摘要:
A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by use of only one beam of electromagnetic radiation. In several such embodiments, as reflectivity is a function of wavelength of an incident beam, three sets of measurements are made using laser beams of three different wavelengths, to obtain three reflectivity change measures (one at each wavelength). Next, the three reflectivity change measures are used to solve for each of three properties of the doped region, namely junction depth, doping concentration, and profile abruptness.
摘要:
A particle sensor which employs the principle that a particle passing through an intense laser beam will scatter light to a photodetector which then generates a measurable signal is provided. The particle sensor uses prisms and a cylindrical lens to compress the laser beam to make it very thin along the axis of particle motion but very wide in the plane perpendicular to particle motion, thereby simultaneously providing high beam intensity for enhanced sensitivity and a large detection area. The optical components of the sensor are mounted on separate sections which allows the optical components to be separately aligned and changed so that the sensor may be easily adapted to various applications.
摘要:
A compact particle flux monitor is formed with an enclosure through which a laser beam is directed by a lens. An aperture in the enclosure allows free particles which are to be detected to pass through a sensing area at a limiting acceptance angle thereby providing an indication of direction of particle flow. Photodiodes mounted at the sensing area detect the particles, including relatively small particles, by means of the high intensity beam portion at the region of the focal point of the light beam. The response region along the diverging beam is relatively long so that the response as a function of particle size is above background noise level.
摘要:
A particle detector includes a laser, a beam shaping lens, and a pair of mirrors which reflect the shaped laser beam back and forth between the mirrors a selected number of times in order to create a sheet of light or light net between the mirrors. The path of the beam is terminated by a beam stop which contains a photodiode to monitor beam intensity and thereby system alignment. Light scattered by a particle falling through the sheet of light is gathered and transmitted to a photodiode. A peak detector provides a measure of the peak intensity of light scattered by such a particle to a microprocessor, which counts the number of particles falling through the light net in a selected time interval. The microprocessor also uses the peak intensity to estimate the size of the particle.