公开(公告)号：US20050122525A1

公开(公告)日：2005-06-09

申请号：US10731991

申请日：2003-12-09

申请人： Peter Borden ,  Edward Budiarto

发明人： Peter Borden ,  Edward Budiarto

IPC分类号： G01N21/31 ,  G01N21/55 ,  G01N21/95 ,  G01N21/956 ,  G01R31/265 ,  H01L21/66

CPC分类号： G01N21/95607 ,  G01N21/3151 ,  G01N21/55 ,  G01R31/2656

摘要： A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by oscillating a spot of a beam of electromagnetic radiation. In several such embodiments, as reflectivity is a function of wavelength of an incident beam, three sets of measurements are made using laser beams of three different wavelengths, to obtain three reflectivity change measures (one at each wavelength). Next, the three reflectivity change measures are used to solve for each of three properties of the doped region, namely junction depth, doping concentration, and profile abruptness.

摘要翻译： 具有不同掺杂剂浓度分布的两个区域的半导体晶片通过在两个区域中执行两个（或多个）测量并且比较来自两个区域的测量值来获得指示两个区域之间的反射率差异的反射率变化量度来评估。 如果其他区域的相应属性是已知的，则分析反射率变化测量产生一个区域的一个或多个属性。 例如，如果两个区域中的一个是掺杂的，另一个区域是未掺杂的（例如晶体管的源极/漏极和沟道区），则两个区域之间的反射率的变化可以产生一个或多个以下特性 掺杂区域：（1）掺杂浓度，（2）结或分布深度，以及（3）在该结处掺杂剂浓度分布的突然性（即斜率）。 在一些实施例中，通过振荡电磁辐射束的点来执行两个区域中刚刚描述的测量。 在几个这样的实施例中，由于反射率是入射光束的波长的函数，所以使用三种不同波长的激光束进行三组测量，以获得三个反射率变化测量（每个波长一个）。 接下来，使用三个反射率变化测量来求解掺杂区域的三个特性中的每一个，即结深度，掺杂浓度和轮廓突然性。

公开(公告)号：US20060114478A1

公开(公告)日：2006-06-01

申请号：US10998104

申请日：2004-11-26

申请人： Peter Borden ,  Edward Budiarto

发明人： Peter Borden ,  Edward Budiarto

IPC分类号： G01B11/04

CPC分类号： H01L21/26586 ,  H01L22/12 ,  H01L29/6659

摘要： Effect of tilt angle, at which ions are implanted into a semiconductor layer of a wafer, is evaluated by measuring reflectance of a region which has implanted ions in first areas that are interdigitated with a corresponding number of second areas lacking the implanted ions (or having the same specie ions in a background concentration). The second areas are protected during ion implantation either by being covered up or by being in shadows, of bars located over the semiconductor layer. Due to a shadow cast by a bar, only a portion of each opening between two adjacent bars is implanted with ions to form each first area, depending on the tilt angle. Hence, tilt angle is determined e.g. from a bar's shadow's width and the bar's thickness. The bar's shadow's width in turn is determined from the width of an opening and the width of an implanted first area.

摘要翻译： 通过测量在与缺少注入离子的相应数量的第二区域交错的第一区域中注入离子的区域的反射率来测量离子注入到晶片的半导体层中的倾斜角的影响（或具有 背景浓度相同的离子）。 第二个区域在离子注入过程中被保护，或者通过被覆盖或者通过阴影，位于半导体层上方的条状物中。 由于棒的阴影，两个相邻条之间的每个开口的仅一部分用离子注入，以形成每个第一区域，这取决于倾斜角。 因此，确定倾斜角。 从酒吧的阴影的宽度和酒吧的厚度。 条的阴影的宽度依次由开口的宽度和植入的第一区域的宽度确定。

公开(公告)号：US20050122515A1

公开(公告)日：2005-06-09

申请号：US10732436

申请日：2003-12-09

申请人： Peter Borden ,  Edward Budiarto

发明人： Peter Borden ,  Edward Budiarto

IPC分类号： G01J4/00 ,  G01N21/55 ,  G01N21/95 ,  G01R31/28 ,  G01R31/308

CPC分类号： G01N21/9501 ,  G01N21/55 ,  G01R31/2884 ,  G01R31/308

摘要： A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by use of only one beam of electromagnetic radiation. In several such embodiments, as reflectivity is a function of wavelength of an incident beam, three sets of measurements are made using laser beams of three different wavelengths, to obtain three reflectivity change measures (one at each wavelength). Next, the three reflectivity change measures are used to solve for each of three properties of the doped region, namely junction depth, doping concentration, and profile abruptness.

