Photoconductive member
    51.
    发明授权
    Photoconductive member 失效
    感光元件

    公开(公告)号:US5258250A

    公开(公告)日:1993-11-02

    申请号:US900947

    申请日:1992-06-17

    摘要: A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing carbon atoms in at least a part thereof, the content of the carbon atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.

    摘要翻译: 光电导元件包括用于光电导元件的支撑体和非晶层,其由硅原子构成,作为含有氢原子和卤素原子中的至少一个的基质并具有光电导性,所述非晶层至少具有至少含有碳原子的层区域 其一部分,所述层区域中的碳原子的含量在所述层的厚度方向上分布不均匀。

    Field effect thin film transistor having a semiconductor layer formed
from a polycrystal silicon film containing hydrogen atom and halogen
atom and process for the preparation of the same
    52.
    发明授权
    Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same 失效
    具有由含有氢原子和卤原子的多晶硅膜形成的半导体层的场效应薄膜晶体管及其制备方法

    公开(公告)号:US4992839A

    公开(公告)日:1991-02-12

    申请号:US171862

    申请日:1988-03-22

    申请人: Shigeru Shirai

    发明人: Shigeru Shirai

    摘要: An improved field effect thin film transistor characterized in that the semiconductor layer being formed from a polycrystal silicon film: said layer containing at least hydrogen atom and fluorine atom except silicon atom layer: and the concentration of said hydrogen atom or said fluorine atom being distributed in the thickness direction in the state that it being relatively thick in a layer region in the side of the substrate and relatively thin in a layer resion in the opposite side. A process for preparing the above field effect thin film transistor, characterized in that the semiconductor layer is formed by:(a) providing a gaseous active species A generated from a compound (i) containing silicon atom and halogen atom by subjecting said compound (i) to the action of an activation energy in an active species A generation chamber and a gaseous active species B generated from a compound (ii) containing at least hydrogen atom by subjecting said compound (ii) to the action of an activation energy in an active species B generation space;(b) introducing said active species A, said active species B and one or more of H.sub.2 gas and F.sub.2 gas into a film forming space having a substrate being maintained with a desired temperature; and(c) applying an excitation light energy into said film forming space to thereby cause chemical reactions among materials resulting in forming a polycrystal silicon film to be the semiconductor layer.

    摘要翻译: 一种改进的场效应薄膜晶体管,其特征在于,所述半导体层由多晶硅膜形成:所述层至少包含氢原子和除了硅原子层之外的氟原子,所述氢原子或所述氟原子的浓度分布在 厚度方向在基板侧的层区域相对较厚的状态,相对侧的层层相对较薄。 一种制备上述场效应薄膜晶体管的方法,其特征在于:半导体层由以下物质形成:(a)提供由含有硅原子和卤素原子的化合物(i)产生的气态活性物质A,使所述化合物 )通过使所述化合物(ii)在活性物质中起活化能的作用,使活化物质A生成室和由至少含有氢原子的化合物(ii)产生的活性物质B中的活化能的作用 物种B代空间; (b)将所述活性物质A,所述活性物质B和一种或多种H 2气体和F 2气体引入具有保持所需温度的基底的成膜空间中; 和(c)将激发光能施加到所述成膜空间中,从而导致形成多晶硅膜的材料之间的化学反应成为半导体层。

    Light receiving member for use in electrophotography and process for the
production thereof
    53.
    发明授权
    Light receiving member for use in electrophotography and process for the production thereof 失效
    用于电子照相的光接收元件及其制造方法

    公开(公告)号:US4824749A

    公开(公告)日:1989-04-25

    申请号:US28777

    申请日:1987-03-23

    IPC分类号: G03G5/08 G03G5/082 G03G5/14

    摘要: There are provided an improved light receiving member for use in electrophotography and a process for the production thereof. The light receiving member comprises a substrate usable for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of an amorphous or polycrystalline material containing silicon atom as the main constituent and an element for controlling the conductivity, a photoconductive layer formed of an amorphous material containing silicon atom as the main constituent and at least one kind selected from hydrogen atom and halogen atom and a surface layer formed of a polycrystalline material containing silicon atom, carbon atom and hydrogen atom. The polycrystalline material is a polycrystalline material prepared by introducing a precursor capable of contributing to formation of the layer and an active species reactive with the precursor separately into a film deposition space and chemically reacting them.

    摘要翻译: 提供了用于电子照相术的改进的光接收元件及其生产方法。 光接收部件包括可用于电子照相的基板和由含有硅原子作为主要成分的非晶或多晶材料形成的电荷注入阻挡层和用于控制导电性的元件构成的光接收层,由 含有硅原子作为主要成分的非晶质材料和选自氢原子和卤素原子的至少一种以及由含有硅原子,碳原子和氢原子的多晶材料形成的表面层。 多晶材料是通过将能够有助于形成层的前体和与前体反应的活性物质引入到膜沉积空间中并使其化学反应而制备的多晶材料。

    Light receiving member for use in electrophotography
    54.
    发明授权
    Light receiving member for use in electrophotography 失效
    用于电子照相术的光接收元件

    公开(公告)号:US4792509A

    公开(公告)日:1988-12-20

    申请号:US10001

    申请日:1987-02-02

    IPC分类号: G03G5/082 G03G5/085

    摘要: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of a polycrystal material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity which functions to prevent a charge from being injected from the side of the substrate, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range from 41 to 70 atomic %. The light receiving layer may have a contact layer and/or an absorption layer of light having a long wavelength.

