摘要:
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, flatness, a presence of defects, and a thin film characteristic. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要:
An optical scanning system and method for detecting anomalies, including pattern defects and particulate contaminants, on both patterned and unpatterned surfaces, using a light beam, scanning at a grazing angle with respect to the surfaces, a plurality of detectors and an interchannel communication scheme to compare data from each detector, which facilitates characterizing anomalies. The light beam illuminates a spot on the surface which is scanned over a short scan-line. The surface is moved in a manner so that the spot is scanned over its entire area in a serpentine fashion along adjacent striped regions. The plurality of detectors include groups of collector channels disposed circumferentially around the surface, a bright field reflectivity/autoposition channel, an alignment/registration channel and an imaging channel. The collector channels in each group are symmetrically disposed, in the azimuth, on opposite sides of the center of the scan line. The position of the collector channels, as well as the polarization of the beam, facilitates distinguishing pattern defects from particulate contaminants. The bright field reflectivity/autoposition channel is positioned to receive specularly reflected light that carries information concerning local variation in reflectivity, which is used to classify detected anomalies, as well as determine variations in the height of the surface. The alignment/registration channel is positioned to detect a maximum of the light scattered from the pattern on the surface to ensure that the streets of die present on the surface are oriented so as not to be oblique with respect to the scan line. The imaging channel combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the present system.
摘要:
Misalignment error between two periodic structures such as two overlay targets placed side-by-side is measured. The two structures are illuminated by coherent radiation and the positive and negative diffraction beams of the input beam by the two structures are detected to discover the optical phase difference between the positive and negative diffraction beams. The misalignment between the two structures may then be ascertained from the phase difference.
摘要:
In an optical scanning system for detecting particles and pattern defects on a sample surface, a light beam is focused to an illuminated spot on the surface and the spot is scanned across the surface along a scan line. A detector is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot. The spot is scanned over arrays of scan line segments shorter than the dimensions of the surface. A bright field channel enables the adjustment of the height of the sample surface to correct for errors caused by height variations of the surface. Different defect maps provided by the output of the detectors can be compared to identify and classify the defects. The imaging function of the array of sensors combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the system.
摘要:
A metrology system for characterizing three-dimensional structures and methods for manufacturing and using same. The metrology system includes a measurement system that preferably comprises an energy source and energy detector and that is in communication with a processing system. Under control of the processing system, the metrology system rotates the measurement system relative to a structure while the energy source directs a beam of incident energy toward the structure. The incident energy rebounds from the structure as scattered energy, at least a portion of which propagates toward the energy detector. Due to the relative rotation, the energy detector receives scattered energy from the structure at a plurality of angles, and the measurement system produces data signals therefrom, which data signals are provided to the processing system. The processing system analyzes the data signals to determine whether the structure has any defects, such as yield limiting deviations or other processing defects.
摘要:
A high sensitivity and high throughput surface inspection system directs a focused beam of light at a grazing angle towards the surface, to be inspected. Relative motion is caused between the beam and the surface so that the beam scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anamolies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).
摘要:
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a presence of macro defects and overlay of a specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要:
A high sensitivity and high throughput surface inspection system directs a focused beam of light at a grazing angle towards the surface to be inspected. Relative motion is caused between the beam and the surface so that the beam scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anamolies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).
摘要:
A high sensitivity and high throughput surface inspection system directs a focused beam of light at a grazing angle towards the surface to be inspected. Relative motion is caused between the beam and the surface so that the beam scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anamolies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).
摘要:
An optical surface inspection system is designed to correct for misregistration errors. A reference vector of data samples is obtained by computing an average of adjacent data sample vectors. A comparison of the data samples in a current vector being processed to data samples that may be offset from such current vector along the direction of the current vector enables the detection and correction of misregistration errors. Alternatively, a target array of data samples is compared to a reference array of data samples collected from a different portion of the surface with various offsets for detection and correction of misregistration errors. The intensity of the reflection from the inspection beam may be monitored to vary the intensity of the inspection beam so as to reduce the dynamic range of background scattering.