摘要翻译： 具有不同掺杂剂浓度分布的两个区域的半导体晶片通过在两个区域中执行两个（或多个）测量并且比较来自两个区域的测量值来获得指示两个区域之间的反射率差的反射率变化量度来评估。 如果其他区域的相应属性是已知的，则分析反射率变化测量产生一个区域的一个或多个属性。 例如，如果两个区域中的一个是掺杂的，另一个区域是未掺杂的（例如晶体管的源极/漏极和沟道区），则两个区域之间的反射率的变化可以产生一个或多个以下性质 掺杂区域：（1）掺杂浓度，（2）结或分布深度，以及（3）在该结处掺杂剂浓度分布的突然性（即斜率）。 在一些实施例中，通过仅使用一个电磁辐射束来执行两个区域中刚刚描述的测量。 在几个这样的实施例中，由于反射率是入射光束的波长的函数，所以使用三种不同波长的激光束进行三组测量，以获得三个反射率变化测量（每个波长一个）。 接下来，使用三个反射率变化测量来求解掺杂区域的三个特性中的每一个，即结深度，掺杂浓度和轮廓突然性。

公开(公告)号：US08168462B2

公开(公告)日：2012-05-01

申请号：US12479139

申请日：2009-06-05

申请人： Peter Borden ,  Michael P. Stewart ,  Li Xu ,  Hemant P. Mungekar ,  Christopher S. Olsen

发明人： Peter Borden ,  Michael P. Stewart ,  Li Xu ,  Hemant P. Mungekar ,  Christopher S. Olsen

IPC分类号： H01L21/00 ,  H01L31/0216

CPC分类号： H01L31/1868 ,  H01L31/022425 ,  H01L31/072 ,  Y02E10/50 ,  Y02P70/521

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel plasma oxidation process to form a passivation film stack on a surface of a solar cell substrate. In one embodiment, the methods include providing a substrate having a first type of doping atom on a back surface of the substrate and a second type of doping atom on a front surface of the substrate, plasma oxidizing the back surface of the substrate to form an oxidation layer thereon, and forming a silicon nitride layer on the oxidation layer.

摘要翻译： 本发明的实施例考虑使用新颖的等离子体氧化工艺形成高效太阳能电池，以在太阳能电池基板的表面上形成钝化膜堆叠。 在一个实施方案中，所述方法包括提供在衬底的背面上具有第一类型的掺杂原子的衬底和在衬底的前表面上的第二类型的掺杂原子，等离子体氧化衬底的背表面以形成 氧化层，并在氧化层上形成氮化硅层。

公开(公告)号：US20100275995A1

公开(公告)日：2010-11-04

申请号：US12456398

申请日：2009-06-15

申请人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

发明人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

IPC分类号： H01L31/028 ,  H01L21/22 ,  H01L21/60

CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes a back surface contact grid and an overlaid blanket metal reflector. A doped amorphous silicon layer is interposed between the contact grid and the blanket layer.

摘要翻译： 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括背面接触网格和覆盖的橡皮布金属反射器。 掺杂的非晶硅层介于接触网格和覆盖层之间。

公开(公告)号：US20100210060A1

公开(公告)日：2010-08-19

申请号：US12371090

申请日：2009-02-13

申请人： Peter Borden ,  Li Xu

发明人： Peter Borden ,  Li Xu

IPC分类号： H01L31/18

CPC分类号： H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

摘要： Embodiments of the invention generally contemplate methods for treating a semiconductor solar cell substrate to reduce the number of undesirable material defects or interface state traps on the surface or within the substrate. These defects can adversely affect the efficiency of the solar cell because electron-hole pairs tend to recombine with the defects and are essentially lost without generating any useful electrical current. In one aspect, a method of forming a solar cell on a semiconductor substrate is provided, comprising doping a front surface of the substrate, applying a passivating layer to the front surface and/or a back surface of the substrate, and annealing the substrate to reduce the interface state trap density (Dit).

摘要翻译： 本发明的实施方案通常考虑用于处理半导体太阳能电池基板以减少在表面上或在基板内的不期望的材料缺陷或界面状态陷阱的数量的方法。 这些缺陷可能不利地影响太阳能电池的效率，因为电子 - 空穴对倾向于与缺陷重新组合并且基本上损失而不产生任何有用的电流。 一方面，提供一种在半导体基板上形成太阳能电池的方法，包括：对所述基板的前表面进行掺杂，向所述基板的前表面和/或后表面施加钝化层，并将所述基板退火至 降低界面态陷阱密度（Dit）。

公开(公告)号：US20070240759A1

公开(公告)日：2007-10-18

申请号：US11403560

申请日：2006-04-13

申请人： Peter Borden

发明人： Peter Borden

IPC分类号： H01L31/00

CPC分类号： H01L31/18 ,  H01L31/02167 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/047 ,  Y02E10/541

摘要： In a thin-film photovoltaic (TF PV) module, stacked cells provide efficient conversion of solar energy without being afflicted by conventional problems such as current matching between layers. According to one aspect, the module includes separate terminals for the respective layers in the stack, thus allowing the current in each layer to be different without sacrificing efficiencies gained due to their different bandgaps. According to another aspect of the invention, a processing method according to the invention includes forming interconnects for each layer using etch and deposition processing, including forming separate interconnects for each respective layer, which interconnects can be coupled to respective sets of terminals.