    摘要翻译: 提供了一种用于电子照相的改进的光接收元件,其包括用于电子照相的基片和由含有硅原子作为主要成分原子的多晶材料形成的电荷注入抑制层构成的光接收层和用于控制导电性的元件 用于防止从基板侧注入电荷的功能,由含有硅原子作为主要成分原子的非晶态材料形成的光电导层和由含有硅原子,碳原子和氢原子的无定形材料形成的表面层, 包含在表面层中的氢原子的量在41至70原子%的范围内。 光接收层可以具有接触层和/或具有长波长的光的吸收层。

    Light receiving member for use in electrophotography comprising
amorphous silicon layer and polycrystalline layer
    55.
    发明授权
    Light receiving member for use in electrophotography comprising amorphous silicon layer and polycrystalline layer 失效
    用于电子照相术的光接收元件,包括非晶硅层和多晶层

    公开(公告)号:US4780387A

    公开(公告)日:1988-10-25

    申请号:US16777

    申请日:1987-02-20

    IPC分类号: G03G5/08 G03G5/082

    CPC分类号: G03G5/08235 G03G5/08242

    摘要: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a contact layer formed of a polycrystal material containing silicon atoms as the main constituent atoms and at least one kind selected from nitrogen atoms, oxygen atoms and carbon atoms, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range from 1.times.10.sup.-3 to 40 atomic %. The light receiving layer may have a charge injection inhibition layer or/and an absorption layer of light having a long wavelength.

    摘要翻译: 提供了一种用于电子照相的改进的光接收元件,其包括用于电子照相的基底和由包含硅原子作为主要成分原子的多晶材料形成的接触层和从氮原子中选出的至少一种的光接收层, 氧原子和碳原子,由含有硅原子作为主要成分原子的无定形材料形成的光电导层和由含有硅原子,碳原子和氢原子的无定形材料形成的表面层,包含在 表面层在1×10 -3至40原子%的范围内。 光接收层可以具有电荷注入抑制层和/或具有长波长的光的吸收层。

    Light receiving member comprising amorphous silicon layers for
electrophotography
    56.
    发明授权
    Light receiving member comprising amorphous silicon layers for electrophotography 失效
    光接收元件包括用于电子照相的非晶硅层

    公开(公告)号:US4775606A

    公开(公告)日:1988-10-04

    申请号:US941429

    申请日:1986-12-15

    申请人: Shigeru Shirai

    发明人: Shigeru Shirai

    CPC分类号: G03G5/08235

    摘要: There is provided an improved light receiving member comprising a substrate for electrophotography and a light receiving layer being formed of a first layer composed of an amorphous material containing silicon atoms as the main component and an element for controlling the conductivity, a second layer having a photoconductivity composed of an amorphous material containing silicon atoms as the main component and a third layer composed of an amorphous material containing silicon atoms as the main component and carbon atoms, said third layer being a two-layer structure having a lower layer region of 0.05 to 0.2 .mu.m in thickness with a defect density of less than 8.times.10.sup.18 cm.sup.-3 (ESR signal) and an upper layer region with a defect density of more than 8.times.10.sup.18 cm.sup.-3 (ESR signal) and a volume resistivity of more than 5.times.10.sup.12 .OMEGA..cm.

    摘要翻译: 提供了一种改进的光接收元件,其包括用于电子照相的基底和由第一层形成的光接收层,该第一层由以硅原子为主要成分的非晶态材料和用于控制导电性的元素组成,第二层具有光电导性 由含有硅原子的无定形材料作为主要成分,第三层由含有硅原子的主成分和碳原子的非晶态材料构成,所述第三层是具有0.05〜0.2的下层区域的两层结构体 具有小于8×10 18 cm -3(ESR信号)的缺陷密度和缺陷密度大于8×1018cm-3(ESR信号)和体积电阻率大于5×10 12Ω/ cm 3的上层区域 。

    Photoconductive member having amorphous silicon matrix with oxygen and
impurity containing regions
    57.
    发明授权
    Photoconductive member having amorphous silicon matrix with oxygen and impurity containing regions 失效
    具有含氧和杂质含有区域的非晶硅基质的光导体

    公开(公告)号:US4636450A

    公开(公告)日:1987-01-13

    申请号:US830483

    申请日:1986-02-18

    IPC分类号: G03G5/082

    CPC分类号: G03G5/08235 G03G5/0825

    摘要: A photoconductive member comprises a support for a photoconductive member and an amorphous layer exhibiting photoconductivity and comprising an amorphous material comprising silicon atoms as a matrix and at least one member selected from the group consisting of hydrogen atoms and halogen atoms as a constituting atom, characterized in that the amorphous layer has a first layer region containing oxygen atoms and a second layer region containing an atom of Group III or an atom of Group V of the Periodic Table and existing interiorly at the support side, and the first layer region and the second layer region share in common at least a portion of said mutual region, and there is the relation:t.sub.B /(T+t.sub.B).ltoreq.0.4where t.sub.B is the thickness of the second layer region and T is a difference between the thickness of the amorphous layer and the thickness of the second layer region t.sub.B.

