摘要:
To establish a technique that enables sorting of the elevation and azimuth angle in the direction of emitting secondary electrons and obtaining images with emphasized contrast, in order to perform the review and analysis of shallow asperities and microscopic foreign particles in a wafer inspection during the manufacture of semiconductor devices, an electromagnetic overlapping objective lens is used to achieve high resolution, an electron beam is narrowly focused using the objective lens, an electric field for accelerating secondary electrons in the vicinity of a wafer in order to suppress the dependence on secondary electron energy of the rotation of secondary electrons generated by irradiation of the electron beam, a ring-shaped detector plate is disposed between an electron source and the objective lens, and the low angle components of the elevation angle of the secondary electrons, as viewed from the place of generation, and the high angle components are separated and also the azimuth components are separated and detected.
摘要:
A defect inspection apparatus includes an illumination optical unit for obliquely illuminating an object with a slit-like shaped laser, a first detection optical unit for detecting a first image formed by light reflected from the object by the illumination of the slit-like shaped laser and reflected in a first direction substantially normal to a surface of the object, a second detection optical unit for detecting a second image formed by light reflected from the object by the illumination of the slit-like shaped laser and reflected in a second direction inclined to the normal direction to the surface of the object, an image signal processing unit which processes a signal outputted from the first detection optical unit and a signal outputted from the second detection optical unit, and an output unit which outputs information processed by the image signal processing unit.
摘要:
A defects inspecting apparatus having: a scanning stage for running into a predetermined direction while mounting an inspection target substrate thereon; an illumination optic system for irradiating an illumination light beam upon a surface of the inspection target substrate at a predetermined angle inclined thereto; a detection optic system including, an upper-directed photo-detector for receiving upper-directed reflected/scattered lights emitting upwards from the inspection target substrate, thereby converting them into an upper-directed image signal, and a side-directed photo-detector for receiving side-directed reflected/scattered lights emitting for the inspection target substrate into an inclined direction, so as to flatly intersects the illumination light beam, and thereby converting into a side-directed image signal; and a signal processing system-for detecting defects upon basis of the upper-directed image signal and the side-directed image signal.
摘要:
A method and an apparatus for reviewing defects detected by an optical particle inspection system or an optical profile inspection system in detail by an electron microscope are provided. In order to putting defects to be reviewed in the viewing field of the electron microscope and reducing the size of the apparatus, the electron microscope reviews defects detected by an optical defect inspection system. In the electron microscope, an optical microscope for reviewing detects is arranged, and when focusing of this optical microscope is carried out, the illumination position and the detection position of the optical microscope are not changed to the sample.
摘要:
Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要:
A scanning electron microscope or inspection system includes a sample stage on which a sample such as a wafer is loaded, an electro optical unit to scan an electron beam to the sample, and a charge control electrode to which voltage for controlling a charged state of the sample is applied. Further, there is provided an ultraviolet irradiation device for irradiating ultraviolet light onto the sample, a retarding electric source to apply a retarding voltage to the sample stage or the sample, and a detection unit for detecting secondary electrons or backscattering electrons generated in response to the scan of the electron beam. A monitoring unit for displaying an image of the sample or an inspection unit for inspection of the sample is provided which effects display or inspection based on signals from the detection unit.
摘要:
An apparatus for optically inspecting particles and/or defects correlates sizes of particles and/or defects to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要:
A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concavo-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要:
The present invention provides an inspection apparatus and inspection method. The inspection apparatus includes a stage mechanism for supporting an object under inspection. A spatial filter is provided in the detection optical system to inspect the object. A printer is used to print the results of the spatial filter. The spatial filter can be provided in the form of a Fourier transformed image.
摘要:
The present invention is characterized by the following: incident illumination and oblique illumination are performed on a scratch and a foreign material, which have been made on a surface of a polished or a ground insulating layer, with substantially the same luminous flux; and on the basis of a correlation such as a ratio of intensity of scattered light generated by the shallow scratch and the foreign material between the incident illumination and the oblique illumination, the shallow scratch is discriminated from the foreign material.