摘要翻译： 在薄膜光伏（TF PV）模块中，堆叠的电池提供太阳能的有效转换，而不受诸如层之间的电流匹配的常规问题的折磨。 根据一个方面，该模块包括用于堆叠中的相应层的单独的端子，从而允许每层中的电流不同，而不会牺牲由于其不同带隙而获得的效率。 根据本发明的另一方面，根据本发明的处理方法包括使用蚀刻和沉积处理为每个层形成互连，包括为每个相应层形成单独的互连，所述互连可以耦合到相应的终端集合。

公开(公告)号：US20050214956A1

公开(公告)日：2005-09-29

申请号：US10813407

申请日：2004-03-29

申请人： Jiping Li ,  Peter Borden ,  Edgar Genio

发明人： Jiping Li ,  Peter Borden ,  Edgar Genio

IPC分类号： G01N25/18 ,  G01N25/72 ,  H01L23/544 ,  H01L21/66

CPC分类号： G01N25/18 ,  G01N25/72

摘要： Heat is applied to a conductive structure that includes one or more vias, and the temperature at or near the point of heat application is measured. The measured temperature indicates the integrity or the defectiveness of various features (e.g. vias and/or traces) in the conductive structure, near the point of heat application. Specifically, a higher temperature measurement (as compared to a measurement in a reference structure) indicates a reduced heat transfer from the point of heat application, and therefore indicates a defect. The reference structure can be in the same die as the conductive structure (e.g. to provide a baseline) or outside the die but in the same wafer (e.g. in a test structure) or outside the wafer (e.g. in a reference wafer), depending on the embodiment.

摘要翻译： 将热施加到包括一个或多个通孔的导电结构，并且测量在加热点处或附近的温度。 测量的温度表示导热结构中靠近加热点的各种特征（例如通路和/或迹线）的完整性或缺陷。 具体而言，较高的温度测量（与参考结构中的测量值相比）表示从热施加点减少的热传递，因此表示缺陷。 参考结构可以与导电结构（例如，提供基线）或模具外部在相同的晶片（例如，在测试结构中）或晶片外部（例如，在参考晶片中）处于相同的裸片中，这取决于 该实施例。

公开(公告)号：US20050186776A1

公开(公告)日：2005-08-25

申请号：US11114300

申请日：2005-04-25

申请人： Peter Borden ,  Ji-Ping Li

发明人： Peter Borden ,  Ji-Ping Li

IPC分类号： G01N21/00 ,  G01D20060101 ,  G01N21/17 ,  G01N21/21 ,  G01N21/84 ,  G01N21/88 ,  G01N21/95 ,  G01R31/26 ,  G01R31/265 ,  H01L21/265 ,  H01L21/4763 ,  H01L21/66

CPC分类号： G01N21/1717 ,  G01N21/171 ,  G01N21/21 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/9501 ,  G01N21/9505 ,  G01N21/95607 ,  G01N21/95692 ,  G01N2021/1748 ,  G01N2021/216 ,  G01R31/2648 ,  G01R31/2656 ,  H01L22/12

摘要： A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. One of the two measurements is of resistance per unit length. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.

摘要翻译： 一种方法和装置测量两层镶嵌结构（例如在制造期间的硅晶片）的性质，并且使用两个测量来将位置识别为具有空隙。 两个测量中的一个是每单位长度的电阻。 这两个测量可以以任何方式使用，例如， 相比之下，当两个测量彼此偏离时，视为存在空白。 响应于空隙的检测，可以改变在镶嵌结构的制造中使用的工艺参数，以减少或消除要形成的结构中的空隙。

公开(公告)号：US5637881A

公开(公告)日：1997-06-10

申请号：US421572

申请日：1995-04-11

申请人： Raymond Burghard ,  Derek Aqui ,  Peter Borden

发明人： Raymond Burghard ,  Derek Aqui ,  Peter Borden

IPC分类号： G01N15/02 ,  G01N21/21 ,  G01N15/06

CPC分类号： G01N15/0205 ,  G01N21/21

摘要： A structure and a method provide a quasi bright field particle sensor for the detection of non-spherical particles, using a laser beam of predetermined polarization. A phase shift caused by non-spherical particles passing through the laser beam is utilized to detect the presence of such particles. In one embodiment, a single laser beam is used to detect the concentration of non-spherical particles in the pump line receiving the exhaust gas from a process chamber.

摘要翻译： 结构和方法使用预定极化的激光束提供用于检测非球形颗粒的准亮场粒子传感器。 利用通过激光束的非球形颗粒引起的相移来检测这种颗粒的存在。 在一个实施例中，单个激光束用于检测在接收来自处理室的废气的泵管线中的非球形颗粒的浓度。