摘要:
The invention relates to a method for regulating a cooling device fitted in or to a switchgear cabinet, by means of a regulating device, wherein the temperature of the switchgear cabinet interior air is detected and an interior fan assigned thereto for generating an interior air flow through an evaporator and providing cooling air is switched on if the detected temperature of the switchgear cabinet interior air exceeds an upper setpoint temperature, and is switched off if the detected temperature falls below a lower setpoint temperature, and the invention relates to an apparatus for carrying out the method. A reduced energy consumption and an increased service life with reliable operation are achieved by virtue of the fact that after the interior fan has been switched off owing to the lower setpoint temperature being undershot, a timekeeping is started and the interior fan is switched on after a predetermined first time duration for a predetermined second time duration and is then switched off again if the detected temperature still falls below the upper setpoint temperature, as long as the second time duration proceeds, that the intermittent time-controlled mode of operation of the interior fan is cyclically repeated until the upper setpoint temperature is exceeded, after which the interior fan is operated in continuous operation, and that the timekeeping and the intermittent time-controlled mode of operation of the interior fan are started anew if the lower setpoint temperature is undershot.
摘要:
The invention relates to a method for regulating a cooling device fitted in or to a switchgear cabinet, by means of a regulating device, wherein the temperature of the switchgear cabinet interior air is detected and an interior fan assigned thereto for generating an interior air flow through an evaporator and providing cooling air is switched on if the detected temperature of the switchgear cabinet interior air exceeds an upper setpoint temperature, and is switched off if the detected temperature falls below a lower setpoint temperature, and the invention relates to an apparatus for carrying out the method. A reduced energy consumption and an increased service life with reliable operation are achieved by virtue of the fact that after the interior fan has been switched off owing to the lower setpoint temperature being undershot, a timekeeping is started and the interior fan is switched on after a predetermined first time duration for a predetermined second time duration and is then switched off again if the detected temperature still falls below the upper setpoint temperature, as long as the second time duration proceeds, that the intermittent time-controlled mode of operation of the interior fan is cyclically repeated until the upper setpoint temperature is exceeded, after which the interior fan is operated in continuous operation, and that the timekeeping and the intermittent time-controlled mode of operation of the interior fan are started anew if the lower setpoint temperature is undershot.
摘要:
The invention relates to a climate control device having a cooling air outlet (10a) for cooled air (12a), and a heated air outlet (10b) for heated air (12b), wherein the air to be cooled (14a) is cooled by means of the cold side (16a) of a Peltier element arrangement (18) and is blown out by means of a cooling air feed device (20a) via the cooled air outlet (10a), and wherein the air to be heated (14b) is heated by means of the warm side (16b) of the Peltier element arrangement (18) and is blown out by means of a heated air feed device (20b) via the heated air outlet (10b). Each of the warm side (16b) and/or the cold side (16a) of the Peltier element arrangement (18) is coupled to a coolant circuit (22a; 22b), to which an air/fluid heat exchanger arrangement (28a; 28b) is connected. The device is used, for example, for cooling or ventilating a housing, particularly of a control cabinet.
摘要:
A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.
摘要:
In a method for initializing at least one electronic circuit unit of an electric circuit, a supply voltage is applied to a power supply connection unit of the electronic circuit in order to supply electrical power to the electronic circuit unit. A reference signal is applied to the electronic circuit unit via a reference signal connection unit. A blocking unit connected to the reference signal connection unit blocks the electronic circuit unit until the reference signal is supplied. An input signal to the electronic circuit unit is supplied via an input signal connection unit of the electronic circuit and an output signal is output by an output signal connection unit of the electronic circuit. The output signal is dependent on the input signal and the reference signal supplied to the electronic circuit unit.
摘要:
A semiconductor memory device with redundant memory cells and a method for operating a semiconductor memory device is disclosed. One embodiment provides at least one memory cell and at least one redundant memory cell. The method includes reading out data written in the memory cell; determining whether the read-out data concur with target data; reprogramming or reconfiguring, respectively, the semiconductor device, so that the redundant memory cell replaces the memory cell if the read-out data do not concur with the target data; and writing the target data in the redundant memory cell already during the reprogramming or reconfiguring, respectively.
摘要:
An interface between a test access port of an integrated circuit chip and a test equipment, which is designed to perform a functional test of the chip, is provided. The interface includes electric pads on either sides of the chip and the test equipment. The pads are arranged to interact by means of capacitive coupling, when a test data signal is input to one of the pads. Preferably, both pads are connected with either a receiver or a driver depending on the direction of the data flow. The electric pads relating to the chip's side may be arranged within the wiring substrate of a chip package, particularly along edge portion of the substrate, which encompasses an inner portion of the substrate, in which a ball-grid-array can be formed.
摘要:
A system and method for testing a memory device is disclosed. One embodiment includes a plurality of memory cells. Each of the memory cells can be controlled by an address. A test memory for storing test results is provided. An address comparing unit is configured to determine whether the address of a memory cell lies in a predetermined address space. A controllable unit for storing test results is connected with the test memory and the address comparing unit. The controllable unit is controlled by the address comparing unit such that error information of the tested memory cell is only stored in the test memory if the address of the tested memory cell lies in the selected address space.
摘要:
A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.