the semiconductor layer.
摘要:
There are provided an improved light receiving member for use in electrophotography and a process for the production thereof. The light receiving member comprises a substrate usable for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of an amorphous or polycrystalline material containing silicon atom as the main constituent and an element for controlling the conductivity, a photoconductive layer formed of an amorphous material containing silicon atom as the main constituent and at least one kind selected from hydrogen atom and halogen atom and a surface layer formed of a polycrystalline material containing silicon atom, carbon atom and hydrogen atom. The polycrystalline material is a polycrystalline material prepared by introducing a precursor capable of contributing to formation of the layer and an active species reactive with the precursor separately into a film deposition space and chemically reacting them.
摘要:
There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of a polycrystal material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity which functions to prevent a charge from being injected from the side of the substrate, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range from 41 to 70 atomic %. The light receiving layer may have a contact layer and/or an absorption layer of light having a long wavelength.
摘要:
There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a contact layer formed of a polycrystal material containing silicon atoms as the main constituent atoms and at least one kind selected from nitrogen atoms, oxygen atoms and carbon atoms, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range from 1.times.10.sup.-3 to 40 atomic %. The light receiving layer may have a charge injection inhibition layer or/and an absorption layer of light having a long wavelength.
摘要:
There is provided an improved light receiving member comprising a substrate for electrophotography and a light receiving layer being formed of a first layer composed of an amorphous material containing silicon atoms as the main component and an element for controlling the conductivity, a second layer having a photoconductivity composed of an amorphous material containing silicon atoms as the main component and a third layer composed of an amorphous material containing silicon atoms as the main component and carbon atoms, said third layer being a two-layer structure having a lower layer region of 0.05 to 0.2 .mu.m in thickness with a defect density of less than 8.times.10.sup.18 cm.sup.-3 (ESR signal) and an upper layer region with a defect density of more than 8.times.10.sup.18 cm.sup.-3 (ESR signal) and a volume resistivity of more than 5.times.10.sup.12 .OMEGA..cm.
摘要翻译:提供了一种改进的光接收元件,其包括用于电子照相的基底和由第一层形成的光接收层,该第一层由以硅原子为主要成分的非晶态材料和用于控制导电性的元素组成,第二层具有光电导性 由含有硅原子的无定形材料作为主要成分,第三层由含有硅原子的主成分和碳原子的非晶态材料构成,所述第三层是具有0.05〜0.2的下层区域的两层结构体 具有小于8×10 18 cm -3(ESR信号)的缺陷密度和缺陷密度大于8×1018cm-3(ESR信号)和体积电阻率大于5×10 12Ω/ cm 3的上层区域 。
摘要:
A photoconductive member comprises a support for a photoconductive member and an amorphous layer exhibiting photoconductivity and comprising an amorphous material comprising silicon atoms as a matrix and at least one member selected from the group consisting of hydrogen atoms and halogen atoms as a constituting atom, characterized in that the amorphous layer has a first layer region containing oxygen atoms and a second layer region containing an atom of Group III or an atom of Group V of the Periodic Table and existing interiorly at the support side, and the first layer region and the second layer region share in common at least a portion of said mutual region, and there is the relation:t.sub.B /(T+t.sub.B).ltoreq.0.4where t.sub.B is the thickness of the second layer region and T is a difference between the thickness of the amorphous layer and the thickness of the second layer region t.sub.B.
摘要:
A photoconductive member comprising a support and a light receiving layer provided on said support, having photoconductivity containing silicon atoms as a matrix and at least hydrogen atoms as constituent atom, said light receiving layer having a layer region with depth profile such that the content of hydrogen atoms contained therein is decreased in the direction of layer thickness toward both ends of said layer.
摘要:
A photoconductive member, comprises a support for a photoconductive member, a first amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a martix, said first amorphous layer having a first layer region containing oxygen atoms in a distribution which is continuous and ununiform in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution which is continuous and ununiform in the direction of layer thickness, and a second amorphous layer comprising an amorphous material represented by any of the following formulae:Si.sub.a C.sub.1-a (0.4
摘要:
A photoconductive member comprises a support for photoconductive member, an interface layer constituted of an amorphous material containing at least silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms and an amorphous layer exhibiting photoconductivity constituted of an amorphous material containing at least one of hydrogen atoms or halogen atoms as constituent atoms in a matrix of silicon atoms, said rectifying layer having a layer thickness t which from 30 .ANG. up to, but not reaching, 0.3.mu. and the content C(A) of the aforesaid atoms contained in the rectifying layer being 30 atomic ppm or more, or said t being 30 .ANG. or more and said C(A) being from 30 atomic ppm up to, but not reaching, 100 atomic ppm.