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102 条记录 (耗时 0.033 秒)

    Tunneling magneto-resistive read head with two-piece free layer
    52.
    发明授权
    Tunneling magneto-resistive read head with two-piece free layer 有权
    隧道式磁阻读取头，具有两片自由层

    公开(公告)号：US06795280B1

    公开(公告)日：2004-09-21

    申请号：US09441901

    申请日：1999-11-17

    申请人： Dian Song ,  Nurul Amin ,  Sining Mao

    发明人： Dian Song ,  Nurul Amin ,  Sining Mao

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： A method and apparatus for a recording head using a spin-dependent tunneling (SDT) junction. The SDT junction utilizes an aluminum oxide tunnel barrier. The tunnel barrier can be formed to a thickness comparable with a typical Cu spacer layer on a spin valve. With the SDT junction, current is applied perpendicular to the plane of the film. The SDT junctions can have high magneto-resistance up to 40%. The magnetoresistive qualities of a head design incorporating the SDT junction are not directly related to head resistance, head geometry, bias current and film thickness. The method can include forming a spin tunnel barrier by fashioning a stack into a bottom electrode, defining a junction, depositing a layer of insulator, performing a photoprocess, depositing an upper electrode layer and lifting off the top electrode layer to define the electrode. The stack can include a pinned layer, a barrier layer and a free layer. The pinned layer can include NiFe. The barrier layer can include AlOx. The free layer can include Co. The junction can be defined with an ion mill and the insulator can include Al2O3. In addition, the top electrode layer can include Cu.

    摘要翻译： 一种使用自旋相关隧道（SDT）结的记录头的方法和装置。 SDT连接处使用氧化铝隧道屏障。 隧道势垒可以形成为与自旋阀上的典型Cu间隔层相当的厚度。 使用SDT结，电流垂直于膜的平面施加。 SDT结可以具有高达40％的高磁阻。 结合SDT结的头部设计的磁阻性质与磁头电阻，磁头几何形状，偏置电流和膜厚度无直接关系。 该方法可以包括通过将堆叠形成底部电极形成自旋隧道势垒，限定结，沉积绝缘体层，执行光电处理，沉积上部电极层和提起顶部电极层以限定电极。 堆叠可以包括钉扎层，阻挡层和自由层。 钉扎层可以包括NiFe。 阻挡层可以包括AlOx。 自由层可以包括公司。接合点可以用离子磨机定义，绝缘体可以包括Al2O3。 此外，顶部电极层可以包括Cu。

    Highly sensitive spin valve heads using a self-aligned demag-field balance element
    54.
    发明授权
    Highly sensitive spin valve heads using a self-aligned demag-field balance element 失效
    高灵敏度的自旋阀头采用自对准的场均衡元件

    公开(公告)号：US06256176B1

    公开(公告)日：2001-07-03

    申请号：US09355784

    申请日：1999-07-27

    申请人： Sining Mao ,  Nurul Amin ,  Edward S. Murdock

    发明人： Sining Mao ,  Nurul Amin ,  Edward S. Murdock

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3935 ,  G11B5/3938 ,  G11B2005/3996

    摘要： A magnetic read head (30) for use in a magnetic data storage and retrieval system has a first current contact (40), a second current contact (42), a magnetoresistive read sensor (34), and a demagnetization field balance element (50). Positioned between the first and second current contacts (40, 42) are both the magnetoresistive read sensor (34) and the demagnetization field balance element (50). The demagnetization field balance element (50) is both electrically isolated from and magnetically coupled to the magnetoresistive read sensor (34).

    摘要翻译： 用于磁数据存储和检索系统的磁读头（30）具有第一电流触点（40），第二电流触点（42），磁阻读取传感器（34）和去磁场平衡元件（50） ）。 位于第一和第二电流触头（40,42）之间的是磁阻读取传感器（34）和去磁场平衡元件（50）。 去磁场平衡元件（50）与磁阻读取传感器（34）电隔离并磁耦合到磁阻读取传感器（34）。

    Multi-bit memory with selectable magnetic layer
    55.
    发明授权
    Multi-bit memory with selectable magnetic layer 有权
    具有可选磁性层的多位存储器

    公开(公告)号：US08767456B2

    公开(公告)日：2014-07-01

    申请号：US13473448

    申请日：2012-05-16

    申请人： Nurul Amin ,  Johannes Van Ek

    发明人： Nurul Amin ,  Johannes Van Ek

    IPC分类号： G11C11/15

    CPC分类号： G11C11/5607 ,  G11B5/02 ,  G11B5/66 ,  G11B5/746 ,  G11C11/161 ,  G11C11/1675

    摘要： An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed.