    摘要翻译: 感光体包括用于感光体的载体和显示光电导性的非晶层,并且包括含有硅原子作为基体的非晶材料和选自氢原子和卤原子作为构成原子的至少一个,其特征在于 非晶层具有含有氧原子的第一层区域和含有III族原子或第五族元素周期表原子的第二层区域,其内部存在于载体侧,第一层区域和第二层 区域共享所述相互区域的至少一部分,并且存在以下关系:tB /(T + tB)

    Photoconductive member of amorphous silicon
    58.
    发明授权
    Photoconductive member of amorphous silicon 失效
    非晶硅的感光体

    公开(公告)号:US4555465A

    公开(公告)日:1985-11-26

    申请号:US561991

    申请日:1983-12-16

    IPC分类号: G03G5/08 G03G5/082

    CPC分类号: G03G5/08228 G03G5/08

    摘要: A photoconductive member comprising a support and a light receiving layer provided on said support, having photoconductivity containing silicon atoms as a matrix and at least hydrogen atoms as constituent atom, said light receiving layer having a layer region with depth profile such that the content of hydrogen atoms contained therein is decreased in the direction of layer thickness toward both ends of said layer.

    摘要翻译: 一种感光体,其包含支撑体和设置在所述支撑体上的光接收层,具有含有硅原子作为基质并且至少具有氢原子作为构成原子的光电导率,所述光接收层具有深度分布的层区域,使得氢的含量 其中包含的原子在层的厚度方向上朝向所述层的两端减小。

    Photoconductive member having multiple amorphous layers
    59.
    发明授权
    Photoconductive member having multiple amorphous layers 失效
    具有多个非晶层的感光体

    公开(公告)号:US4536459A

    公开(公告)日:1985-08-20

    申请号:US474311

    申请日:1983-03-11

    摘要: A photoconductive member, comprises a support for a photoconductive member, a first amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a martix, said first amorphous layer having a first layer region containing oxygen atoms in a distribution which is continuous and ununiform in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution which is continuous and ununiform in the direction of layer thickness, and a second amorphous layer comprising an amorphous material represented by any of the following formulae:Si.sub.a C.sub.1-a (0.4

    摘要翻译: 光电导元件包括用于光电导元件的支撑体,显示光电导率的第一非晶层,其包含含有硅原子作为mart ix的非晶态材料,所述第一非晶层具有包含连续且不均匀的分布中的氧原子的第一层区域 层厚度方向和包含属于周期表第III族的原子的第二层区域作为在层厚度方向上连续且不均匀的分布中的构成原子,以及第二非晶层,其包含由 SiaC1-a(0.4

    Amorphous silicon photoconductive member with interface and rectifying
layers
    60.
    发明授权
    Amorphous silicon photoconductive member with interface and rectifying layers 失效
    具有界面和整流层的非晶硅光导体

    公开(公告)号:US4522905A

    公开(公告)日:1985-06-11

    申请号:US462895

    申请日:1983-02-01

    IPC分类号: G03G5/082 G03G5/09 G03G5/14

    CPC分类号: G03G5/08235 G03G5/0825

    摘要: A photoconductive member comprises a support for photoconductive member, an interface layer constituted of an amorphous material containing at least silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms and an amorphous layer exhibiting photoconductivity constituted of an amorphous material containing at least one of hydrogen atoms or halogen atoms as constituent atoms in a matrix of silicon atoms, said rectifying layer having a layer thickness t which from 30 .ANG. up to, but not reaching, 0.3.mu. and the content C(A) of the aforesaid atoms contained in the rectifying layer being 30 atomic ppm or more, or said t being 30 .ANG. or more and said C(A) being from 30 atomic ppm up to, but not reaching, 100 atomic ppm.

    摘要翻译: 光电导元件包括用于光电导元件的支撑体,由至少含有硅原子和氮原子作为构成原子的无定形材料构成的界面层,包括含有属于III族的原子(A)的无定形材料的整流层或基团 V作为硅原子的基质中的构成原子,以及由硅原子的基质中含有氢原子或卤素原子中的至少一个作为构成原子的非晶质构成的显示光电导性的非晶层,所述整流层具有 层间厚度t从30安培直到但未达到0.3微米,并且精整层中所含的上述原子的含量C(A)为30原子ppm以上,或者所述t为30以上,所述C (A)从30原子ppm直到但未达到100原子ppm。