摘要:
A system for measuring a pattern on a sample, including: a data processing system that processes a set of two-dimensional distribution data of intensities from the sample, to calculate: a set of edge points indicative of position of edges of the pattern in a two-dimensional plane from the two-dimensional distribution data; an approximation edge indicative of the edge of the pattern; an edge fluctuation data by calculating a difference between the set of edge points and the approximation edge; and a correlation between a first portion of the edge fluctuation data and a second portion of the edge fluctuation data.
摘要:
In order to provide an electron microscope which enables the operator to position the field-of-view easily and accurately on a target fault, the electron microscope for observing a surface or inside of a semiconductor wafer or a mask for exposing a semiconductor pattern for faults and/or foreign objects, is provided comprising a function of loading measurement data of coordinates or sizes of faults or objects which were observed by another wafer or mask inspecting apparatus, moving the field of view of the electron microscope to the area where said fault or object exists, and displaying the coordinates of faults or objects which were obtained by another wafer or mask inspecting apparatus, the field-of-view of the electron microscope and its vicinity, a function of a pointing device switch which moves the field-of-view of the electron microscope to a position which is pointed to by a pointer on said display, and a function of changing the display as said field-of-view moves.
摘要:
A method for determining a depression/protrusion, especially of a line and space pattern formed on a sample, and an apparatus therefor. A charged particle beam is scanned with its direction being inclined to the original optical axis of the charged particle beam or a sample stage is inclined, broadening of a detected signal in a line scanning direction of the charged particle beam is measured, the broadening is compared with that when the charged particle beam is scanned with its direction being parallel to the original optical axis of the charged particle beam, and a depression/protrusion of the scanned portion is determined on the basis of increase/decrease of the broadening.
摘要:
A system for measuring a pattern on a sample, including: a data processing system that processes a set of two-dimensional distribution data of intensities from the sample, to calculate: a set of edge points indicative of position of edges of said pattern in a two-dimensional plane from said two-dimensional distribution data; an approximation edge indicative of the edge of the pattern; an edge roughness data by calculating a difference between the set of edge points and said approximation edge; and a correlation between a first portion of the edge roughness data and a second portion of the edge roughness data.
摘要:
The present invention provides a circuit pattern edge inspection method of finding out a failure in a fabricating process and image distortion in an observing apparatus by analyzing, by a non-destructive inspection, the shape of an edge of a line of a fine pattern in which characteristics of the material, process, and an exposure optical system in a semiconductor fabricating process appear, and performing analysis quantitatively. The method includes a step of detecting a set of edge points indicative of positions of edges of the pattern in a two-dimensional plane by a threshold method; a step of obtaining an approximation line for the set of edge points detected; and a step of obtaining an edge roughness shape and a characteristic by calculating the difference between the set of the edge points and the approximation line. A plurality of values are used as thresholds used for the threshold method.
摘要:
A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise.
摘要:
A pattern measuring method calculates an average pattern shape from a plurality of the same patterns appearing within an image captured using an electron microscope, and compares pattern information at each measuring position with average pattern information to determine roughness.
摘要:
In order to provide an electron microscope which enables the operator to position the field-of-view easily and accurately on a target fault, the electron microscope for observing a surface or inside of a semiconductor wafer or a mask for exposing a semiconductor pattern for faults and/or foreign objects, is provided comprising a function of loading measurement data of coordinates or sizes of faults or objects which were observed by another wafer or mask inspecting apparatus, moving the field of view of the electron microscope to the area where said fault or object exists, and displaying the coordinates of faults or objects which were obtained by another wafer or mask inspecting apparatus, the field-of-view of the electron microscope and its vicinity, a function of a pointing device switch which moves the field-of-view of the electron microscope to a position which is pointed to by a pointer on said display, and a function of changing the display as said field-of-view moves.
摘要:
An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning electron microscope having a function for identifying a desired position on the basis of a pattern registered beforehand, which includes a means for setting information concerning the pattern kind, the interval between a plurality of parts constituting the pattern, and the size of parts constituting the pattern and a means for forming a pattern image composed of a plurality of parts on the basis of the information obtained by the concerned means.
摘要:
An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning electron microscope having a function for identifying a desired position on the basis of a pattern registered beforehand, which includes a means for setting information concerning the pattern kind, the interval between a plurality of parts constituting the pattern, and the size of parts constituting the pattern and a means for forming a pattern image composed of a plurality of parts on the basis of the information obtained by the concerned means.