    摘要翻译： 一种用于能够用磁性层选择的多位存储器的装置和相关方法。 本发明的各种实施方案通常涉及具有低矫顽力的第一选择层，其设置在第一和第二存储层之间，每个具有高矫顽力。 响应于第一选择层的磁饱和，允许将逻辑状态编程到第二存储层。

    Discrete track media
    56.
    发明授权
    Discrete track media 有权
    离散轨道媒体

    公开(公告)号：US08298611B2

    公开(公告)日：2012-10-30

    申请号：US12178443

    申请日：2008-07-23

    申请人： Nurul Amin ,  Sining Mao

    发明人： Nurul Amin ,  Sining Mao

    IPC分类号： G11B5/00

    CPC分类号： G11B5/84 ,  B26D3/16 ,  B82Y10/00 ,  G11B5/64 ,  G11B5/66 ,  G11B5/743 ,  G11B5/82 ,  G11B5/851 ,  G11B5/865 ,  Y10T83/04

    摘要： A method of fabricating a discrete track magnetic recording media. A base layer is provided onto which repeating and alternating magnetic layer and non-magnetic layers are deposited. The thickness of the magnetic layer corresponds to the width of the track of the recording media. A cylindrical rod can be used as the base layer, such that the alternating magnetic and non-magnetic layers spiraling or concentric layers around the rod. The resulting media layer can be cut or sliced into individual magnetic media or used to imprint other media discs with the discrete pattern of the media layer.

    摘要翻译： 一种制造离散轨道磁记录介质的方法。 提供基层，沉积重复和交替的磁性层和非磁性层。 磁性层的厚度对应于记录介质的轨道的宽度。 可以使用圆柱形棒作为基层，使得交替的磁性和非磁性层围绕杆螺旋或同心层。 所得到的介质层可以被切割或切成单独的磁性介质，或用于用介质层的离散图案印刷其它介质盘。

    MEMS shock sensors
    58.
    发明授权
    MEMS shock sensors 有权
    MEMS冲击传感器

    公开(公告)号：US07810373B2

    公开(公告)日：2010-10-12

    申请号：US11677762

    申请日：2007-02-22

    申请人： Nurul Amin ,  Song S. Xue ,  Patrick J. Ryan

    发明人： Nurul Amin ,  Song S. Xue ,  Patrick J. Ryan

    IPC分类号： G01P15/00

    CPC分类号： G01P15/0891 ,  G01P15/06 ,  H01H1/0036 ,  H01H9/168 ,  H01H35/14 ,  H01H35/146 ,  H01H2001/0042

    摘要： A shock sensor comprises a substrate and at least one flexure coupled to the substrate and configured to deflect upon an application of force to the shock sensor sufficient to deflect the flexure. Deflection of the at least one flexure produces a detectable change in an electrical property of the shock sensor. Examples of detectable changes in an electrical property of the shock sensor include an open circuit condition, a closed circuit condition, and a variation in voltage of a piezo-electric detector. In some embodiments, the change in the electrical property of the shock sensor may be remotely read by interrogation of a radio frequency identification transponder positioned on the substrate using a remote radio frequency identification transceiver. The disclosure also relates to a shock sensing system and method of shock detection.

    摘要翻译： 冲击传感器包括衬底和耦合到衬底的至少一个挠曲件，并且构造成在对冲击传感器施加足以偏转挠曲件的情况下偏转。 至少一个弯曲部的偏转产生震动传感器的电性能的可检测变化。 冲击传感器的电性能的可检测变化的示例包括开路状态，闭路状态和压电检测器的电压变化。 在一些实施例中，可以通过使用远程射频识别收发器询问位于衬底上的射频识别应答器来远程读取冲击传感器的电气特性的变化。 本公开还涉及一种冲击检测系统和冲击检测方法。